Improvement of Etching Anisotropy in Fused Silica by Double-Pulse Fabrication

Investigating focus elongation using a spatial light modulator for high-throughput ultrafast-laser-induced selective etching in fused silica

Ultrafast-laser-induced selective chemical etching is an enabling microfabrication technology compatible with optical materials such as fused silica. The technique offers unparalleled three-dimensional manufacturing freedom and feature resolution but can be limited by long laser inscription times and widely varying etching selectivity depending on the laser irradiation parameters used. In this paper, we aim to overcome these limitations by employing beam shaping via a spatial light modulator to generate a vortex laser focus with controllable depth-of-focus (DOF), from diffraction limited to several hundreds of microns. We present the results of a thorough parameter-space investigation of laser irradiation parameters, documenting the observed influence on etching selectivity and focus elongation in the polarization-insensitive writing regime, and show that etching selectivity greater than 800 is maintained irrespective of the DOF. To demonstrate high-throughput laser writing with an elongated DOF, geometric shapes are fabricated with a 12-fold reduction in writing time compared to writing with a phase-unmodulated Gaussian focus.

Chemical etching of fused silica after modification with two-pulse bursts of femtosecond laser

Bursts of femtosecond laser pulses were used to record internal modifications inside fused silica for selective chemical etching. Two-pulse bursts with a variable energy ratio between those pulses at a fixed inter-pulse duration of 14.5 ns were applied for the first time. The selective chemical etching rate of the laser-modified material with the burst of two pulses was compared to the single-pulse regime when etching in HF and KOH etchants. The advantage of the burst-mode processing was demonstrated when etching was performed in the KOH solution. More regular nanogratings were formed, and the etching initiation was more stable when burst pulses were applied for fused silica modification. The vertical planar structures were obtained using the two-pulse bursts with an energy ratio of 1:2, increasing the etching rate by more than 35% compared to the single-pulse processing. The highest ever reported selectivity of 1:2000 was demonstrated by introducing the two-pulse burst mode.