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Huang L, Zhu Z, Cheng C, Gao Y. A parylene/graphene UV photodetector with ultrahigh responsivity and long term stability. NANOTECHNOLOGY 2024; 35:365202. [PMID: 38744249 DOI: 10.1088/1361-6528/ad4b25] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Accepted: 05/14/2024] [Indexed: 05/16/2024]
Abstract
Long term stability, high responsivity, and fast response speed are essential for the commercialization of graphene photodetectors (GPDs). In this work, a parylene/graphene UV photodetector with long term stability, ultrahigh responsivity and fast response speed, is demonstrated. Parylene as a stable physical and chemical insulating layer reduces the environmental sensitivity of graphene, and enhances the performances of GPDs. In addition, utilizing bilayer electrodes reduces the buckling and damage of graphene after transferring. The parylene/graphene UV photodetector exhibits an ultrahigh responsivity of 5.82 × 105AW-1under 325 nm light irradiation at 1 V bias. Additionally, it shows a fast response speed with a rise time of 80μs and a fall time of 17μs, and a long term stability at 405 nm wavelength which is absent in the device without parylene. The parylene/graphene UV photodetector possesses superior performances. This paves the way for the commercial application of the high-performance graphene hybrid photodetectors, and provides a practical method for maintaining the long term stability of two dimensional (2D) materials.
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Affiliation(s)
- Liting Huang
- College of Science, China Agricultural University, Beijing 100083, People's Republic of China
| | - Zhaowei Zhu
- College of Science, China Agricultural University, Beijing 100083, People's Republic of China
| | - Chuantong Cheng
- Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
| | - Y Gao
- College of Science, China Agricultural University, Beijing 100083, People's Republic of China
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2
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Idisi DO, Ahia CC, Meyer EL, Bodunrin JO, Benecha EM. Graphene oxide:Fe 2O 3 nanocomposites for photodetector applications: experimental and ab initio density functional theory study. RSC Adv 2023; 13:6038-6050. [PMID: 36825286 PMCID: PMC9942109 DOI: 10.1039/d3ra00174a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2023] [Accepted: 02/15/2023] [Indexed: 02/23/2023] Open
Abstract
In this report, a GO:Fe2O3 nanocomposite was synthesized using a one-step covalent attachment approach using a sol-gel technique. The optical absorbance, photoconductive, photo-capacitive, and electrical properties were obtained using spectroscopy, and current-voltage (I-V) measurements. An enhanced optical absorbance with corresponding band gap reduction is observed when Fe2O3 nanoparticles are incorporated in GO. A corresponding enhanced photoconductance in the order of ×101 was observed due to the impact of band gap narrowing. The enhanced photoconductivity and photo-capacitance can be attributed to energy and charge transfer between GO and Fe atoms, leading to the generation of photo-induced excitons. Density function theory calculations indicate increased charge transfer when GO is doped with Fe-O atoms, which is consistent with experimental data. The observed results could potentially enable the use of GO:Fe2O3 nanocomposites for photodetectors and other optoelectronic applications.
