ScAlN Film-Based Piezoelectric Micromechanical Ultrasonic Transducers with Dual-Ring Structure for Distance Sensing

Optical proximity sensors using multiple quantum well didoes

InGaN/GaN multiple quantum well (MQW) diodes perform multiple functions, such as optical emission, modulation and reception. In particular, the partially overlapping spectral region between the electroluminescence (EL) and responsivity spectra of each diode results in each diode being able to sense light from another diode of the same MQW structure. Here, we present a noncontact, optical proximity sensing system by integrating an MQW-based light transmitter and detector into a tiny GaN-on-sapphire chip. Changes in the external environment modulate the light emitted from the transmitter. Reflected light is received by the on-chip MQW detector, wherein the carried external modulation information is converted into electrical signals that can be extracted. The maximum detection proximity is approximately 17 mm, and the displacement detection accuracy is within 1 mm. Based on the detection of distance, we extend the application of the sensor to vibration and pressure detection. This monolithic integration design can replace external discrete light transmitter and detector systems to miniaturize reflective sensor architectures, enabling the development of novel optical sensors.

Stepped-Tube Backside Cavity Piezoelectric Ultrasound Transducer Based on Sc0.2AI0.8N Thin Films

This paper presents a novel piezoelectric micromachined ultrasonic transducer (PMUT) with theoretical simulation, fabrication, and testing. Conventional methods using a PCB or an external horn to adjust the PMUT acoustic field angle are limited by the need for transducer size. To address this limitation, the stepped-tube (expanded tube) backside cavity PMUT has been proposed. The stepped-tube PMUT and the tube PMUT devices have the same membrane structure, and the acoustic impedance matching of the PMUT is optimized by modifying the boundary conditions of the back cavity structure. The acoustic comparison experiments show that the average output sound pressure of the stepped-tube backside cavity PMUT has increased by 17%, the half-power-beam-width (θ-3db) has been reduced from 55° to 30° with a reduction of 45%, and the side lobe level signal is reduced from 147 mV to 66 mV. In addition, this work is fabricated on an eight-inch wafer. The process is compatible with standard complementary metal oxide semiconductor (CMOS), conditions are stable, and the cost is controllable, plus it facilitates the batch process. These conclusions suggest that the stepped-tube backside cavity PMUT will bring new, effective, and reliable solutions to ranging applications.