Fermi-Level Tuning of G-Doped Layers

Modified 3D Graphene for Sensing and Electrochemical Capacitor Applications

Less defective, nitrogen-doped 3-dimensional graphene (N3DG) and defect-rich, nitrogen-doped 3-dimensional graphene (N3DG-D) were made by the thermal CVD (Chemical Vapor Deposition) process via varying the carbon precursors and synthesis temperature. These modified 3D graphene materials were compared with pristine 3-dimensional graphene (P3DG), which has fewer defects and no nitrogen in its structure. The different types of graphene obtained were characterized for morphological, structural, and compositional assessment through Scanning Electron Microscopy (SEM), Raman Spectroscopy, and X-ray Photoelectron Spectroscopy (XPS) techniques. Electrodes were fabricated, and electrochemical characterizations were conducted to evaluate the suitability of the three types of graphene for heavy metal sensing (lead) and Electric Double-Layer Capacitor (EDLC) applications. Initially, the various electrodes were treated with a mixture of 2.5 mM Ruhex (Ru (NH3)6Cl3 and 25 mM KCl to confirm that all the electrodes underwent a reversible and diffusion-controlled electrochemical process. Defect-rich graphene (N3DG-D) revealed the highest current density, followed by pristine (P3DG) and less-defect graphene (N3DG). Further, the three types of graphene were subjected to a sensing test by square wave anodic stripping voltammetry (SWASV) for lead detection. The obtained preliminary results showed that the N3DG material provided a great lead-sensing capability, detecting as little as 1 µM of lead in a water solution. The suitability of the electrodes to be employed in an Electric Double-Layer Capacitor (EDLC) was also comparatively assessed. Electrochemical characterization using 1 M sodium sulfate electrolyte was conducted through cyclic voltammetry and galvanostatic charge-discharge studies. The voltammogram and the galvanostatic charge-discharge (GCD) curves of the three types of graphene confirmed their suitability to be used as EDLC. The N3DG electrode proved superior with a gravimetric capacitance of 6.1 mF/g, followed by P3DG and N3DG, exhibiting 1.74 mF/g and 0.32 mF/g, respectively, at a current density of 2 A/g.

Fabrication of near-invisible solar cell with monolayer WS2

Herein, we developed a near-invisible solar cell through a precise control of the contact barrier between an indium tin oxide (ITO) electrode and a monolayer tungsten disulfide (WS₂), grown by chemical vapor deposition (CVD). The contact barrier between WS₂ and ITO was controlled by coating various thin metals on top of ITO (M_x/ITO) and inserting a thin layer of WO₃ between M_x/ITO and the monolayer WS₂, which resulted in a drastic increase in the Schottky barrier height (up to 220 meV); this could increase the efficiency of the charge carrier separation in our Schottky-type solar cell. The power conversion efficiency (PCE) of the solar cell with the optimized electrode (WO₃/M_x/ITO) was more than 1000 times that of a device using a normal ITO electrode. Large-scale fabrication of the solar cell was also investigated, which revealed that a simple size expansion with large WS₂ crystals and parallel long electrodes could not improve the total power (P_T) obtained from the complete device even with an increase in the device area; this can be explained by the percolation theory. This problem was addressed by reducing the aspect ratio (width/channel length) of the unit device structure to a value lower than a critical threshold. By repeating the experiments on this optimized unit device with an appropriate number of series and parallel connections, P_T could be increased up to 420 pW from a 1-cm² solar cell with a very high value (79%) of average visible transmission (AVT).

Design for Ultrahigh-Density Vertical Phase Change Memory: Proposal and Numerical Investigation

The integration level is a significant index that can be used to characterize the performance of non-volatile memory devices. This paper proposes innovative design schemes for high-density integrated phase change memory (PCM). In these schemes, diploid and four-fold memory units, which are composed of nano-strip film GST-based memory cells, are employed to replace the memory unit of a conventional vertical PCM array. As the phase transformation process of the phase change material involves the coupling of electrical and thermal processes, an in-house electrothermal coupling simulator is developed to analyze the performance of the proposed memory cells and arrays. In the simulator, a proven mathematical model is used to describe the phase change mechanism, with a finite element approach implemented for numerical calculations. The characteristics of the GST-strip-based memory cell are simulated first and compared with a conventional vertical cell, with a decrease of 32% in the reset current amplitude achieved. Next, the influences of geometric parameters on the characteristics of memory cell are investigated systematically. After this, the electrothermal characteristics of the proposed vertical PCM arrays are simulated and the results indicate that they possess both excellent performance and scalability. At last, the integration densities of the proposed design schemes are compared with the reference array, with a maximum time of 5.94 achieved.

