Nanopatterning of Weak Links in Superconducting Oxide Interfaces

Nanopatterning of oxide 2-dimensional electron systems using low-temperature ion milling

We present a 'top-down' patterning technique based on ion milling performed at low-temperature, for the realization of oxide two-dimensional electron system devices with dimensions down to 160 nm. Using electrical transport and scanning Superconducting QUantum Interference Device measurements we demonstrate that the low-temperature ion milling process does not damage the 2DES properties nor creates oxygen vacancies-related conducting paths in the STO substrate. As opposed to other procedures used to realize oxide 2DES devices, the one we propose gives lateral access to the 2DES along the in-plane directions, finally opening the way to coupling with other materials, including superconductors.

Superconducting Properties and Electron Scattering Mechanisms in a Nb Film with a Single Weak-Link Excavated by Focused Ion Beam

Granularity is one of the main features restricting the maximum current which a superconductor can carry without losses, persisting as an important research topic when applications are concerned. To directly observe its effects on a typical thin superconducting specimen, we have modeled the simplest possible granular system by fabricating a single artificial weak-link in the center of a high-quality Nb film using the focused ion beam technique. Then, its microstructural, magnetic, and electric properties in both normal and superconducting states were studied. AC susceptibility, DC magnetization, and magneto-transport measurements reveal well-known granularity signatures and how they negatively affect superconductivity. Moreover, we also investigate the normal state electron scattering mechanisms in the Boltzmann theory framework. The results clearly demonstrate the effect of the milling technique, giving rise to an additional quadratic-in-temperature contribution to the usual cubic-in-temperature sd band scattering for the Nb film. Finally, by analyzing samples with varying density of incorporated defects, the emergence of the additional contribution is correlated to a decrease in their critical temperature, in agreement with recent theoretical results.