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Affiliation(s)
- David O. Idisi
- Fort Hare Institute of Technology, University of Fort HarePrivate Bag X1314Alice5700South Africa
| | - Chinedu C. Ahia
- Fort Hare Institute of Technology, University of Fort HarePrivate Bag X1314Alice5700South Africa
| | - Edson L. Meyer
- Fort Hare Institute of Technology, University of Fort HarePrivate Bag X1314Alice5700South Africa
| | - Joseph O. Bodunrin
- Department of Physics, CSET, University of South AfricaPrivate Bag X6, Florida Science Campus, Christiaan de Wet and Pioneer Avenue, Florida Park, Florida1710JohannesburgSouth Africa
| | - Evans M. Benecha
- Department of Physics, CSET, University of South AfricaPrivate Bag X6, Florida Science Campus, Christiaan de Wet and Pioneer Avenue, Florida Park, Florida1710JohannesburgSouth Africa
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3
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Colmiais I, Silva V, Borme J, Alpuim P, Mendes PM. Extraction of Graphene's RF Impedance through Thru-Reflect-Line Calibration. MICROMACHINES 2023; 14:215. [PMID: 36677276 PMCID: PMC9865775 DOI: 10.3390/mi14010215] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/16/2022] [Revised: 01/09/2023] [Accepted: 01/12/2023] [Indexed: 06/17/2023]
Abstract
Graphene has unique properties that can be exploited for radiofrequency applications. Its characterization is key for the development of new graphene devices, circuits, and systems. Due to the two-dimensional nature of graphene, there are challenges in the methodology to extract relevant characteristics that are necessary for device design. In this work, the Thru-Reflect-Line (TRL) calibration was evaluated as a solution to extract graphene's electrical characteristics from 1 GHz to 65 GHz, where the calibration structures' requirements were analyzed. It was demonstrated that thick metallic contacts, a low-loss substrate, and a short and thin contact are necessary to characterize graphene. Furthermore, since graphene's properties are dependent on the polarization voltage applied, a backgate has to be included so that graphene can be characterized for different chemical potentials. Such characterization is mandatory for the design of graphene RF electronics and can be used to extract characteristics such as graphene's resistance, quantum capacitance, and kinetic inductance. Finally, the proposed structure was characterized, and graphene's resistance and quantum capacitance were extracted.
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Affiliation(s)
- Ivo Colmiais
- CMEMS—Center for Microelectromechanical Systems, University of Minho, Campus de Azurém, 4800-058 Guimarães, Portugal
- INL—International Iberian Nanotechnology Laboratory, Av. Mestre José Veiga, 4715-330 Braga, Portugal
| | - Vitor Silva
- CMEMS—Center for Microelectromechanical Systems, University of Minho, Campus de Azurém, 4800-058 Guimarães, Portugal
- INL—International Iberian Nanotechnology Laboratory, Av. Mestre José Veiga, 4715-330 Braga, Portugal
| | - Jérôme Borme
- INL—International Iberian Nanotechnology Laboratory, Av. Mestre José Veiga, 4715-330 Braga, Portugal
| | - Pedro Alpuim
- INL—International Iberian Nanotechnology Laboratory, Av. Mestre José Veiga, 4715-330 Braga, Portugal
- Center of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal
| | - Paulo M. Mendes
- CMEMS—Center for Microelectromechanical Systems, University of Minho, Campus de Azurém, 4800-058 Guimarães, Portugal
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Seo J, Kim YJ, Yoo H. Zero Bias Operation: Photodetection Behaviors Obtained by Emerging Materials and Device Structures. MICROMACHINES 2022; 13:2089. [PMID: 36557389 PMCID: PMC9781907 DOI: 10.3390/mi13122089] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Revised: 11/24/2022] [Accepted: 11/24/2022] [Indexed: 06/17/2023]
Abstract
Zero-biased photodetectors have desirable characteristics for potentially next-generation devices, including high efficiency, rapid response, and low power operation. In particular, the detector efficiency can be improved simply by changing the electrode contact geometry or morphological structure of materials, which give unique properties such as energy band bending, photo absorbance and electric field distribution. In addition, several combinations of materials enable or disable the operation of selective wavelengths of light detection. Herein, such recent progresses in photodetector operating at zero-bias voltage are reviewed. Considering the advantages and promises of these low-power photodetectors, this review introduces various zero-bias implementations and reviews the key points.