Studies on Electron Escape Condition in Semiconductor Nanomaterials via Photodeposition Reaction

In semiconductor material-driven photocatalysis systems, the generation and migration of charge carriers are core research contents. Among these, the separation of electron-hole pairs and the transfer of electrons to a material’s surface played a crucial role. In this work, photodeposition, a photocatalysis reaction, was used as a “tool” to point out the electron escaping sites on a material’s surface. This “tool” could be used to visually indicate the active particles in photocatalyst materials. Photoproduced electrons need to be transferred to the surface, and they will only participate in reactions at the surface. By reacting with escaped electrons, metal ions could be reduced to nanoparticles immediately and deposited at electron come-out sites. Based on this, the electron escaping conditions of photocatalyst materials have been investigated and surveyed through the photodeposition of platinum. Our results indicate that, first, in monodispersed nanocrystal materials, platinum nanoparticles deposited randomly on a particle’s surface. This can be attributed to the abundant surface defects, which provide driving forces for electron escaping. Second, platinum nanoparticles were found to be deposited, preferentially, on one side in heterostructured nanocrystals. This is considered to be a combination result of work function difference and existence of heterojunction structure.

LIPSS Applied to Wide Bandgap Semiconductors and Dielectrics: Assessment and Future Perspectives

With the aim of presenting the processes governing the Laser-Induced Periodic Surface Structures (LIPSS), its main theoretical models have been reported. More emphasis is given to those suitable for clarifying the experimental structures observed on the surface of wide bandgap semiconductors (WBS) and dielectric materials. The role played by radiation surface electromagnetic waves as well as Surface Plasmon Polaritons in determining both Low and High Spatial Frequency LIPSS is briefly discussed, together with some experimental evidence. Non-conventional techniques for LIPSS formation are concisely introduced to point out the high technical possibility of enhancing the homogeneity of surface structures as well as tuning the electronic properties driven by point defects induced in WBS. Among these, double- or multiple-fs-pulse irradiations are shown to be suitable for providing further insight into the LIPSS process together with fine control on the formed surface structures. Modifications occurring by LIPSS on surfaces of WBS and dielectrics display high potentialities for their cross-cutting technological features and wide applications in which the main surface and electronic properties can be engineered. By these assessments, the employment of such nanostructured materials in innovative devices could be envisaged.

Optimization of Antireflection Coating Design Using PC1D Simulation for c − Si Solar Cell Application

Minimizing the photon losses by depositing an anti-reflection layer can increase the conversion efficiency of the solar cells. In this paper, the impact of anti-reflection coating (ARC) for enhancing the efficiency of silicon solar cells is presented. Initially, the refractive indices and reflectance of various ARC materials were computed numerically using the OPAL2 calculator. After which, the reflectance of SiO2,TiO2,SiNx with different refractive indices (n) were used for analyzing the performance of a silicon solar cells coated with these materials using PC1D simulator. SiNx and TiO2 as single-layer anti-reflection coating (SLARC) yielded a short circuit current density (Jsc) of 38.4 mA/cm2 and 38.09mA/cm2 respectively. Highest efficiency of 20.7% was obtained for the SiNx ARC layer with n=2.15. With Double-layer anti-reflection coating (DLARC), the Jsc improved by ∼0.5 mA/cm2 for SiO2/SiNx layer and hence the efficiency by 0.3%. Blue loss reduces significantly for the DLARC compared with SLARC and hence increase in Jsc by 1 mA/cm2 is observed. The Jsc values obtained is in good agreement with the reflectance values of the ARC layers. The solar cell with DLARC obtained from the study showed that improved conversion efficiency of 21.1% is obtained. Finally, it is essential to understand that the key parameters identified in this simulation study concerning the DLARC fabrication will make experimental validation faster and cheaper.

Comparative Simulations of Conductive Nitrides as Alternative Plasmonic Nanostructures for Solar Cells

Particle layers employing conductive transition metal nitrides have been proposed as possible alternative plasmonic materials for photovoltaic applications due to their reduced losses compared to metal nanostructures. We critically compare the potential photocurrent gain from an additional layer made of nanopillars of nitrides with other material classes obtained in an optimized c-Si baseline solar cell, considering an experimental doping profile. A relative photocurrent gain enhancement of on average 5% to 10% is observed, achieving for a few scenarios around 30% gain. The local field enhancement is moderate around the resonances for nitrides which spread over the whole ultraviolet and visible range. We can characterize two types of nitrides: nitrides for which the shading effect remains a problem similar to for metals, and others which behave like dielectric scatterers with high photocurrent gain.