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Yuan H, Zhao L, Zhang J. Experimental Parametric Investigation of Nanosecond Laser-Induced Surface Graphitization of Nano-Crystalline Diamond. MATERIALS (BASEL, SWITZERLAND) 2024; 17:2704. [PMID: 38893967 PMCID: PMC11173919 DOI: 10.3390/ma17112704] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2024] [Revised: 05/28/2024] [Accepted: 05/29/2024] [Indexed: 06/21/2024]
Abstract
While nano-crystalline diamond (NCD) is a promising engineering composite material for its unique mechanical properties, achieving the ultrahigh surface quality of NCD-based components through conventional grinding and polishing is challenging due to its exceptional hardness and brittleness. In the present work, we experimentally investigate the nanosecond laser ablation-induced graphitization characteristics of NCD, which provides a critical pretreatment method of NCD for realizing its superlative surface finish. Specifically, systematic experimental investigations of the nanosecond pulsed laser ablation of NCD are carried out, in which the characteristics of graphitization are qualitatively characterized by the Raman spectroscopy detection of the ablated area of the microhole and microgroove. Subsequently, the influence of laser processing parameters on the degree and morphological characteristics of graphitization is evaluated based on experimental data and related interpretation, from which optimized parameters for maximizing the graphitization of NCD are then identified. The findings reported in the current work provide guidance for promoting the machinability of NCD via laser irradiation-induced surface modification.
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Affiliation(s)
- Huixin Yuan
- Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, China;
| | - Liang Zhao
- Shenyang Aircraft Industry (Group) Co., Ltd., Shenyang 110850, China;
| | - Junjie Zhang
- Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, China;
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Zhang D, Chen T, Shen T, Zhang Y, He Y, Si J, Hou X. Sub-diffraction limited nanogroove fabrication of 30 nm features on diamond films using 800 nm femtosecond laser irradiation. Heliyon 2024; 10:e24240. [PMID: 38304800 PMCID: PMC10831597 DOI: 10.1016/j.heliyon.2024.e24240] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2023] [Revised: 11/28/2023] [Accepted: 01/04/2024] [Indexed: 02/03/2024] Open
Abstract
By controlling the 800 nm fs laser energy and applying an isopropyl alcohol environment, controlled sub-diffraction limited lithography with a characteristic structure of approximately 30 nm was achieved on the surface of diamond films, and diamond gratings with a period of 200 nm were fabricated. The fabrication of single grooves with a feature size of 30 nm demonstrates the potential for patterning periodic or nonperiodic structures, and the fabrication of 200 nm periodic grating structures demonstrates the ability of the technique to withstand laser proximity effects. This enhances the technology of diamond film nanofabrication and broadens its potential applications in areas such as optoelectronics and biology.
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Affiliation(s)
- Daqi Zhang
- Key Laboratory of Physical Electronics and Devices, Ministry of Education and Shaanxi Key Laboratory of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China
| | - Tao Chen
- Key Laboratory of Physical Electronics and Devices, Ministry of Education and Shaanxi Key Laboratory of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China
| | - Tianlun Shen
- Key Laboratory of Physical Electronics and Devices, Ministry of Education and Shaanxi Key Laboratory of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China
| | - Yu Zhang
- Key Laboratory of Physical Electronics and Devices, Ministry of Education and Shaanxi Key Laboratory of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China
| | - Yingsong He
- Key Laboratory of Physical Electronics and Devices, Ministry of Education and Shaanxi Key Laboratory of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China
| | - Jinhai Si
- Key Laboratory of Physical Electronics and Devices, Ministry of Education and Shaanxi Key Laboratory of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China
| | - Xun Hou
- Key Laboratory of Physical Electronics and Devices, Ministry of Education and Shaanxi Key Laboratory of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China
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