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Affiliation(s)
- Juhyung Seo
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Yeong Jae Kim
- Korea Institute of Ceramic Engineering and Technology, Ceramic Total Solution Center, Icheon 17303, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
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5
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Thermodynamic Analysis and Experimental Study on the Oxidation of PbX (X = S, Se) Nanostructured Layers. MICROMACHINES 2022; 13:mi13081209. [PMID: 36014133 PMCID: PMC9412640 DOI: 10.3390/mi13081209] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/28/2022] [Revised: 07/25/2022] [Accepted: 07/27/2022] [Indexed: 11/30/2022]
Abstract
Heat treatment in an oxygen-containing medium is a necessary procedure in the technology of forming photodetectors and emitters based on lead chalcogenides. Lead chalcogenide layers (PbS, PbSe) were prepared via a chemical bath deposition method. Surface oxidation of lead chalcogenide layers was analyzed using X-ray diffraction and Raman spectroscopy methods, and thermodynamic analysis of the oxidation of PbSe and PbS layers was also performed. The calculated phase diagrams from 20 °C to 500 °C showed good agreement with the experimental results. According to the thermodynamic analysis, the oxidation products depend on the initial composition of the layers and temperature of the annealing. In some cases, the formation of a separate metallic phase Pb is possible along with the formation of lead oxide PbO and other oxides. The performed thermodynamic analysis makes it possible to substantiate the two-stage annealing temperature regimes which ensure an increase in the speed of photodetectors.
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Fawzi T, Rani S, Roy SC, Lee H. Photocatalytic Carbon Dioxide Conversion by Structurally and Materially Modified Titanium Dioxide Nanostructures. Int J Mol Sci 2022; 23:ijms23158143. [PMID: 35897719 PMCID: PMC9330242 DOI: 10.3390/ijms23158143] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/24/2022] [Revised: 07/21/2022] [Accepted: 07/22/2022] [Indexed: 12/18/2022] Open
Abstract
TiO2 has aroused considerable attentions as a promising photocatalytic material for decades due to its superior material properties in several fields such as energy and environment. However, the main dilemmas are its wide bandgap (3–3.2 eV), that restricts the light absorption in limited light wavelength region, and the comparatively high charge carrier recombination rate of TiO2, is a hurdle for efficient photocatalytic CO2 conversion. To tackle these problems, lots of researches have been implemented relating to structural and material modification to improve their material, optical, and electrical properties for more efficient photocatalytic CO2 conversion. Recent studies illustrate that crystal facet engineering could broaden the performance of the photocatalysts. As same as for nanostructures which have advantages such as improved light absorption, high surface area, directional charge transport, and efficient charge separation. Moreover, strategies such as doping, junction formation, and hydrogenation have resulted in a promoted photocatalytic performance. Such strategies can markedly change the electronic structure that lies behind the enhancement of the solar spectrum harnessing. In this review, we summarize the works that have been carried out for the enhancement of photocatalytic CO2 conversion by material and structural modification of TiO2 and TiO2-based photocatalytic system. Moreover, we discuss several strategies for synthesis and design of TiO2 photocatalysts for efficient CO2 conversion by nanostructure, structure design of photocatalysts, and material modification.
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Affiliation(s)
- Tarek Fawzi
- Department of Photonics, National Sun Yat-sen University, No. 70, Lien-Hai Rd, Kaohsiung 80424, Taiwan; or
| | - Sanju Rani
- Department of Physics, SRM Institute of Science and Technology, Ramapuram Campus, Chennai 600089, Tamil Nadu, India;
| | - Somnath C. Roy
- Semiconducting Oxide Materials, Nanostructures and Tailored Heterojunction (SOMNaTH) Lab, Functional Oxides Research Group (FORG) and 2D Materials and Innovation Centre, Department of Physics, IIT Madras, Chennai 600036, Tamil Nadu, India;
| | - Hyeonseok Lee
- Department of Photonics, National Sun Yat-sen University, No. 70, Lien-Hai Rd, Kaohsiung 80424, Taiwan; or
- Correspondence: ; Tel.: +886-7-525-2000 (ext. 4473)
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7
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Plasmon-enhanced reduced graphene oxide photodetector with monometallic of Au and Ag nanoparticles at VIS-NIR region. Sci Rep 2021; 11:19688. [PMID: 34608217 PMCID: PMC8490468 DOI: 10.1038/s41598-021-99189-w] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/29/2021] [Accepted: 09/22/2021] [Indexed: 11/08/2022] Open
Abstract
Hybrids plasmonic nanoparticles (NPs) and unique 2D graphene significantly enhanced the photoresponse of the photodetectors. The metallic NPs that exhibit localized surface plasmon resonance (LSPR) improves strong light absorption, scattering and localized electromagnetic field by the incident photons depending on the optimum condition of NPs. We report high-performance photodetectors based on reduced graphene oxide (rGO) integrated with monometallic of Au and Ag nanoparticles via a familiar fabrication technique using an electron beam evaporation machine. Under 680 nm illumination of light, our rGO photodetector exhibited the highest performance for Au-rGO with the highest responsivity of 67.46 AW-1 and the highest specific detectivity (2.39 × 1013 Jones). Meanwhile, Ag-rGO achieved the highest responsivity of 17.23 AW-1, specific detectivity (7.17 × 1011 Jones) at 785 nm. The response time are 0.146 µs and 0.135 µs for Au-rGO and Ag-rGO respectively for both wavelengths. The proposed photodetector with combining monometallic and graphene provide a new strategy to construct reliable and next-generation optoelectronic devices at VIS-NIR region.
