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The Growth of High-Quality Hexagonal GaTe Nanosheets Induced by ZnO Nanocrystals. CRYSTALS 2022. [DOI: 10.3390/cryst12050627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
The monoclinic and hexagonal gallium tellurides (m-GaTe and h-GaTe) show different applications in optoelectronic devices. Compared to the m-GaTe, the h-GaTe is a metastable phase, which generally exists in ultrathin samples and is difficult to obtain by direct chemical reaction. Herein, a hexagonal ZnO-induced crystal growth strategy was used for the design and fabrication of h-GaTe. The high-quality h-GaTe nanosheets were successfully grown on the (001) surface of hexagonal ZnO by the chemical vapor deposition method under ambient pressure. The SEM, XPS, XRD, and HRTEM characterizations uncovered a flower-like nanosheet morphology and a hexagonal crystal structure for the obtained GaTe samples. Meanwhile, the conductive atomic force microscope measurement indicates that the obtained h-GaTe nanosheet is a p-type semiconductor. Based on the electron localization function simulation, the lattice-induced crystal growth of h-GaTe was demonstrated. The results give an insight into the synthesis of metastable phase crystal and open an avenue for fabricating new two-dimensional devices by p-type h-GaTe.
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