Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

Tailored Fabrication of 3D Nanopores Made of Dielectric Oxides for Multiple Nanoscale Applications

Solid-state nanopores are a key platform for single-molecule detection and analysis that allow engineering of their properties by controlling size, shape, and chemical functionalization. However, approaches relying on polymers have limits for what concerns hardness, robustness, durability, and refractive index. Nanopores made of oxides with high dielectric constant would overcome such limits and have the potential to extend the suitability of solid-state nanopores toward optoelectronic technologies. Here, we present a versatile method to fabricate three-dimensional nanopores made of different dielectric oxides with convex, straight, and concave shapes and demonstrate their functionality in a series of technologies and applications such as ionic nanochannels, ionic current rectification, memristors, and DNA sensing. Our experimental data are supported by numerical simulations that showcase the effect of different shapes and oxide materials. This approach toward robust and tunable solid-state nanopores can be extended to other 3D shapes and a variety of dielectrics.

Shear Bond Strength to Enamel, Mechanical Properties and Cellular Studies of Fiber-Reinforced Composites Modified by Depositing SiO2 Nanofilms on Quartz Fibers via Atomic Layer Deposition

Introduction

Poor interfacial bonding between the fibers and resin matrix in fiber-reinforced composites (FRCs) is a significant drawback of the composites. To enhance the mechanical properties of FRC, fibers were modified by depositing SiO2 nanofilms via the atomic layer deposition (ALD) technique. This study aims to evaluate the effect of ALD treatment of the fibers on the mechanical properties of the FRCs.

Methods

The quartz fibers were modified by depositing different cycles (50, 100, 200, and 400) of SiO2 nanofilms via the ALD technique and FRCs were proposed from the modified fibers. The morphologies, surface characterizations of nanofilms, mechanical properties, and cytocompatibility of FRCs were systematically investigated. Moreover, the shear bond strength (SBS) of FRCs to human enamel was also evaluated.

Results

The SEM and SE results showed that the ALD-deposited SiO2 nanofilms have good conformality and homogeneity. According to the results of FTIR and TGA, SiO2 nanofilms and quartz fiber surfaces had good chemical combinations. Three-point bending tests with FRCs showed that the deposited SiO2 nanofilms effectively improved FRCs' strength and Group D underwent 100 deposition cycles and had the highest flexural strength before and after aging. Furthermore, the strength of the FRCs demonstrated a crescendo-decrescendo tendency with SiO2 nanofilm thickness increasing. The SBS results also showed that Group D had outstanding performance. Moreover, the results of cytotoxicity experiments such as cck8, LDH and Elisa, etc., showed that the FRCs have good cytocompatibility.

Conclusion

Changing the number of ALD reaction cycles affects the mechanical properties of FRCs, which may be related to the stress relaxation and fracture between SiO2 nanofilm layers and the built-up internal stresses in the nanofilms. Eventually, the SiO2 nanofilms could enhance the FRCs' mechanical properties and performance to enamel by improving the interfacial bonding strength, and have good cytocompatibility.

Special Issue "ALD Technique for Functional Coatings of Nanostructured Materials"

Atomic layer deposition (ALD) is a vapor-phase technique that consists of the alternation of separated self-limiting surface reactions, which enable film thickness to be accurately controlled at the angstrom level, based on the former atomic layer epitaxy method [...].

Compact Ga2O3 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition at Low Temperature

Amorphous Gallium oxide (Ga₂O₃) thin films were grown by plasma-enhanced atomic layer deposition using O₂ plasma as reactant and trimethylgallium as a gallium source. The growth rate of the Ga₂O₃ films was about 0.6 Å/cycle and was acquired at a temperature ranging from 80 to 250 °C. The investigation of transmittance and the adsorption edge of Ga₂O₃ films prepared on sapphire substrates showed that the band gap energy gradually decreases from 5.04 to 4.76 eV with the increasing temperature. X-ray photoelectron spectroscopy (XPS) analysis indicated that all the Ga₂O₃ thin films showed a good stoichiometric ratio, and the atomic ratio of Ga/O was close to 0.7. According to XPS analysis, the proportion of Ga³⁺ and lattice oxygen increases with the increase in temperature resulting in denser films. By analyzing the film density from X-ray reflectivity and by a refractive index curve, it was found that the higher temperature, the denser the film. Atomic force microscopic analysis showed that the surface roughness values increased from 0.091 to 0.187 nm with the increasing substrate temperature. X-ray diffraction and transmission electron microscopy investigation showed that Ga₂O₃ films grown at temperatures from 80 to 200 °C were amorphous, and the Ga₂O₃ film grown at 250 °C was slightly crystalline with some nanocrystalline structures.