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8
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Wu J, Gong M. Quantum dots/graphene nanohybrids photodetectors: progress and perspective. NANO EXPRESS 2021. [DOI: 10.1088/2632-959x/ac2293] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Abstract
Abstract
Semiconductor quantum dots/graphene heterostructure nanohybrids combine the advantages of the enhanced light–matter interaction and spectral tunability of quantum dots (QDs) and high charge mobility in graphene as a charge transport pathway, providing a unique platform for exploration of photodetectors with high performance. In particular, the QDs/graphene nanohybrids allow resolution to the critical issue of charge transport in QDs-only photodetectors stemming from the low charge mobility associated with both QD surface defect states and inter-QD junctions. Furthermore, the achieved capability in industrial-scale fabrication of graphene and colloidal QDs has motivated efforts in research of QDs/graphene nanohybrids focal plane arrays that are expected to be not only high performance and low cost, but also light-weight, flexible and wearable. This paper aims to highlight recent progress made in the research and development of QDs/graphene nanohybrid photodetectors and discuss the challenges remained towards their commercial applications.
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9
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Sahoo A, Reiss P, Quesnel E, Hyot B. Optical modulation frequency mediated tunable response time and responsivity in graphene-PbS QD based hybrid photodetectors. NANOTECHNOLOGY 2021; 32:405205. [PMID: 34126600 DOI: 10.1088/1361-6528/ac0b19] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2021] [Accepted: 06/14/2021] [Indexed: 06/12/2023]
Abstract
Graphene/lead sulfide (PbS) quantum dot (QD) hybrid infrared photodetectors have gained a lot of attention in recent times due to their high resolution and cost effective fabrication process. In spite of exhibiting remarkably high responsivity, such hybrid detectors are slow as a result of their internal gain mechanism process. In this work, we present a convenient strategy to modulate the correlation between their responsivity and response time giving access to high resolution fast photodetectors in the broadband wavelength range for imaging purpose. Using a layer-by-layer deposition technique including simultaneous ligand exchange and surface passivation at each layer, homogeneous PbS QD films on chemical vapour deposition grown single layer graphene could be achieved. The obtained hybrid phototransistors exhibit a high responsivity of 108A W-1and sensitivity down to 0.1 pW incident light power in the near-infrared wavelength range. By modulating the incident light at a modulation frequency up to 50 kHz, we achieve a response time as low as 5μs while preserving a much higher responsivity (144 A W-1) compared to existing commercial room temperature infrared photodetectors.
