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Awad M, Workie TB, Bao J, Hashimoto KY. Nonconventional Tether Structure for Quality Factor Enhancement of Thin-Film-Piezoelectric-on-Si MEMS Resonator. MICROMACHINES 2023; 14:1965. [PMID: 37893402 PMCID: PMC10608936 DOI: 10.3390/mi14101965] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2023] [Revised: 10/16/2023] [Accepted: 10/20/2023] [Indexed: 10/29/2023]
Abstract
This article presents a new design of supporting tethers through the concept of force distribution. The transmitted force applied on tethers will be distributed on the new tether design area, resulting in low acoustic energy transferred to anchor boundaries and stored energy enhancement. This technique achieves an anchor quality factor of 175,000 compared to 58,000 obtained from the conventional tether design, representing a three-fold enhancement. Furthermore, the unloaded quality factor of the proposed design improved from 23,750 to 27,442, representing a 1.2-fold improvement.
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Affiliation(s)
- Mohammed Awad
- School of Integrated Circuits Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China; (T.B.W.); (K.-y.H.)
| | | | - Jingfu Bao
- School of Integrated Circuits Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China; (T.B.W.); (K.-y.H.)
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Zhao X, Kaya O, Pirro M, Simeoni P, Segovia-Fernandez J, Cassella C. Extending the Linearity of AlScN Contour-Mode Resonators Through Acoustic Metamaterials-Based Reflectors. IEEE TRANSACTIONS ON ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL 2023; 70:1229-1238. [PMID: 37027530 DOI: 10.1109/tuffc.2023.3245809] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
This work describes the implementation of acoustic metamaterials (AMs) made of a forest of rods at the sides of a suspended aluminum scandium nitride (AlScN) contour-mode resonator (CMR) to increase its power handling without causing degradations of its electromechanical performance. The increase in usable anchoring perimeter with respect to conventional CMR designs, enabled by the adoption of two AM-based lateral anchors, permits to achieve improved heat conduction from the resonator's active region to the substrate. Furthermore, thanks to such AM-based lateral anchors' unique acoustic dispersion features, the attained increase of anchored perimeter does not cause any degradations of the CMR's electromechanical performance, even leading to a ~15% improvement in the measured quality factor. Finally, we experimentally show that using our AM-based lateral anchors leads to a more linear CMR's electrical response, which is enabled by a 32% reduction of its Duffing nonlinear coefficient with respect to the corresponding value attained by a conventional CMR design that uses fully etched lateral sides.
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He W, Li L, Tong Z, Liu H, Yang Q, Gao T. H-Shaped Radial Phononic Crystal for High-Quality Factor on Lamb Wave Resonators. SENSORS (BASEL, SWITZERLAND) 2023; 23:2357. [PMID: 36850953 PMCID: PMC9958585 DOI: 10.3390/s23042357] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/23/2023] [Revised: 02/12/2023] [Accepted: 02/17/2023] [Indexed: 06/18/2023]
Abstract
In this paper, a novel H-shaped radial phononic crystal (H-RPC) structure is proposed to suppress the anchor loss of a Lamb wave resonator (LWR), which has an ultra-high frequency (UHF) and ultra-wideband gap characteristics. Compared to previous studies on phononic crystal (PC) structures aimed at suppressing anchor loss, the radial phononic crystal (RPC) structure is more suitable for suppressing the anchor loss of the LWR. By using the finite element method, through the research and analysis of the complex energy band and frequency response, it is found that the elastic wave can generate an ultra-wideband gap with a relative bandwidth of up to 80.2% in the UHF range when propagating in the H-RPC structure. Furthermore, the influence of geometric parameters on the ultra-wideband gap is analyzed. Then, the H-RPC structure is introduced into the LWR. Through the analysis of the resonant frequency, it is found that the LWR formed by the H-RPC structure can effectively reduce the vibration energy radiated by the anchor point. The anchor quality factor was increased by 505,560.4% compared with the conventional LWR. In addition, the analysis of the LWR under load shows that the LWR with the H-RPC structure can increase the load quality factor by 249.9% and reduce the insertion loss by 93.1%, while the electromechanical coupling coefficient is less affected.
