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Liang R, Zhu L, Liu H, Ye M, Shu L, Zheng R, Ke S. Domain Matching Strategy for Orientation Control of van der Waals Epitaxial Perovskite Thin Films. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37436879 DOI: 10.1021/acsami.3c05402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/14/2023]
Abstract
The advantages of van der Waals epitaxy have attracted great interest because they can meet the requirements that conventional epitaxy struggles to satisfy. The weak adatom-substrate interaction without directional covalent bonding drastically relaxes the lattice matching limitation. However, the weak adatom-substrate interaction also leads to ineffectiveness in directing the crystal growth structure, limiting it to one orientation in epitaxial growth. In this work, we propose a domain matching strategy to guide the perovskite-type crystal epitaxial growth on 2D substrates, and we have demonstrated selective deposition of highly (001)-, (110)-, and (111)-oriented epitaxial Fe4N thin films on mica substrates using applicable transition structure design. Our work makes it possible to achieve and control different orientations of van der Waals epitaxy on the same substrate.
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Affiliation(s)
- Renhong Liang
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, PR China
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, PR China
| | - Liwen Zhu
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, PR China
| | - Hua Liu
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, PR China
| | - Mao Ye
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, PR China
| | - Longlong Shu
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, PR China
| | - Renkui Zheng
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, PR China
| | - Shanming Ke
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, PR China
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Maruvada A, Shubhakar K, Raghavan N, Pey KL, O'Shea SJ. Dielectric breakdown of 2D muscovite mica. Sci Rep 2022; 12:14076. [PMID: 35982110 PMCID: PMC9388672 DOI: 10.1038/s41598-022-18320-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/08/2022] [Accepted: 08/09/2022] [Indexed: 11/09/2022] Open
Abstract
Localized electrical breakdown (BD) measurements are performed on 2D muscovite mica flakes of ~ 2 to 15 nm thickness using Conduction Atomic Force Microscopy (CAFM). To obtain robust BD data by CAFM, the probed locations are spaced sufficiently far apart (> 1 µm) to avoid mutual interference and the maximum current is set to a low value (< 1 nA) to ensure severe damage does not occur to the sample. The analyses reveals that 2D muscovite mica has high electrical breakdown strength (12 MV/cm or more) and low leakage current, comparable to 2D hexagonal boron nitride (h-BN) of similar thickness. However, a significant difference compared to h-BN is the very low current necessary to avoid catastrophic damage during the BD event, even for very thin (2-3 nm) flakes. Further, for mica the BD transient always appear to be very abrupt, and no progressive BD process was definitively observed. These marked differences between mica and h-BN are attributed to the poor thermal conductivity of mica.
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Affiliation(s)
- Anirudh Maruvada
- Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore, 487372, Singapore
| | - Kalya Shubhakar
- Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore, 487372, Singapore
| | - Nagarajan Raghavan
- Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore, 487372, Singapore
| | - Kin Leong Pey
- Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore, 487372, Singapore
| | - Sean J O'Shea
- Institute of Materials Research and Engineering, Agency for Science Technology and Research, 2 Fusionopolis Way, Singapore, 138634, Singapore.
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Tao L, Yao B, Yue Q, Dan Z, Wen P, Yang M, Zheng Z, Luo D, Fan W, Wang X, Gao W. Vertically stacked Bi 2Se 3/MoTe 2 heterostructure with large band offsets for nanoelectronics. NANOSCALE 2021; 13:15403-15414. [PMID: 34499063 DOI: 10.1039/d1nr04281e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In recent years, two-dimensional material-based tunneling heterojunctions are emerging as a multi-functional architecture for logic circuits and photodetection owing to the flexible stacking, optical sensitivity, tunable detection band, and highly controllable conductivity behaviors. However, the existing structures are mainly focused on transition or post-transition metal chalcogenides and have been rarely investigated as topological insulator (such as Bi2Se3 or Bi2Te3)-based tunneling heterostructures. Meanwhile, it is challenging to mechanically exfoliate the topological insulator thin nanoflakes because of the strong layer-by-layer interaction with shorter interlayer spacing. Herein, we report Au-assisted exfoliation and non-destructive transfer method to fabricate large-scale Bi2Se3 thin nanosheets. Furthermore, a novel broken-gap tunneling heterostructure is designed by combing 2H-MoTe2 and Bi2Se3via the dry-transfer method. Thanks to the realized band alignment, this ambipolar-n device shows a clear rectifying behavior at Vds of 1 V. A built-in potential exceeding ∼0.7 eV is verified owing to the large band offsets by comparing the numerical solution of Poisson's equation and the experimental data. Carrier transport is governed by the majority carrier including thermionic emission and the tunneling process through the barrier height. At last, the device shows an ultralow dark current of ∼0.2 pA and a superior optoelectrical performance of Ilight/Idark ratio ≈106, a fast response time of 21 ms, and a specific detectivity of 7.2 × 1011 Jones for a visible light of 405 nm under zero-bias. Our work demonstrates a new universal method to fabricate a topological insulator and paves a new strategy for the construction of novel van der Waals tunneling structures.
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Affiliation(s)
- Lin Tao
- State Key Lab of Superhard Material, and College of Physics, Jilin University, Changchun 130012, P. R. China.
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun, 130012, P. R. China
| | - Bin Yao
- State Key Lab of Superhard Material, and College of Physics, Jilin University, Changchun 130012, P. R. China.
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun, 130012, P. R. China
| | - Qian Yue
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
| | - Zhiying Dan
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
| | - Peiting Wen
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
| | - Mengmeng Yang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Dongxiang Luo
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
| | - Weijun Fan
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Xiaozhou Wang
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
| | - Wei Gao
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
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Photoactive Nanomaterials. NANOMATERIALS 2021; 11:nano11010077. [PMID: 33401445 PMCID: PMC7824164 DOI: 10.3390/nano11010077] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Download PDF] [Subscribe] [Scholar Register] [Received: 12/25/2020] [Accepted: 12/29/2020] [Indexed: 12/05/2022]
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