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Affiliation(s)
- Anindita Sahoo
- Université Grenoble Alpes, CEA, LETI, MINATEC Campus, F-38000 Grenoble, France
| | - Peter Reiss
- Université Grenoble Alpes, CEA, CNRS, IRIG, SyMMES, STEP, F-38000 Grenoble, France
| | - Etienne Quesnel
- Université Grenoble Alpes, CEA, LETI, MINATEC Campus, F-38000 Grenoble, France
| | - Bérangére Hyot
- Université Grenoble Alpes, CEA, LETI, MINATEC Campus, F-38000 Grenoble, France
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10
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Ibrayev NK, Seliverstova EV, Sadykova AE, Serikov TM. Synthesis, Structure, and Physical Properties of a Nanocomposite Based on Graphene Oxide and TiO2. RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A 2021. [DOI: 10.1134/s0036024421040105] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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11
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Sundararaju U, Mohammad Haniff MAS, Ker PJ, Menon PS. MoS 2/h-BN/Graphene Heterostructure and Plasmonic Effect for Self-Powering Photodetector: A Review. MATERIALS (BASEL, SWITZERLAND) 2021; 14:1672. [PMID: 33805402 PMCID: PMC8037851 DOI: 10.3390/ma14071672] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/30/2020] [Revised: 03/11/2021] [Accepted: 03/18/2021] [Indexed: 11/17/2022]
Abstract
A photodetector converts optical signals to detectable electrical signals. Lately, self-powered photodetectors have been widely studied because of their advantages in device miniaturization and low power consumption, which make them preferable in various applications, especially those related to green technology and flexible electronics. Since self-powered photodetectors do not have an external power supply at zero bias, it is important to ensure that the built-in potential in the device produces a sufficiently thick depletion region that efficiently sweeps the carriers across the junction, resulting in detectable electrical signals even at very low-optical power signals. Therefore, two-dimensional (2D) materials are explored as an alternative to silicon-based active regions in the photodetector. In addition, plasmonic effects coupled with self-powered photodetectors will further enhance light absorption and scattering, which contribute to the improvement of the device's photocurrent generation. Hence, this review focuses on the employment of 2D materials such as graphene and molybdenum disulfide (MoS2) with the insertion of hexagonal boron nitride (h-BN) and plasmonic nanoparticles. All these approaches have shown performance improvement of photodetectors for self-powering applications. A comprehensive analysis encompassing 2D material characterization, theoretical and numerical modelling, device physics, fabrication and characterization of photodetectors with graphene/MoS2 and graphene/h-BN/MoS2 heterostructures with plasmonic effect is presented with potential leads to new research opportunities.
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Affiliation(s)
- Umahwathy Sundararaju
- Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 43600, Malaysia; (U.S.); (M.A.S.M.H.)
| | | | - Pin Jern Ker
- Institute of Sustainable Energy (ISE), Universiti Tenaga Nasional (UNITEN), Kajang 43000, Malaysia;
| | - P. Susthitha Menon
- Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 43600, Malaysia; (U.S.); (M.A.S.M.H.)
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Gudaitis R, Lazauskas A, Jankauskas Š, Meškinis Š. Catalyst-Less and Transfer-Less Synthesis of Graphene on Si(100) Using Direct Microwave Plasma Enhanced Chemical Vapor Deposition and Protective Enclosures. MATERIALS (BASEL, SWITZERLAND) 2020; 13:E5630. [PMID: 33321771 PMCID: PMC7763619 DOI: 10.3390/ma13245630] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/30/2020] [Revised: 12/07/2020] [Accepted: 12/08/2020] [Indexed: 11/16/2022]
Abstract
In this study, graphene was synthesized on the Si(100) substrates via the use of direct microwave plasma-enhanced chemical vapor deposition (PECVD). Protective enclosures were applied to prevent excessive plasma etching of the growing graphene. The properties of synthesized graphene were investigated using Raman scattering spectroscopy and atomic force microscopy. Synthesis time, methane and hydrogen gas flow ratio, temperature, and plasma power effects were considered. The synthesized graphene exhibited n-type self-doping due to the charge transfer from Si(100). The presence of compressive stress was revealed in the synthesized graphene. It was presumed that induction of thermal stress took place during the synthesis process due to the large lattice mismatch between the growing graphene and the substrate. Importantly, it was demonstrated that continuous horizontal graphene layers can be directly grown on the Si(100) substrates if appropriate configuration of the protective enclosure is used in the microwave PECVD process.
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Affiliation(s)
| | | | | | - Šarūnas Meškinis
- Institute of Materials Science, Kaunas University of Technology, K. Baršausko St. 59, LT-51423 Kaunas, Lithuania; (R.G.); (A.L.); (Š.J.)
