Desai DV, Yang J, Lee HH. Characteristics of Synaptic Function of Mesoporous Silica-Titania and Mesoporous Titania Lateral Electrode Devices.
NANOMATERIALS (BASEL, SWITZERLAND) 2023;
13:nano13111734. [PMID:
37299637 DOI:
10.3390/nano13111734]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Revised: 05/23/2023] [Accepted: 05/23/2023] [Indexed: 06/12/2023]
Abstract
In this paper, we have fabricated non-volatile memory resistive switching (RS) devices and analyzed analog memristive characteristics using lateral electrodes with mesoporous silica-titania (meso-ST) and mesoporous titania (meso-T) layers. For the planar-type device having two parallel electrodes, current-voltage (I-V) curves and pulse-driven current changes could reveal successful long-term potentiation (LTP) along with long-term depression (LTD), respectively, by the RS active mesoporous two layers for 20~100 μm length. Through mechanism characterization using chemical analysis, non-filamental memristive behavior unlike the conventional metal electroforming was identified. Additionally, high performance of the synaptic operations could be also accomplished such that a high current of 10-6 Amp level could occur despite a wide electrode spacing and short pulse spike biases under ambient condition with moderate humidity (RH 30~50%). Moreover, it was confirmed that rectifying characteristics were observed during the I-V measurement, which was a representative feature of dual functionality of selection diode and the analog RS device for both meso-ST and meso-T devices. The memristive and synaptic functions along with the rectification property could facilitate a chance of potential implementation of the meso-ST and meso-T devices to neuromorphic electronics platform.
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