High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures

Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications

GaN is an important III-V semiconductor for a variety of applications owing to its large direct band gap. GaN nanowires (NWs) have demonstrated significant potential as critical building blocks for nanoelectronics and nanophotonic devices, as well as integrated nanosystems. We present a comprehensive analysis of the vapor-liquid-solid (VLS) as a general synthesis technique for NWs on a variety of substrates, the morphological and structural characterization, and applications of GaN NWs in piezoelectric nanogenerators, light-emitting diodes, and solar-driven water splitting. We begin by summarizing the overall VLS growth process of GaN NWs, followed by the growth of NWs on several substrates. Subsequently, we review the various uses of GaN NWs in depth.

Special Issue "ALD Technique for Functional Coatings of Nanostructured Materials"

Atomic layer deposition (ALD) is a vapor-phase technique that consists of the alternation of separated self-limiting surface reactions, which enable film thickness to be accurately controlled at the angstrom level, based on the former atomic layer epitaxy method [...].

Length dependence thermal conductivity of zinc selenide (ZnSe) and zinc telluride (ZnTe) – a combined first principles and frequency domain thermoreflectance (FDTR) study

The length dependence thermal conductivity of isotopically disordered ZnSe and ZnTe is reported.