Review on the Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction Optoelectronic

Photoelectrocatalytic degradation of high-density polyethylene microplastics on TiO2-modified boron-doped diamond photoanode

Microplastic (MP) accumulation in the environment is accelerating rapidly, which has led to their effects on both the ecosystem and human life garnering much attention. This study is the first to examine the degradation of high-density polyethylene (HDPE) MPs via photoelectrocatalysis (PEC) using a TiO2-modified boron-doped diamond (BDD/TiO2) photoanode. This study was divided into three stages: (i) preparation of the photoanode through electrophoretic deposition of synthetic TiO2 nanoparticles on a BDD electrode; (ii) characterization of the modified photoanode using electrochemical, structural, and optical techniques; and (iii) degradation of HDPE MPs by electrochemical oxidation and photoelectrocatalysis on bare and modified BDD electrodes under dark and UV light conditions. The results indicate that the PEC technique degraded 89.91 ± 0.08% of HDPE MPs in a 10-h reaction and was more efficient at a lower current density (6.89 mA cm-1) with the BDD/TiO2 photoanode compared to electrochemical oxidation on bare BDD.

Metal-Oxide Heterojunction: From Material Process to Neuromorphic Applications

As technologies like the Internet, artificial intelligence, and big data evolve at a rapid pace, computer architecture is transitioning from compute-intensive to memory-intensive. However, traditional von Neumann architectures encounter bottlenecks in addressing modern computational challenges. The emulation of the behaviors of a synapse at the device level by ionic/electronic devices has shown promising potential in future neural-inspired and compact artificial intelligence systems. To address these issues, this review thoroughly investigates the recent progress in metal-oxide heterostructures for neuromorphic applications. These heterostructures not only offer low power consumption and high stability but also possess optimized electrical characteristics via interface engineering. The paper first outlines various synthesis methods for metal oxides and then summarizes the neuromorphic devices using these materials and their heterostructures. More importantly, we review the emerging multifunctional applications, including neuromorphic vision, touch, and pain systems. Finally, we summarize the future prospects of neuromorphic devices with metal-oxide heterostructures and list the current challenges while offering potential solutions. This review provides insights into the design and construction of metal-oxide devices and their applications for neuromorphic systems.

A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction

Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectronic device technology. This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. The discussion in this paper will provide a new scheme for the improvement of high-temperature diamond-based optoelectronics.

Porous BiVO4/Boron-Doped Diamond Heterojunction Photoanode with Enhanced Photoelectrochemical Activity

Constructing heterojunction is an attractive strategy for promoting photoelectrochemical (PEC) performance in water splitting and organic pollutant degradation. Herein, a novel porous BiVO4/Boron-doped Diamond (BiVO4/BDD) heterojunction photoanode containing masses of ultra-micro electrodes was successfully fabricated with an n-type BiVO4 film coated on a p-type BDD substrate by magnetron sputtering (MS). The surface structures of BiVO4 could be adjusted by changing the duration of deposition (Td). The morphologies, phase structures, electronic structures, and chemical compositions of the photoanodes were systematically characterized and analyzed. The best PEC activity with the highest current density of 1.8 mA/cm2 at 1.23 VRHE was achieved when Td was 30 min, and the sample showed the highest degradation efficiency towards tetracycline hydrochloride degradation (TCH) as well. The enhanced PEC performance was ascribed to the excellent charge transport efficiency as well as a lower carrier recombination rate, which benefited from the formation of BiVO4/BDD ultra-micro p-n heterojunction photoelectrodes and the porous structures of BiVO4. These novel photoanodes were expected to be employed in the practical PEC applications of energy regeneration and environmental management in the future.

Impact of Methanol Concentration on Properties of Ultra-Nanocrystalline Diamond Films Grown by Hot-Filament Chemical Vapour Deposition

Diamond is a very interesting material with a wide range of properties, making it highly applicable, for example, in power electronics, chemo- and biosensors, tools' coatings, and heaters. Due to the high demand for this innovative material based on the properties it is already expected to have, it is important to obtain homogeneous diamond layers for specific applications. Doping is often chosen to modify the properties of layers. However, there is an alternative way to achieve this goal and it is shown in this publication. The presented research results reveal that the change in methanol content during the Hot Filament Chemical Vapour Deposition (HF CVD) process is a sufficient factor to tune the properties of deposited layers. This was confirmed by analysing the properties of the obtained layers, which were determined using Raman spectroscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD), and an atomic force microscope (AFM), and the results were correlated with those of X-ray photoelectron spectroscopy (XPS). The results showed that the increasing of the concentration of methanol resulted in a slight decrease in the sp3 phase content. At the same time, the concentration of the -H, -OH, and =O groups increased with the increasing of the methanol concentration. This affirmed that by changing the content of methanol, it is possible to obtain layers with different properties.

Room Temperature Syntheses of ZnO and Their Structures

ZnO has many technological applications which largely depend on its properties, which can be tuned by controlled synthesis. Ideally, the most convenient ZnO synthesis is carried out at room temperature in an aqueous solvent. However, the correct temperature values are often loosely defined. In the current paper, we performed the synthesis of ZnO in an aqueous solvent by varying the reaction and drying temperatures by 10 °C steps, and we monitored the synthesis products primarily by XRD). We found out that a simple direct synthesis of ZnO, without additional surfactant, pumping, or freezing, required both a reaction (TP) and a drying (TD) temperature of 40 °C. Higher temperatures also afforded ZnO, but lowering any of the TP or TD below the threshold value resulted either in the achievement of Zn(OH)2 or a mixture of Zn(OH)2/ZnO. A more detailed Rietveld analysis of the ZnO samples revealed a density variation of about 4% (5.44 to 5.68 gcm−3) with the synthesis temperature, and an increase of the nanoparticles’ average size, which was also verified by SEM images. The average size of the ZnO synthesized at TP = TD = 40 °C was 42 nm, as estimated by XRD, and 53 ± 10 nm, as estimated by SEM. For higher synthesis temperatures, they vary between 76 nm and 71 nm (XRD estimate) or 65 ± 12 nm and 69 ± 11 nm (SEM estimate) for TP = 50 °C, TD = 40 °C, or TP = TD = 60 °C, respectively. At TP = TD = 30 °C, micrometric structures aggregated in foils are obtained, which segregate nanoparticles of ZnO if TD is raised to 40 °C. The optical properties of ZnO obtained by UV-Vis reflectance spectroscopy indicate a red shift of the band gap by ~0.1 eV.