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Yanchevskii O, V'yunov O, Plutenko T, Belous A, Trachevskii V, Matolínová I, Veltruská K, Kalinovych V, Lobko Y. Microstructure, chemical composition, and dielectric response of CaCu 3Ti 4O 12 ceramics doped with F, Al, and Mg ions. Heliyon 2023; 9:e18523. [PMID: 37533983 PMCID: PMC10392100 DOI: 10.1016/j.heliyon.2023.e18523] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2023] [Revised: 07/18/2023] [Accepted: 07/20/2023] [Indexed: 08/04/2023] Open
Abstract
Ceramics with nominal chemical composition CaCu3Ti4O12 (CCTO), CaCu3Ti3.96Al0.04O11.96F0.04 (CCTOAF), and Ca0.98Mg0.08Cu2.94Ti3.96Al0.04O11.96F0.04 (CCTOMAF) were prepared by the solid-state reactions technique. Using SEM, EDX, XPS, EPR, NMR, and complex impedance spectroscopy, the microstructure, elements distribution, chemical composition of grains and grain boundaries, and the dielectric response of ceramics were investigated. In the ССТО, CCTOAF, and CCTOMAF series, the average grain size increases, the degree of copper segregation at the grain boundaries is inversely related to grain size, and the dielectric loss decreases from 0.071 to 0.047 and 0.030, respectively, while dielectric permittivity ε' at 1 kHz is 5.6 × 104, 7.1 × 104, and 4.3 × 104, respectively. Additives of Al, Mg, F and milled particles (ZrO2, Al2O3, and SiO2) can either partially introduce into the perovskite structure or form low-melting eutectics at the grain boundaries, causing abnormal grain growth. The presence of copper ions in various oxidation states, as well as evidence of exchange spin interactions between them, was confirmed in all samples.
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Affiliation(s)
- O.Z. Yanchevskii
- Dept. Solid State Chemistry, V. I. Vernadsky Institute of General and Inorganic Chemistry of the National Academy of Science of Ukraine, Acad. Palladin Ave. 32/34, 03142, Kyiv, Ukraine
| | - O.I. V'yunov
- Dept. Solid State Chemistry, V. I. Vernadsky Institute of General and Inorganic Chemistry of the National Academy of Science of Ukraine, Acad. Palladin Ave. 32/34, 03142, Kyiv, Ukraine
| | - T.O. Plutenko
- Dept. Solid State Chemistry, V. I. Vernadsky Institute of General and Inorganic Chemistry of the National Academy of Science of Ukraine, Acad. Palladin Ave. 32/34, 03142, Kyiv, Ukraine
| | - A.G. Belous
- Dept. Solid State Chemistry, V. I. Vernadsky Institute of General and Inorganic Chemistry of the National Academy of Science of Ukraine, Acad. Palladin Ave. 32/34, 03142, Kyiv, Ukraine
| | - V.V. Trachevskii
- G.V. Kurdyumov Institute of Metal Physics of the National Academy of Science of Ukraine, Acad. Vernadskii Ave. 36, 03680, Kyiv, Ukraine
| | - I. Matolínová
- Dept. Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 180 00, Prague, Czech Republic
| | - K. Veltruská
- Dept. Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 180 00, Prague, Czech Republic
| | - V. Kalinovych
- Dept. Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 180 00, Prague, Czech Republic
| | - Ye Lobko
- Dept. Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 180 00, Prague, Czech Republic
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Lee S, Kim HH, Seo J, Jang BC, Yoo H. Disordered Mixture of Self-Assembled Molecular Functional Groups on Heterointerfaces with p-Si Leads to Multiple Key Generation in Physical Unclonable Functions. ACS APPLIED MATERIALS & INTERFACES 2023; 15:1693-1703. [PMID: 36512688 DOI: 10.1021/acsami.2c18740] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Physical unclonable function (PUF) security devices based on hardware are becoming an effective strategy to overcome the dependency of the internet cloud and software-based hacking vulnerabilities. On the other hand, existing Si-based artificial security devices have several issues, including the absence of a method for multiple key generation, complex and expensive fabrication processes, and easy prediction compared to devices retaining natural randomness. Herein, to generate unique and unpredictable multiple security keys, this paper proposes novel PUF devices consisting of a disordered random mixture of two self-assembled monolayers (SAMs) formed onto p-type Si. The proposed PUF devices exhibited multikeys at different voltage biasing, including 0 V, through the arbitrary dipole effect. As a result, multiple unpredictable hardware security keys were generated from one device using a simple solution-coating process. The PUF security device based on the mixture of materials with different dipoles developed in this study can provide valuable insights for implementing various PUF devices in the future.
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Affiliation(s)
- Subin Lee
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam13120, Republic of Korea
| | - Hyun Ho Kim
- Department of Energy Engineering Convergence & School of Materials Science and Engineering, Kumoh National Institute of Technology, 61 Daehakro, Gumi39177, Republic of Korea
| | - Juhyung Seo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam13120, Republic of Korea
| | - Byung Chul Jang
- School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu41566, Republic of Korea
- School of Electronics Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu41566, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam13120, Republic of Korea
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