Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes

Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3

The interfacial properties of a planar SnO/κ-Ga2O3 p-n heterojunction have been investigated by capacitance-voltage (C-V) measurements following a methodological approach that allows consideration of significant combined series resistance and parallel leakage effects. Single-frequency measurements were carried out in both series- and parallel-model measurement configurations and then compared to the dual-frequency approach, which permits us to evaluate the depletion capacitance of diode independently of leakage conductance and series resistance. It was found that in the bias region, where the dissipation factor was low enough, they give the same results and provide reliable experimental C-V data. The doping profile extracted from the C-V data shows a nonuniformity at the junction interface that was attributed to a depletion of subsurface net donors at the n-side of the diode. This attribution was corroborated by doping profiles and carrier distributions in the n and p sides of the heterojunction obtained from the simulation of the measured C-V data by the Synopsys Sentaurus-TCAD suite. Hall effect measurements and Hg-probe C-V investigation on single κ-Ga2O3 layers, either as-grown or submitted to thermal treatments, support the hypothesis of the subsurface donor reduction during the SnO deposition. This study can shed light on the subsurface doping density variation in κ-Ga2O3 due to high-temperature treatment. The investigation of the SnO/κ-Ga2O3 heterointerface provides useful hints for the fabrication of diodes based on κ-Ga2O3. The methodological approach presented here is of general interest for reliable characterization of planar diodes.

Identification and characterization of putative biomarkers and therapeutic axis in Glioblastoma multiforme microenvironment

Non-cellular secretory components, including chemokines, cytokines, and growth factors in the tumor microenvironment, are often dysregulated, impacting tumorigenesis in Glioblastoma multiforme (GBM) microenvironment, where the prognostic significance of the current treatment remains unsatisfactory. Recent studies have demonstrated the potential of post-translational modifications (PTM) and their respective enzymes, such as acetylation and ubiquitination in GBM etiology through modulating signaling events. However, the relationship between non-cellular secretory components and post-translational modifications will create a research void in GBM therapeutics. Therefore, we aim to bridge the gap between non-cellular secretory components and PTM modifications through machine learning and computational biology approaches. Herein, we highlighted the importance of BMP1, CTSB, LOX, LOXL1, PLOD1, MMP9, SERPINE1, and SERPING1 in GBM etiology. Further, we demonstrated the positive relationship between the E2 conjugating enzymes (Ube2E1, Ube2H, Ube2J2, Ube2C, Ube2J2, and Ube2S), E3 ligases (VHL and GNB2L1) and substrate (HIF1A). Additionally, we reported the novel HAT1-induced acetylation sites of Ube2S (K211) and Ube2H (K8, K52). Structural and functional characterization of Ube2S (8) and Ube2H (1) have identified their association with protein kinases. Lastly, our results found a putative therapeutic axis HAT1-Ube2S(K211)-GNB2L1-HIF1A and potential predictive biomarkers (CTSB, HAT1, Ube2H, VHL, and GNB2L1) that play a critical role in GBM pathogenesis.

β-Ga2O3-Based Power Devices: A Concise Review

Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-generation wide bandgap semiconductor, owing to its natural physical and chemical properties. In this review article, we selectively summarized the recent advances on the experimental and theoretical demonstration of β-Ga2O3-based power devices, including Schottky barrier diodes and field-effect transistors, aiming for an inherent comprehending of the operating mechanisms, discussion on the obstacles to be addressed, and providing some comprehensive guidance for further developments. In the short run, Ga2O3 may well be promising to lead power electronics.

Control and understanding of metal contacts to β-Ga2O3 single crystals: a review

Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and high thermal stability. Recently, a considerable achievement has been obtained for the growth of high-quality β-Ga2O3 and high performance β-Ga2O3 based devices. However, rapid advance in device performance can be limited by the critical issues of metal contacts to β-Ga2O3 such as barrier height, leakage current, ohmic contact, and surface, interfacial and deep states. This article aims to provide a review on the recent studies in the control and understanding of metal contacts to β-Ga2O3, particularly in terms of the barrier formation. This review suggests that understanding the current transport mechanisms of metal contacts to β-Ga2O3 more thoroughly is necessary to enhance the performance, stability and reliability of β-Ga2O3 based devices.