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Affiliation(s)
- Weitao He
- School of Mechanical and Electrical Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, China
| | - Lixia Li
- School of Mechanical and Electrical Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, China
- Institute of Mechanics, Xi’an University of Architecture and Technology, Xi’an 710055, China
| | - Zhixue Tong
- School of Mechanical and Electrical Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, China
| | - Haixia Liu
- School of Mechanical and Electrical Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, China
| | - Qian Yang
- School of Mechanical and Electrical Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, China
| | - Tianhang Gao
- School of Mechanical and Electrical Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, China
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Li L, He W, Tong Z, Liu H, Xie M. Q-Factor Enhancement of Coupling Bragg and Local Resonance Band Gaps in Single-Phase Phononic Crystals for TPOS MEMS Resonator. MICROMACHINES 2022; 13:mi13081217. [PMID: 36014140 PMCID: PMC9415325 DOI: 10.3390/mi13081217] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/06/2022] [Revised: 07/25/2022] [Accepted: 07/27/2022] [Indexed: 01/27/2023]
Abstract
This paper presents a type of single-phase double “I” hole phononic crystal (DIH-PnC) structure, which is formed by vertically intersecting double “I” holes. By using the finite element method, the complex energy band curve, special point mode shapes, and different delay lines were calculated. Numerical results showed that DIH-PnC yielded ultra-wide band gaps with strong attenuation. The formation mechanism is attributed to the Bragg-coupled local resonance mechanism. The effects of the pore width in DIH-PnC on the band gaps were further explored numerically. Significantly, as the pore width variable, the position of the local resonance natural frequency could be modulated, and this enabled the coupling between the local resonance and the Bragg mechanism. Subsequently, we introduced this DIH-PnC into the thin-film piezoelectric-on-silicon (TPOS) resonator. The results illustrated that the anchor loss quality factor (Qanc) of the DIH-PnC resonator was 20,425.1% higher than that of the conventional resonator and 3762.3% higher than the Qanc of the cross-like holey PnC resonator. In addition, the effect of periodic array numbers on Qanc was researched. When the Qanc reached 1.12 × 106, the number of the period array in DIH-PnC only needed to be 1/6 compared with cross-like holey PnC. Adopting the PnC based on the coupling Bragg and local resonance band gaps had a good effect on improving the Qanc of the resonator.
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Affiliation(s)
- Lixia Li
- School of Mechanical and Electrical Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, China; (L.L.); (W.H.); (H.L.); (M.X.)
- Institute of Mechanics, Xi’an University of Architecture and Technology, Xi’an 710055, China
| | - Weitao He
- School of Mechanical and Electrical Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, China; (L.L.); (W.H.); (H.L.); (M.X.)
| | - Zhixue Tong
- School of Mechanical and Electrical Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, China; (L.L.); (W.H.); (H.L.); (M.X.)
- Correspondence:
| | - Haixia Liu
- School of Mechanical and Electrical Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, China; (L.L.); (W.H.); (H.L.); (M.X.)
| | - Miaoxia Xie
- School of Mechanical and Electrical Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, China; (L.L.); (W.H.); (H.L.); (M.X.)
- Institute of Mechanics, Xi’an University of Architecture and Technology, Xi’an 710055, China
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Shi L, Xuan W, Zhang B, Dong S, Jin H, Luo J. Numerical Investigation of Phononic Crystal Based Film Bulk Acoustic Wave Resonators. NANOMATERIALS 2021; 11:nano11102547. [PMID: 34684988 PMCID: PMC8539591 DOI: 10.3390/nano11102547] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/13/2021] [Revised: 09/23/2021] [Accepted: 09/24/2021] [Indexed: 11/21/2022]
Abstract
Film bulk acoustic resonator (FBAR)-based filters have attracted great attention because they can be used to build high-performance RF filters with low cost and small device size. Generally, FBARs employ the air cavity and Bragg mirror to confine the acoustic energy within the piezoelectric layer, so as to achieve high quality factors and low insertion loss. Here, two-dimensional (2D) phononic crystals (PhCs) are proposed to be the acoustic energy reflection layer for an FBAR (PhC-FBAR). Four kinds of PhC structures are investigated, and their bandgap diagrams and acoustic wave reflection coefficients are analyzed using the finite element method (FEM). Then, the PhCs are used as the acoustic wave reflectors at the bottom of the piezoelectric stack, with high reflectivity for elastic waves in the specific frequency range. The results show that the specific PhC possesses a wide bandgap, which enables the PhC-FBAR to work at a broad frequency range. Furthermore, the impedance spectra of PhC-FBARs are very smooth with few spurious modes, and the quality factors are close to those of traditional FBARs with air cavities, showing the application potential of the PhC-FBAR filters with wide bandwidth and high power capability.
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Affiliation(s)
- Linhao Shi
- Ministry of Education Key Lab. of RF Circuits and Systems, College of Electronics & Information, Hangzhou Dianzi University, Hangzhou 310018, China; (L.S.); (B.Z.)
| | - Weipeng Xuan
- Ministry of Education Key Lab. of RF Circuits and Systems, College of Electronics & Information, Hangzhou Dianzi University, Hangzhou 310018, China; (L.S.); (B.Z.)
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 310027, China; (S.D.); (H.J.)
- Correspondence: (W.X.); (J.L.)
| | - Biao Zhang
- Ministry of Education Key Lab. of RF Circuits and Systems, College of Electronics & Information, Hangzhou Dianzi University, Hangzhou 310018, China; (L.S.); (B.Z.)
| | - Shurong Dong
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 310027, China; (S.D.); (H.J.)
- Zhejiang Provincial Key Laboratory of Advanced Microelectronic Intelligent Systems and Applications, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Hao Jin
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 310027, China; (S.D.); (H.J.)
- Zhejiang Provincial Key Laboratory of Advanced Microelectronic Intelligent Systems and Applications, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jikui Luo
- Ministry of Education Key Lab. of RF Circuits and Systems, College of Electronics & Information, Hangzhou Dianzi University, Hangzhou 310018, China; (L.S.); (B.Z.)
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 310027, China; (S.D.); (H.J.)
- Zhejiang Provincial Key Laboratory of Advanced Microelectronic Intelligent Systems and Applications, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- Correspondence: (W.X.); (J.L.)
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