Formation of Periodic Nanoridge Patterns by Ultrashort Single Pulse UV Laser Irradiation of Gold

Molecular Dynamics Modeling of Pulsed Laser Fragmentation of Solid and Porous Si Nanoparticles in Liquid Media

The production of non-toxic and homogeneous colloidal solutions of nanoparticles (NPs) for biomedical applications is of extreme importance nowadays. Among the various methods for generation of NPs, pulsed laser ablation in liquids (PLAL) has proven itself as a powerful and efficient tool in biomedical fields, allowing chemically pure silicon nanoparticles to be obtained. For example, laser-synthesized silicon nanoparticles (Si NPs) are widely used as contrast agents for bio visualization, as effective sensitizers of radiofrequency hyperthermia for cancer theranostics, in photodynamic therapy, as carriers of therapeutic radionuclides in nuclear nanomedicine, etc. Due to a number of complex and interrelated processes involved in the laser ablation phenomenon, however, the final characteristics of the resulting particles are difficult to control, and the obtained colloidal solutions frequently have broad and multimodal size distribution. Therefore, the subsequent fragmentation of the obtained NPs in the colloidal solutions due to pulsed laser irradiation can be utilized. The resulting NPs' characteristics, however, depend on the parameters of laser irradiation as well as on the irradiated material and surrounding media properties. Thus, reliable knowledge of the mechanism of NP fragmentation is necessary for generation of a colloidal solution with NPs of predesigned properties. To investigate the mechanism of a laser-assisted NP fragmentation process, in this work, we perform a large-scale molecular dynamics (MD) modeling of FS laser interaction with colloidal solution of Si NPs. The obtained NPs are then characterized by their shape and morphological properties. The corresponding conclusion about the relative input of the properties of different laser-induced processes and materials to the mechanism of NP generation is drawn.

High-Resolution Laser Interference Ablation and Amorphization of Silicon

The laser interference patterning of a silicon surface via UV femtosecond pulse irradiation, resulting in 350 nm periodic structures, is demonstrated. The structuring process was performed using a laser with a 450 fs pulse duration at a wavelength of 248 nm in combination with a mask projection setup. Depending on the laser fluence, single-pulse irradiation leads to amorphization, structure formation via lateral melt flow or the formation of voids via peculiar melt coalescence. Through multipulse irradiation, combined patterns of interference structures and laser-induced periodic surface structures (LIPSS) are observed.

Fermi-Level Tuning of G-Doped Layers

Recently, geometry-induced quantum effects were observed in periodic nanostructures. Nanograting (NG) geometry significantly affects the electronic, magnetic, and optical properties of semiconductor layers. Silicon NG layers exhibit geometry-induced doping. In this study, G-doped junctions were fabricated and characterized and the Fermi-level tuning of the G-doped layers by changing the NG depth was investigated. Samples with various indent depths were fabricated using laser interference lithography and a consecutive series of reactive ion etching. Four adjacent areas with NG depths of 10, 20, 30, and 40 nm were prepared on the same chip. A Kelvin probe was used to map the work function and determine the Fermi level of the samples. The G-doping-induced Fermi-level increase was recorded for eight sample sets cut separately from p-, n-, p⁺-, and n⁺-type silicon substrates. The maximum increase in the Fermi level was observed at a10 nm depth, and this decreased with increasing indent depth in the p- and n-type substrates. Particularly, this reduction was more pronounced in the p-type substrates. However, the Fermi-level increase in the n⁺- and p⁺-type substrates was negligible. The obtained results are explained using the G-doping theory and G-doped layer formation mechanism introduced in previous works.

Laser Thermochemical High-Contrast Recording on Thin Metal Films

Laser-induced thermochemical recording of nano- and microsized structures on thin films has attracted intense interest over the last few decades due to essential applications in the photonics industry. Nevertheless, the relationship between the laser parameters and the properties of the formed oxide structures, both geometrical and optical, is still implicit. In this work, direct laser interference patterning of the titanium (Ti) film in the oxidative regime was applied to form submicron periodical structures. Depending on the number of laser pulses, the regime of high contrast structures recording was observed with the maximum achievable thickness of the oxide layer. The investigation revealed high transmittance of the formed oxide layers, i.e., the contrast of recorded structures reached up to 90% in the visible range. To analyze the experimental results obtained, a theoretical model was developed based on calculations of the oxide formation dynamics. The model operates on Wagner oxidation law and the corresponding optical properties of the oxide–metal–glass substrate system changing nonlinearly after each pulse. A good agreement of the experimental results with the modeling estimations allowed us to extend the model application to other metals, specifically to those with optically transparent oxides, such as zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), and tantalum (Ta). The performed analysis highlighted the importance of choosing the correct laser parameters due to the complexity and nonlinearity of optical, thermal, and chemical processes in the metal film during its laser-induced oxidation in the air. The developed model allowed selecting the suitable temporal–energetic regimes and predicting the optical characteristics of the structures formed with an accuracy of 10%. The results are promising in terms of their implementation in the photonics industry for the production of optical converters.