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Tominov RV, Vakulov ZE, Avilov VI, Shikhovtsov IA, Varganov VI, Kazantsev VB, Gupta LR, Prakash C, Smirnov VA. Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13101583. [PMID: 37242000 DOI: 10.3390/nano13101583] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Revised: 04/28/2023] [Accepted: 05/04/2023] [Indexed: 05/28/2023]
Abstract
This paper proposes two different approaches to studying resistive switching of oxide thin films using scratching probe nanolithography of atomic force microscopy (AFM). These approaches allow us to assess the effects of memristor size and top-contact thickness on resistive switching. For that purpose, we investigated scratching probe nanolithography regimes using the Taguchi method, which is known as a reliable method for improving the reliability of the result. The AFM parameters, including normal load, scratch distance, probe speed, and probe direction, are optimized on the photoresist thin film by the Taguchi method. As a result, the pinholes with diameter ranged from 25.4 ± 2.2 nm to 85.1 ± 6.3 nm, and the groove array with a depth of 40.5 ± 3.7 nm and a roughness at the bottom of less than a few nanometers was formed. Then, based on the Si/TiN/ZnO/photoresist structures, we fabricated and investigated memristors with different spot sizes and TiN top contact thickness. As a result, the HRS/LRS ratio, USET, and ILRS are well controlled for a memristor size from 27 nm to 83 nm and ranged from ~8 to ~128, from 1.4 ± 0.1 V to 1.8 ± 0.2 V, and from (1.7 ± 0.2) × 10-10 A to (4.2 ± 0.6) × 10-9 A, respectively. Furthermore, the HRS/LRS ratio and USET are well controlled at a TiN top contact thickness from 8.3 ± 1.1 nm to 32.4 ± 4.2 nm and ranged from ~22 to ~188 and from 1.15 ± 0.05 V to 1.62 ± 0.06 V, respectively. The results can be used in the engineering and manufacturing of memristive structures for neuromorphic applications of brain-inspired artificial intelligence systems.
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Affiliation(s)
- Roman V Tominov
- Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia
- Department of Radioelectronics and Nanoelectronics, Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia
| | - Zakhar E Vakulov
- Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia
| | - Vadim I Avilov
- Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia
| | - Ivan A Shikhovtsov
- Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia
| | - Vadim I Varganov
- Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia
| | - Victor B Kazantsev
- Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia
- Institute of Biology and Biomedicine, National Research Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod 603950, Russia
| | - Lovi Raj Gupta
- Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia
- Division of Research and Development, Lovely Professional University, Phagwara 144411, Panjab, India
| | - Chander Prakash
- Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia
- School of Mechanical Engineering, Lovely Professional University, Phagwara 144411, Panjab, India
| | - Vladimir A Smirnov
- Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia
- Department of Radioelectronics and Nanoelectronics, Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia
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Tominov RV, Vakulov ZE, Polupanov NV, Saenko AV, Avilov VI, Ageev OA, Smirnov VA. Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:455. [PMID: 35159799 PMCID: PMC8838399 DOI: 10.3390/nano12030455] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/13/2021] [Revised: 01/20/2022] [Accepted: 01/25/2022] [Indexed: 12/04/2022]
Abstract
This article presents the results of experimental studies of the impact of electrode material and the effect of nanoscale film thickness on the resistive switching in forming-free nanocrystalline ZnO films grown by pulsed laser deposition. It was demonstrated that the nanocrystalline ZnO film with TiN, Pt, ZnO:In, and ZnO:Pd bottom electrodes exhibits a nonlinear bipolar effect of forming-free resistive switching. The sample with Pt showed the highest resistance values RHRS and RLRS and the highest value of Uset = 2.7 ± 0.4 V. The samples with the ZnO:In and ZnO:Pd bottom electrode showed the lowest Uset and Ures values. An increase in the number of laser pulses from 1000 to 5000 was shown to lead to an increase in the thickness of the nanocrystalline ZnO film from 7.2 ± 2.5 nm to 53.6 ± 18.3 nm. The dependence of electrophysical parameters (electron concentration, electron mobility, and resistivity) on the thickness of the forming-free nanocrystalline ZnO film for the TiN/ZnO/W structure was investigated. The endurance test and homogeneity test for TiN/ZnO/W structures were performed. The structure Al2O3/TiN/ZnO/W with a nanocrystalline ZnO thickness 41.2 ± 9.7 nm was shown to be preferable for the manufacture of ReRAM and memristive neuromorphic systems due to the highest value of RHRS/RLRS = 2307.8 ± 166.4 and low values of Uset = 1.9 ± 0.2 V and Ures = -1.3 ± 0.5 V. It was demonstrated that the use of the TiN top electrode in the Al2O3/TiN/ZnO memristor structure allowed for the reduction in Uset and Ures and the increase in the RHRS/RLRS ratio. The results obtained can be used in the manufacturing of resistive-switching nanoscale devices for neuromorphic computing based on the forming-free nanocrystalline ZnO oxide films.
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Affiliation(s)
- Roman V. Tominov
- Department of Radioelectronics and Nanoelectronics, Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, Russia; (R.V.T.); (A.V.S.)
| | - Zakhar E. Vakulov
- Federal Research Centre the Southern Scientific Centre of the Russian Academy of Sciences, 344006 Rostov-on-Don, Russia;
| | - Nikita V. Polupanov
- Laboratory of Functional Nanomaterials Technology, Southern Federal University, 347922 Taganrog, Russia;
| | - Aleksandr V. Saenko
- Department of Radioelectronics and Nanoelectronics, Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, Russia; (R.V.T.); (A.V.S.)
| | - Vadim I. Avilov
- Department of Micro- and Nanoelectronics, Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, Russia; (V.I.A.); (O.A.A.)
| | - Oleg A. Ageev
- Department of Micro- and Nanoelectronics, Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, Russia; (V.I.A.); (O.A.A.)
| | - Vladimir A. Smirnov
- Department of Radioelectronics and Nanoelectronics, Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, Russia; (R.V.T.); (A.V.S.)
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Towards Scalable Large-Area Pulsed Laser Deposition. MATERIALS 2021; 14:ma14174854. [PMID: 34500943 PMCID: PMC8432691 DOI: 10.3390/ma14174854] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/22/2021] [Revised: 08/12/2021] [Accepted: 08/20/2021] [Indexed: 11/21/2022]
Abstract
One of the significant limitations of the pulsed laser deposition method in the mass-production-technologies of micro- and nanoelectronic and molecular device electronic fabrication is the issue of ensuring deposition of films with uniform thickness on substrates with large diameter (more than 100 mm) since the area of the laser spot (1–5 mm2) on the surface of the ablated target is incommensurably smaller than the substrate area. This paper reports the methodology that allows to calculate the distribution profile of the film thickness over the surface substrate with a large diameter, taking into account the construction and technological parameters of the pulsed laser deposition equipment. Experimental verification of the proposed methodology showed that the discrepancy with the experiment does not exceed 8%. The modeling of various technological parameters influence on the thickness uniformity has been carried out. Based on the modeling results, recommendations and parameters are proposed for manufacturing uniform thickness films. The results allow for increasing the film thickness uniformity with the thickness distribution < 5% accounts for ~ 31% of 300 mm diameter substrate.
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