Dependence of Photoresponsivity and On/Off Ratio on Quantum Dot Density in Quantum Dot Sensitized MoS2 Photodetector

Direct Synthesis of MoS2 Nanosheets in Reduced Graphene Oxide Nanoscroll for Enhanced Photodetection

Due to their unique tubular and spiral structure, graphene and graphene oxide nanoscrolls (GONS) have shown extensive applications in various fields. However, it is still a challenge to improve the optoelectronic application of graphene and GONS because of the zero bandgap of graphene. Herein, ammonium tetrathiomolybdate ((NH₄)₂MoS₄) was firstly wrapped into the ((NH₄)₂MoS₄@GONS) by molecular combing the mixture of (NH₄)₂MoS₄ and GO solution on hydrophobic substrate. After thermal annealing, the (NH₄)₂MoS₄ and GO were converted to MoS₂ nanosheets and reduced GO (RGO) simultaneously, and, thus, the MoS₂@RGONS was obtained. Raman spectroscopy and high-resolution transmission electron microscopy were used to confirm the formation of MoS₂ nanosheets among the RGONS. The amount of MoS₂ wrapped in RGONS increased with the increasing height of GONS, which is confirmed by the atomic force microscopy and Raman spectroscopy. The as-prepared MoS₂@RGONS showed much better photoresponse than the RGONS under visible light. The photocurrent-to-dark current ratios of photodetectors based on MoS₂@RGONS are ~570, 360 and 140 under blue, red and green lasers, respectively, which are 81, 144 and 35 times of the photodetectors based on RGONS. Moreover, the MoS₂@RGONS-based photodetector exhibited good power-dependent photoresponse. Our work indicates that the MoS₂@RGONS is expected to be a promising material in the fields of optoelectronic devices and flexible electronics.

Hybrid structure of PbS QDs and vertically-few-layer MoS2 nanosheets array for broadband photodetector

A novel three-dimensional (3D) vertically-few-layer MoS2 (V-MoS2) nanosheets- zero-dimensional PbS quantum dots (QDs) hybrid structure based broadband photodetector was fabricated, and its photoelectric performance was investigated in detail. We synthesized the V-MoS2 nanosheets by chemical vapor deposition, using the TiO2 layer as the induced layer, and proposed a possible growth mechanism. The use of the TiO2 induction layer successfully changed the growth direction of MoS2 from parallel to vertical. The prepared V-MoS2 nanosheets have a large specific surface area, abundantly exposed edges and excellent light absorption capacity. The V-MoS2 nanosheets detector was then fabricated and investigated, which exhibits a high sensitivity for 635 nm light, a fast response time and an excellent photoelectric response. The V-MoS2 nanosheets with a height of approximately 1 μm successfully broke the light absorption limit caused by the atomic thickness. Finally, we fabricated the PbS QDs/V-MoS2 nanosheets hybrid detector and demonstrated their potential for high-performance broadband photodetectors. The response wavelength of the hybrid detector extends from the visible band to the near-infrared band. The responsivity of the hybrid detector reaches 1.46 A W-1 under 1450 nm illumination. The combination of 3D MoS2 nanosheets and QDs further improves the performance of MoS2-based photodetector devices. We believe that the proposed zero-dimensional QDs and 3D vertical nanosheets hybrid structure broadband photodetector provides a promising way for the next-generation optoelectronic devices.