Curved Structure of Si by Improving Etching Direction Controllability in Magnetically Guided Metal-Assisted Chemical Etching

Metal-assisted chemical etching beyond Si: applications to III-V compounds and wide-bandgap semiconductors

Metal-assisted chemical etching (MacEtch) has emerged as a versatile technique for fabricating a variety of semiconductor nanostructures. Since early investigations in 2000, research in this field has provided a deeper understanding of the underlying mechanisms of catalytic etching processes and enabled high control over etching conditions for diverse applications. In this Review, we present an overview of recent developments in the application of MacEtch to nanomanufacturing and processing of III-V based semiconductor materials and other materials beyond Si. We highlight the key findings and developments in MacEtch as applied to GaAs, GaN, InP, GaP, InGaAs, AlGaAs, InGaN, InGaP, SiC, β-Ga2O3, and Ge material systems. We further review a series of active and passive devices enabled by MacEtch, including light-emitting diodes (LEDs), field-effect transistors (FETs), optical gratings, sensors, capacitors, photodiodes, and solar cells. By reviewing demonstrated control of morphology, optimization of etch conditions, and catalyst-material combinations, we aim to distill the current understanding of beyond-Si MacEtch mechanisms and to provide a bank of reference recipes to stimulate progress in the field.

Voltage- and Metal-assisted Chemical Etching of Micro and Nano Structures in Silicon: A Comprehensive Review

Sculpting silicon at the micro and nano scales has been game-changing to mold bulk silicon properties and expand, in turn, applications of silicon beyond electronics, namely, in photonics, sensing, medicine, and mechanics, to cite a few. Voltage- and metal-assisted chemical etching (ECE and MaCE, respectively) of silicon in acidic electrolytes have emerged over other micro and nanostructuring technologies thanks to their unique etching features. ECE and MaCE have enabled the fabrication of novel structures and devices not achievable otherwise, complementing those feasible with the deep reactive ion etching (DRIE) technology, the gold standard in silicon machining. Here, a comprehensive review of ECE and MaCE for silicon micro and nano machining is provided. The chemistry and physics ruling the dissolution of silicon are dissected and similarities and differences between ECE and MaCE are discussed showing that they are the two sides of the same coin. The processes governing the anisotropic etching of designed silicon micro and nanostructures are analyzed, and the modulation of etching profile over depth is discussed. The preparation of micro- and nanostructures with tailored optical, mechanical, and thermo(electrical) properties is then addressed, and their applications in photonics, (bio)sensing, (nano)medicine, and micromechanical systems are surveyed. Eventually, ECE and MaCE are benchmarked against DRIE, and future perspectives are highlighted.

Analysis of highly efficient quad-crescent-shaped Si nanowires solar cell

Nanostructured semiconductor nanowires (NWs) present a smart solution for broadband absorption solar cells (SCs) with high efficiency and low-cost. In this paper, a novel design of quad crescent-shaped silicon NW SC is introduced and numerically studied. The suggested NW has quad crescent shapes which create a cavity between any adjacent NWs. Such a cavity will permit multiple light scattering with improved absorption. Additionally, new modes will be excited along the NWs, which are highly coupled with the incident light. Further, the surface reflection from the crescent NWs is decreased due to the reduced surface filling ratio. The finite difference time domain method is utilized to analyze the optical characteristics of the reported structure. The proposed NW offers short circuit current density (Jsc) of 27.8 mA/cm² and ultimate efficiency (η_ul) of 34% with an enhancement of 14% and volume reduction of 40% compared to the conventional NWs. The J_sc and η_ul are improved to 35.8 mA/cm² and 43.7% by adding a Si substrate and back reflector to the suggested crescent NWs.

Editorial for the Special Issue on Micro- and Nano-Fabrication by Metal Assisted Chemical Etching

Discovered by Li and Bohn in 2000 [1], Metal Assisted Chemical Etching has been finally recognized as an emerging etching technology.[...].