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Bolshakov AD, Shishkin I, Machnev A, Petrov M, Kirilenko DA, Fedorov VV, Mukhin IS, Ginzburg P. Single GaP nanowire nonlinear characterization with the aid of an optical trap. NANOSCALE 2022; 14:993-1000. [PMID: 34989740 DOI: 10.1039/d1nr04790f] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Semiconductor nanowires exhibit numerous capabilities to advance the development of future optoelectronic devices. Among the III-V material family, gallium phosphide (GaP) is an attractive platform with low optical absorption and high nonlinear susceptibility, making it especially promising for nanophotonic applications. However, investigation of single nanostructures and their waveguiding properties remains challenging owing to typically planar experimental arrangements. Here we study the linear and nonlinear waveguiding optical properties of a single GaP nanowire in a special experimental layout, where an optically trapped structure is aligned along its major axis. We demonstrate efficient second harmonic generation in individual nanowires and unravel phase matching conditions, linking between linear guiding properties of the structure and its nonlinear tensorial susceptibility. The capability to pick up single nanowires, sort them with the aid of optomechanical manipulation and accurately position pre-tested structures opens a new avenue for the generation of optoelectronic origami-type devices.
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Affiliation(s)
- Alexey D Bolshakov
- Alferov University (formerly St Petersburg Academic University), 194021 St Petersburg, Russia.
- Centre for Photonics and Two-Dimensional Materials, Moscow Institute of Physics and Technology, 141701 Dolgoprudny, Russia
- ITMO University, 197101 St Petersburg, Russia
| | - Ivan Shishkin
- ITMO University, 197101 St Petersburg, Russia
- Department of Electrical Engineering Tel Aviv University Ramat Aviv, Tel Aviv 69978, Israel
| | - Andrey Machnev
- Department of Electrical Engineering Tel Aviv University Ramat Aviv, Tel Aviv 69978, Israel
| | | | - Demid A Kirilenko
- ITMO University, 197101 St Petersburg, Russia
- Ioffe Institute, Saint-Petersburg, 194021, Russia
| | - Vladimir V Fedorov
- Alferov University (formerly St Petersburg Academic University), 194021 St Petersburg, Russia.
- Peter the Great St Petersburg Polytechnic University, 195251, St.Petersburg, Russia
| | - Ivan S Mukhin
- Alferov University (formerly St Petersburg Academic University), 194021 St Petersburg, Russia.
- ITMO University, 197101 St Petersburg, Russia
- Peter the Great St Petersburg Polytechnic University, 195251, St.Petersburg, Russia
| | - Pavel Ginzburg
- Centre for Photonics and Two-Dimensional Materials, Moscow Institute of Physics and Technology, 141701 Dolgoprudny, Russia
- Department of Electrical Engineering Tel Aviv University Ramat Aviv, Tel Aviv 69978, Israel
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2
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Neplokh V, Fedorov V, Mozharov A, Kochetkov F, Shugurov K, Moiseev E, Amador-Mendez N, Statsenko T, Morozova S, Krasnikov D, Nasibulin AG, Islamova R, Cirlin G, Tchernycheva M, Mukhin I. Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes. NANOMATERIALS 2021; 11:nano11102549. [PMID: 34684990 PMCID: PMC8538214 DOI: 10.3390/nano11102549] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/20/2021] [Revised: 09/14/2021] [Accepted: 09/21/2021] [Indexed: 12/19/2022]
Abstract
We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involving single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays were grown by molecular beam epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films has the main electroluminescence line at 670 nm. Membrane-based light-emitting diodes (LEDs) were compared with GaPAs/GaP NW array LED devices processed directly on Si growth substrate revealing similar electroluminescence properties. Demonstrated membrane-based red LEDs are opening an avenue for flexible full color inorganic devices.
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Affiliation(s)
- Vladimir Neplokh
- High School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia; (V.F.); (I.M.)
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (A.M.); (F.K.); (K.S.); (E.M.); (G.C.)
- Correspondence:
| | - Vladimir Fedorov
- High School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia; (V.F.); (I.M.)
