Design and Fabrication of Bulk Micromachined 4H-SiC Piezoresistive Pressure Chips Based on Femtosecond Laser Technology

Multifunctional Laser-Induced Graphene-Based Microfluidic Chip for High-Performance Oocyte Cryopreservation with Low Concentration of Cryoprotectants

Oocyte cryopreservation is essential in the field of assisted reproduction, but due to the large size and poor environmental tolerance of oocytes, cell freezing technology needs further improvement. Here, a Y-shaped microfluidic chip based on 3D graphene is ingeniously devised by combining laser-induced graphene (LIG) technology and fiber etching technology. The prepared LIG/PDMS microfluidic chip can effectively suppress ice crystal size and delay ice crystal freezing time by adjusting surface hydrophobicity. In addition, LIG endows the microfluidic chip with an outstanding photothermal effect, which allows to sharply increase its surface temperature from 25 to 71.8 °C with 10 s of low-power 808 nm laser irradiation (0.4 W cm-2). Notably, the LIG/PDMS microfluidic chip not only replaces the traditional cryopreservation carriers, but also effectively reduces the dosage of cryoprotectants (CPAs) needed in mouse oocyte cryopreservation. Even when the concentration of CPAs is cut in half (final concentration of 7.5% ethylene glycol (EG) and 7.5% dimethyl sulfoxide (DMSO)), the survival rate of oocytes is still as high as 92.4%, significantly higher than the control group's 85.8%. Therefore, this work provides a novel design strategy to construct multifunctional microfluidic chips for high-performance oocytes cryopreservation.

Emerging SiC Applications beyond Power Electronic Devices

In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems to be solved and the outlooks for these new devices. The use of SiC for high temperature applications in space, high temperature CMOS, high radiation hard detectors, new optical devices, high frequency MEMS, new devices with integrated 2D materials and biosensors have been extensively reviewed in this paper. The development of these new applications, at least for the 4H-SiC ones, has been favored by the strong improvement in SiC technology and in the material quality and price, due to the increasing market for power devices. However, at the same time, these new applications need the development of new processes and the improvement of material properties (high temperature packages, channel mobility and threshold voltage instability improvement, thick epitaxial layers, low defects, long carrier lifetime, low epitaxial doping). Instead, in the case of 3C-SiC applications, several new projects have developed material processes to obtain more performing MEMS, photonics and biomedical devices. Despite the good performance of these devices and the potential market, the further development of the material and of the specific processes and the lack of several SiC foundries for these applications are limiting further development in these fields.

Design and Fabrication of a High-Temperature SOI Pressure Sensor with Optimized Crossbeam Membrane

This paper presents a SOI piezoresistive pressure sensor with the crossbeam membrane. The roots of the crossbeam were widened, which solved the problem of the poor dynamic performance of small-range pressure sensors working at a high temperature of 200 °C. A theoretical model was established to optimize the proposed structure, which combined the finite element and the curve fitting. Using the theoretical model, the structural dimensions were optimized to obtain the optimal sensitivity. During optimization, the sensor nonlinearity was also taken into consideration. The sensor chip was fabricated by MEMS bulk-micromachining technology, and Ti/Pt/Au metal leads were prepared to improve the sensor ability of high-temperature resistance over a long time. The sensor chip was packaged and tested, and the experimental results show the sensor achieved an accuracy of 0.241% FS, nonlinearity of 0.180% FS, hysteresis of 0.086% FS and repeatability of 0.137% FS at the high temperature. Given the good reliability and performance at the high temperature, the proposed sensor provides a suitable alternative for the measurement of pressure at high temperatures.

An SOI-Structured Piezoresistive Differential Pressure Sensor with High Performance

This paper presents a piezoresistive differential pressure sensor based on a silicon-on-insulator (SOI) structure for low pressure detection from 0 to 30 kPa. In the design phase, the stress distribution on the sensing membrane surface is simulated, and the doping concentration and geometry of the piezoresistor are evaluated. By optimizing the process, the realization of the pressure sensing diaphragm with a controllable thickness is achieved, and good ohmic contact is ensured. To obtain higher sensitivity and high temperature stability, an SOI structure with a 1.5 µm ultra-thin monocrystalline silicon layer is used in device manufacturing. The device diaphragm size is 700 µm × 700 µm × 2.1 µm. The experimental results show that the fabricated piezoresistive pressure sensor has a high sensitivity of 2.255 mV/V/kPa and a sensing resolution of less than 100 Pa at room temperature. The sensor has a temperature coefficient of sensitivity (TCS) of -0.221 %FS/°C and a temperature coefficient of offset (TCO) of -0.209 %FS/°C at operating temperatures ranging from 20 °C to 160 °C. The reported piezoresistive microelectromechanical systems (MEMS) pressure sensors are fabricated on 8-inch wafers using standard CMOS-compatible processes, which provides a volume solution for embedded integrated precision detection applications of air pressure, offering better insights for high-temperature and miniaturized low-pressure sensor research.

Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser

Femtosecond laser ablation has become one of the important structural processing methods for the third-generation semiconductor material, silicon carbide (SiC), and it is gradually being employed in the manufacture of microelectromechanical systems and microelectronic devices. Experimental study has been performed on infrared single and multiple pulses (1035 nm) femtosecond laser ablation of SiC at various processing parameters. Diameters of laser ablation spots on 4H-SiC were measured to estimate the absorption threshold for material modification and structural transformation, which were 2.35 J/cm² and 4.97 J/cm², respectively. In the multiple-pulse scribing ablation for microgrooves, the ablation threshold dropped to 0.70 J/cm² due to the accumulation effect when the effective pulse number reached 720. The calculated average of the thermally stimulated ablation depth of 4H-SiC is 22.4 nm, which gradually decreased with the raising of the effective pulse number. For obtaining square trenches with precise and controllable depths and a smooth bottom in 4H-SiC, the effects of processing parameters on the material removal rate and surface roughness are discussed. The ablation rate per pulse is almost constant, even if the effective pulse number varies. The reduction of laser spot overlapping ratio in x direction has a greater weakening effect on the material removal rate than that in y direction. The precise amount of material removal can still be controlled, while modulating the surface roughness of the ablated features by changing the hatch rotation angle. This research will help to achieve controllable, accurate, and high-quality machining results in SiC ablation, using infrared femtosecond laser.