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Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs. MICROMACHINES 2020; 11:mi11090842. [PMID: 32911711 PMCID: PMC7569792 DOI: 10.3390/mi11090842] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/10/2020] [Revised: 09/03/2020] [Accepted: 09/05/2020] [Indexed: 11/16/2022]
Abstract
With the aim to take advantage from the existing technologies in microelectronics, photodetectors should be realized with materials compatible with them ensuring, at the same time, good performance. Although great efforts are made to search for new materials that can enhance performance, photodetector (PD) based on them results often expensive and difficult to integrate with standard technologies for microelectronics. For this reason, the group IV semiconductors, which are currently the main materials for electronic and optoelectronic devices fabrication, are here reviewed for their applications in light sensing. Moreover, as new materials compatible with existing manufacturing technologies, PD based on colloidal semiconductor are revised. This work is particularly focused on developments in this area over the past 5-10 years, thus drawing a line for future research.
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Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection. MICROMACHINES 2020; 11:mi11090812. [PMID: 32867054 PMCID: PMC7570377 DOI: 10.3390/mi11090812] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/14/2020] [Revised: 08/24/2020] [Accepted: 08/25/2020] [Indexed: 11/21/2022]
Abstract
This work demonstrates a self-powered and broadband photodetector using a heterojunction formed by camphor-based chemical vaper deposition (CVD) bilayer graphene on p-Si substrates. Here, graphene/p-Si heterostructures and graphene layers serve as ultra-shallow junctions for UV absorption and zero bandgap junction materials (<Si bandgap (1.1 eV)) for long-wave near-infrared (LWNIR) absorption, respectively. According to the Raman spectra and large-area (16 × 16 μm2) Raman mapping, a low-defect, >95% coverage bilayer and high-uniformity graphene were successfully obtained by camphor-based CVD processes. Furthermore, the carrier mobility of the camphor-based CVD bilayer graphene at room temperature is 1.8 × 103 cm2/V·s. Due to the incorporation of camphor-based CVD graphene, the graphene/p-Si Schottky junctions show a good rectification property (rectification ratio of ~110 at ± 2 V) and good performance as a self-powered (under zero bias) photodetector from UV to LWNIR. The photocurrent to dark current ratio (PDCR) value is up to 230 at 0 V under white light illumination, and the detectivity (D*) is 8 × 1012 cmHz1/2/W at 560 nm. Furthermore, the photodetector (PD) response/decay time (i.e., rise/fall time) is ~118/120 μs. These results support the camphor-based CVD bilayer graphene/Si Schottky PDs for use in self-powered and ultra-broadband light detection in the future.
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15
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Photothermal Sensing of Nano-Devices Made of Graphene Materials. SENSORS 2020; 20:s20133671. [PMID: 32630009 PMCID: PMC7374454 DOI: 10.3390/s20133671] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/26/2020] [Revised: 06/19/2020] [Accepted: 06/24/2020] [Indexed: 11/17/2022]
Abstract
Graphene is widely used as the basic materials of nano optical devices and sensors on account of its special structures and excellent photoelectric properties. Graphene is considered as an ideal material for photodetectors because of its ultra-wide absorption spectrum from the ultraviolet to the terahertz band, ultrahigh carrier mobility and ultrafast photoreaction speed. In this study, a photothermal nano-device was made using graphene that was transferred to an electrode using an all-dry viscoelastic stamping method. The nano-device has the advantages of simplicity, high efficiency and instant measurement. This nano-device was used to measure the light absorption of graphene, and the calculated light absorption rate of graphene is basically consistent with previous research results. Experiments on irradiation at different wavelengths and thermal heating at different temperatures show that the nano-device has an excellent response to near-infrared and mid-infrared light. The conclusions provide an experimental basis for the research, design and fabrication of nano-devices, and this device can provide an effective method for detecting light and temperature in areas such as electronic components and solar cells.
