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Zhang C, Chen Y, Wang M, Guo L, Qin L, Yang Z, Wang C, Li X, Cao G. Photodetectors Based on MASnI 3/MoS 2 Hybrid-Dimensional Heterojunction Transistors: Breaking the Responsivity-Speed Trade-Off. ACS NANO 2024; 18:19303-19313. [PMID: 38976792 DOI: 10.1021/acsnano.4c05329] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/10/2024]
Abstract
Hybrid-dimensional heterojunction transistor (HDHT) photodetectors (PDs) have achieved high responsivities but unfortunately are still with unacceptably slow response speeds. Here, we propose a MASnI3/MoS2 HDHT PD, which exhibits the possibility to obtain high responsivity and fast response simultaneously. By exploring the detailed photoelectric responses utilizing a precise optoelectronic coupling simulation, the electrical performance of the device is optimally manipulated and the underlying physical mechanisms are carefully clarified. Particularly, the influence and modulation characteristics of the trap effects on the carrier dynamics of the PDs are investigated. We find that the localized trap effect in perovskite, especially at its top surface, is primarily responsible for the high responsivity and long response time; moreover, it is normally hard to break such a responsivity-speed trade-off due to the inherent limitation of the trap effect. By synergistically coupling the photogating effect, trap effect, and gate regulation, we indicate that it is possible to achieve an enhancement of the responsivity-bandwidth product by about 3 orders of magnitude. This study facilitates a fine modulation of the responsivity-speed relationship of hybrid-dimensional PDs, enabling breaking the traditional responsivity-speed trade-off of many PDs.
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Affiliation(s)
- Chengzhuang Zhang
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, China
| | - Yijing Chen
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, China
| | - Meng Wang
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, China
| | - Liliang Guo
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, China
| | - Linling Qin
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, China
| | - Zhenhai Yang
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, China
| | - Changlei Wang
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, China
| | - Xiaofeng Li
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, China
| | - Guoyang Cao
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, China
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Sim J, Ryoo S, Kim JS, Jang J, Ahn H, Kim D, Jung J, Kong T, Choi H, Lee YS, Lee TW, Cho K, Kang K, Lee T. Enhanced Photodetection Performance of an In Situ Core/Shell Perovskite-MoS 2 Phototransistor. ACS NANO 2024; 18:16905-16913. [PMID: 38904449 DOI: 10.1021/acsnano.4c02775] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2024]
Abstract
While two-dimensional transition metal dichalcogenides (TMDCs)-based photodetectors offer prospects for high integration density and flexibility, their thinness poses a challenge regarding low light absorption, impacting photodetection sensitivity. Although the integration of TMDCs with metal halide perovskite nanocrystals (PNCs) has been known to be promising for photodetection with a high absorption coefficient of PNCs, the low charge mobility of PNCs delays efficient photocarrier injection into TMDCs. In this study, we integrated MoS2 with in situ formed core/shell PNCs with short ligands that minimize surface defects and enhance photocarrier injection. The PNCs/MoS2 heterostructure efficiently separates electrons and holes by establishing type II band alignment and consequently inducing a photogating effect. The synergistic interplay between photoconductive and photogating effects yields a high responsivity of 2.2 × 106 A/W and a specific detectivity of 9.0 × 1011 Jones. Our findings offer a promising pathway for developing low-cost, high-performance phototransistors leveraging the advantages of two-dimensional (2D) materials.
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Affiliation(s)
- Jinwoo Sim
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Sunggyu Ryoo
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Joo Sung Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
- SN DISPLAY Co., Ltd., Seoul 08826, Korea
| | - Juntae Jang
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Heebeom Ahn
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Donguk Kim
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Joonha Jung
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Taehyun Kong
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Hyeonmin Choi
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Yun Seog Lee
- Department of Mechanical Engineering, Seoul National University, Seoul 08826, Korea
| | - Tae-Woo Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
- SN DISPLAY Co., Ltd., Seoul 08826, Korea
- Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Korea
- Institute of Engineering Research, Seoul National University, Seoul 08826, Korea
| | - Kyungjune Cho
- Convergence Research Center for Solutions to Electromagnetic Interference in Future-mobility, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Keehoon Kang
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
- Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Korea
- Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Takhee Lee
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
- Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
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Yang J, Yang Q, Zhang Y, Wei X, Shi H. Graphene nanowalls in photodetectors. RSC Adv 2023; 13:22838-22862. [PMID: 37520101 PMCID: PMC10375065 DOI: 10.1039/d3ra03104g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2023] [Accepted: 07/06/2023] [Indexed: 08/01/2023] Open
Abstract
Graphene nanowalls (GNWs) have emerged as a promising material in the field of photodetection, thanks to their exceptional optical, electrical, mechanical, and thermodynamic properties. However, the lack of a comprehensive review in this domain hinders the understanding of GNWs' development and potential applications. This review aims to provide a systematic summary and analysis of the current research status and challenges in GNW-based photodetectors. We begin by outlining the growth mechanisms and methods of GNWs, followed by a discussion on their physical properties. Next, we categorize and analyze the latest research progress in GNW photodetectors, focusing on photovoltaic, photoconductive, and photothermal detectors. Lastly, we offer a summary and outlook, identifying potential challenges and outlining industry development directions. This review serves as a valuable reference for researchers and industry professionals in understanding and exploring the opportunities of GNW materials in photodetection.
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Affiliation(s)
- Jun Yang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences Chongqing 400714 P. R. China
| | - Qi Yang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences Chongqing 400714 P. R. China
| | - Yongna Zhang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences Chongqing 400714 P. R. China
| | - Xingzhan Wei
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences Chongqing 400714 P. R. China
| | - Haofei Shi
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences Chongqing 400714 P. R. China
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