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (A.M.); (F.K.); (K.S.); (E.M.); (G.C.)
| | - Alexey Mozharov
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (A.M.); (F.K.); (K.S.); (E.M.); (G.C.)
| | - Fedor Kochetkov
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (A.M.); (F.K.); (K.S.); (E.M.); (G.C.)
| | - Konstantin Shugurov
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (A.M.); (F.K.); (K.S.); (E.M.); (G.C.)
| | - Eduard Moiseev
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (A.M.); (F.K.); (K.S.); (E.M.); (G.C.)
- Laboratory of Quantum Optoelectronics, National Research University Higher School of Economics, Kantemirovskaya 3A, 194100 St. Petersburg, Russia
| | - Nuño Amador-Mendez
- Centre of Nanosciences and Nanotechnologies, UMR 9001 CNRS, University Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France; (N.A.-M.); (M.T.)
| | - Tatiana Statsenko
- Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia; (T.S.); (S.M.)
- N.E. Bauman Moscow State Technical University, 2nd Baumanskaya str. 5/1, 105005 Moscow, Russia
| | - Sofia Morozova
- Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia; (T.S.); (S.M.)
- N.E. Bauman Moscow State Technical University, 2nd Baumanskaya str. 5/1, 105005 Moscow, Russia
| | - Dmitry Krasnikov
- Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30/1, 121205 Moscow, Russia; (D.K.); (A.G.N.)
| | - Albert G. Nasibulin
- Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30/1, 121205 Moscow, Russia; (D.K.); (A.G.N.)
- Department of Chemistry and Materials Science, Aalto University, FI-00076 Espoo, Finland
| | - Regina Islamova
- Institute of Chemistry, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia;
| | - George Cirlin
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (A.M.); (F.K.); (K.S.); (E.M.); (G.C.)
| | - Maria Tchernycheva
- Centre of Nanosciences and Nanotechnologies, UMR 9001 CNRS, University Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France; (N.A.-M.); (M.T.)
| | - Ivan Mukhin
- High School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia; (V.F.); (I.M.)
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (A.M.); (F.K.); (K.S.); (E.M.); (G.C.)
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3
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Fedorov VV, Dvoretckaia LN, Kirilenko DA, Mukhin IS, Dubrovskii VG. Formation of wurtzite sections in self-catalyzed GaP nanowires by droplet consumption. NANOTECHNOLOGY 2021; 32:495601. [PMID: 34433149 DOI: 10.1088/1361-6528/ac20fe] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2021] [Accepted: 08/25/2021] [Indexed: 06/13/2023]
Abstract
Wurtzite GaP nanowires are interesting for the direct bandgap engineering and can be used as templates for further growth of hexagonal Si shells. Most wurtzite GaP nanowires have previously been obtained with Au catalysts. Here, we show that long (∼500 nm) wurtzite sections are formed in the top parts of self-catalyzed GaP nanowires grown by molecular beam epitaxy on Si(111) substrates in the droplet consumption stage, which is achieved by abruptly increasing the atomic V/III flux ratio from 2 to 3. We investigate the temperature dependence of the length of wurtzite sections and show that the longest sections are obtained at 610 °C. A supporting model explains the observed trends using a phase diagram of GaP nanowires, where the wurtzite phase is formed within a certain range of the droplet contact angles. The optimal growth temperature for growing wurtzite nanowires corresponds to the largest diffusion length of Ga adatoms, which helps to maintain the required contact angle for the longest time.
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Affiliation(s)
- V V Fedorov
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
- Institute of Physics, Nanotechnology and Telecommunications, Peter the Great St. Petersburg Polytechnic University, Politekhnicheskaya 29, 195251 St. Petersburg, Russia
| | - L N Dvoretckaia
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - D A Kirilenko
- Ioffe Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
| | - I S Mukhin
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
- School of Photonics, ITMO University, Kronverksky Prospekt 49, 197101 St. Petersburg, Russia
| | - V G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034, St. Petersburg, Russia
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Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates. NANOMATERIALS 2021; 11:nano11081949. [PMID: 34443778 PMCID: PMC8400893 DOI: 10.3390/nano11081949] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/24/2021] [Revised: 07/14/2021] [Accepted: 07/26/2021] [Indexed: 12/16/2022]
Abstract
Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in single- or two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.
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