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Thakur MK, Fang CY, Yang YT, Effendi TA, Roy PK, Chen RS, Ostrikov KK, Chiang WH, Chattopadhyay S. Microplasma-Enabled Graphene Quantum Dot-Wrapped Gold Nanoparticles with Synergistic Enhancement for Broad Band Photodetection. ACS APPLIED MATERIALS & INTERFACES 2020; 12:28550-28560. [PMID: 32463650 DOI: 10.1021/acsami.0c06753] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Plasmonic nanostructure/semiconductor nanohybrids offer many opportunities for emerging electronic and optoelectronic device applications because of their unique geometries in the nanometer scale and material properties. However, the development of a simple and scalable synthesis of plasmonic nanostructure/semiconductor nanohybrids is still lacking. Here, we report a direct synthesis of colloidal gold nanoparticle/graphene quantum dot (Au@GQD) nanohybrids under ambient conditions using microplasmas and their application as photoabsorbers for broad band photodetectors (PDs). Due to the unique AuNP core and graphene shell nanostructures in the synthesized Au@GQD nanohybrids, the plasmonic absorption of the AuNP core extends the usable spectral range of the photodetectors. It is demonstrated that the Au@GQD-based visible light photodetector simultaneously possesses an extraordinary photoresponsivity of ∼103 A/W, ultrahigh detectivity of 1013 Jones, and fast response time in the millisecond scale (65 ms rise time and 53 ms fall time). We suggest that the synergistic effect can be attributed to the strong fluorescence quenching in Au@GQD coupled with the two-dimensional graphene layer in the device. This work provides knowledge of tailoring the optical absorption in GQDs with plasmonic AuNPs and the corresponding photophysics for broad band response in PD-related devices.
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Affiliation(s)
- Mukesh Kumar Thakur
- Institute of Biophotonics, National Yang Ming University, 155, Sec-2, Li Nong Street, Taipei 112, Taiwan
| | - Chih-Yi Fang
- Department of Chemical Engineering, National Taiwan University of Science and Technology, 43, Keelung Road, Sec. 4, Da'an District, Taipei 10607, Taiwan
| | - Yung-Ta Yang
- Institute of Biophotonics, National Yang Ming University, 155, Sec-2, Li Nong Street, Taipei 112, Taiwan
| | - Tirta Amerta Effendi
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, 43, Keelung Road, Sec. 4, Da'an District, Taipei 10607, Taiwan
| | - Pradip Kumar Roy
- Institute of Biophotonics, National Yang Ming University, 155, Sec-2, Li Nong Street, Taipei 112, Taiwan
| | - Ruei-San Chen
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, 43, Keelung Road, Sec. 4, Da'an District, Taipei 10607, Taiwan
| | - Kostya Ken Ostrikov
- School of Chemistry and Physics and Centre for Materials Science, Queensland University of Technology, Brisbane, QLD 4000, Australia
| | - Wei-Hung Chiang
- Department of Chemical Engineering, National Taiwan University of Science and Technology, 43, Keelung Road, Sec. 4, Da'an District, Taipei 10607, Taiwan
| | - Surojit Chattopadhyay
- Institute of Biophotonics, National Yang Ming University, 155, Sec-2, Li Nong Street, Taipei 112, Taiwan
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17
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Orzechowska S, Mazurek A, Świsłocka R, Lewandowski W. Electronic Nose: Recent Developments in Gas Sensing and Molecular Mechanisms of Graphene Detection and Other Materials. MATERIALS 2019; 13:ma13010080. [PMID: 31877901 PMCID: PMC6981730 DOI: 10.3390/ma13010080] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/20/2019] [Revised: 12/17/2019] [Accepted: 12/19/2019] [Indexed: 12/18/2022]
Abstract
Keywords: graphene; electronic nose; carbon nanotubes; porphyrins; conductive polymers.
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Affiliation(s)
- Sylwia Orzechowska
- M. Smoluchowski Institute of Physics, Jagiellonian University, 30-348 Krakow, Poland
- Correspondence: ; Tel.: +48-12-664-4637
| | - Andrzej Mazurek
- Faculty of Pharmacy, Medical University of Warsaw, 02-097 Warszawa, Poland;
| | - Renata Świsłocka
- Department of Chemistry, Biology and Biotechnology, Bialystok University of Technology, 15-351 Bialystok, Poland; (R.Ś.); (W.L.)
| | - Włodzimierz Lewandowski
- Department of Chemistry, Biology and Biotechnology, Bialystok University of Technology, 15-351 Bialystok, Poland; (R.Ś.); (W.L.)
