Design, Fabrication, and Dynamic Environmental Test of a Piezoresistive Pressure Sensor

Graphene-based Two-Stage Enhancement Pressure Sensor for Subtle Mechanical Force Monitoring

The development of pressure sensors with high sensitivity and a low detection limit for subtle mechanical force monitoring and the understanding of the sensing mechanism behind subtle mechanical force monitoring are of great significance for intelligent technology. Here, we proposed a graphene-based two-stage enhancement pressure sensor (GTEPS), and we analyzed the difference between subtle mechanical force monitoring and conventional mechanical force monitoring. The GTEPS exhibited a high sensitivity of 62.2 kPa-1 and a low detection limit of 0.1 Pa. Leveraging its excellent performance, the GTEPS was successfully applied in various subtle mechanical force monitoring applications, including acoustic wave detection, voice-print recognition, and pulse wave monitoring. In acoustic wave detection, the GTEPS achieved a 100% recognition accuracy for six words. In voiceprint recognition, the sensor exhibited accurate identification of distinct voiceprints among individuals. Furthermore, in pulse wave monitoring, GTEPS demonstrated effective detection of pulse waves. By combination of the pulse wave signals with electrocardiogram (ECG) signals, it enabled the assessment of blood pressure. These results demonstrate the excellent performance of GTEPS and highlight its great potential for subtle mechanical force monitoring and its various applications. The current results indicate that GTEPS shows great potential for applications in subtle mechanical force monitoring.

Editorial for the Special Issue on Flexible and Wearable Sensors

Flexible wearable sensors have garnered significant interest in the fields of human-computer interaction, materials science, and biomedicine [...].

An SOI-Structured Piezoresistive Differential Pressure Sensor with High Performance

This paper presents a piezoresistive differential pressure sensor based on a silicon-on-insulator (SOI) structure for low pressure detection from 0 to 30 kPa. In the design phase, the stress distribution on the sensing membrane surface is simulated, and the doping concentration and geometry of the piezoresistor are evaluated. By optimizing the process, the realization of the pressure sensing diaphragm with a controllable thickness is achieved, and good ohmic contact is ensured. To obtain higher sensitivity and high temperature stability, an SOI structure with a 1.5 µm ultra-thin monocrystalline silicon layer is used in device manufacturing. The device diaphragm size is 700 µm × 700 µm × 2.1 µm. The experimental results show that the fabricated piezoresistive pressure sensor has a high sensitivity of 2.255 mV/V/kPa and a sensing resolution of less than 100 Pa at room temperature. The sensor has a temperature coefficient of sensitivity (TCS) of -0.221 %FS/°C and a temperature coefficient of offset (TCO) of -0.209 %FS/°C at operating temperatures ranging from 20 °C to 160 °C. The reported piezoresistive microelectromechanical systems (MEMS) pressure sensors are fabricated on 8-inch wafers using standard CMOS-compatible processes, which provides a volume solution for embedded integrated precision detection applications of air pressure, offering better insights for high-temperature and miniaturized low-pressure sensor research.