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18
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Nekrasov N, Kireev D, Omerović N, Emelianov A, Bobrinetskiy I. Photo-Induced Doping in a Graphene Field-Effect Transistor with Inkjet-Printed Organic Semiconducting Molecules. NANOMATERIALS 2019; 9:nano9121753. [PMID: 31835474 PMCID: PMC6955941 DOI: 10.3390/nano9121753] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/15/2019] [Revised: 12/01/2019] [Accepted: 12/04/2019] [Indexed: 01/08/2023]
Abstract
In this work, we report a novel method of maskless doping of a graphene channel in a field-effect transistor configuration by local inkjet printing of organic semiconducting molecules. The graphene-based transistor was fabricated via large-scale technology, allowing for upscaling electronic device fabrication and lowering the device's cost. The altering of the functionalization of graphene was performed through local inkjet printing of N,N'-Dihexyl-3,4,9,10-perylenedicarboximide (PDI-C6) semiconducting molecules' ink. We demonstrated the high resolution (about 50 µm) and accurate printing of organic ink on bare chemical vapor deposited (CVD) graphene. PDI-C6 forms nanocrystals onto the graphene's surface and transfers charges via π-π stacking to graphene. While the doping from organic molecules was compensated by oxygen molecules under normal conditions, we demonstrated the photoinduced current generation at the PDI-C6/graphene junction with ambient light, a 470 nm diode, and 532 nm laser sources. The local (in the scale of 1 µm) photoresponse of 0.5 A/W was demonstrated at a low laser power density. The methods we developed open the way for local functionalization of an on-chip array of graphene by inkjet printing of different semiconducting organic molecules for photonics and electronics.
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Affiliation(s)
- Nikita Nekrasov
- National Research University of Electronic Technology, 124498 Moscow, Russia; (N.N.); (A.E.)
| | - Dmitry Kireev
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78758, USA;
| | - Nejra Omerović
- BioSense Institute-Research and Development Institute for Information Technologies in Biosystems, University of Novi Sad, 21000 Novi Sad, Serbia;
| | - Aleksei Emelianov
- National Research University of Electronic Technology, 124498 Moscow, Russia; (N.N.); (A.E.)
- P.N. Lebedev Physical Institute of the Russian Academy of Sciences, 119991 Moscow, Russia
| | - Ivan Bobrinetskiy
- National Research University of Electronic Technology, 124498 Moscow, Russia; (N.N.); (A.E.)
- BioSense Institute-Research and Development Institute for Information Technologies in Biosystems, University of Novi Sad, 21000 Novi Sad, Serbia;
- Correspondence: or
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19
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Jet Nebulizer Sprayed WO3-Nanoplate Arrays for High-Photoresponsivity Based Metal–Insulator–Semiconductor Structured Schottky Barrier Diodes. J Inorg Organomet Polym Mater 2019. [DOI: 10.1007/s10904-019-01285-y] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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20
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Zero-Bias Visible to Near-Infrared Horizontal p-n-p TiO 2 Nanotubes Doped Monolayer Graphene Photodetector. Molecules 2019; 24:molecules24101870. [PMID: 31096628 PMCID: PMC6572334 DOI: 10.3390/molecules24101870] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2019] [Revised: 05/03/2019] [Accepted: 05/08/2019] [Indexed: 01/21/2023] Open
Abstract
We present a p-n-p monolayer graphene photodetector doped with titanium dioxide nanotubes for detecting light from visible to near-infrared (405 to 1310 nm) region. The built-in electric field separates the photo-induced electrons and holes to generate photocurrent without bias voltage, which allows the device to have meager power consumption. Moreover, the detector is very sensitive to the illumination area, and we analyze the reason using the energy band theory. The response time of the detector is about 30 ms. The horizontal p-n-p device is a suitable candidate in zero-bias optoelectronic applications.
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