Defect Study and Modelling of SnX3-Based Perovskite Solar Cells with SCAPS-1D

Solar power conversion: CuI hole transport layer and Ba3NCl3 absorber enable advanced solar cell technology boosting efficiency over 30

Researchers are becoming more interested in novel barium-nitride-chloride (Ba3NCl3) hybrid perovskite solar cells (HPSCs) due to their remarkable semiconductor properties. An electron transport layer (ETL) built from TiO2 and a hole transport layer (HTL) made of CuI have been studied in Ba3NCl3-based single junction photovoltaic cells in a variety of variations. Through extensive numerical analysis using SCAPS-1D simulation software, we investigated elements such as layer thickness, defect density, doping concentration, interface defect density, carrier concentration, generation, recombination, temperature, series and shunt resistance, open circuit voltage (V OC), short circuit current (J SC), fill factor (FF), and power conversion efficiency (PCE). The study found that the HTL CuI design reached the highest PCE at 30.47% with a V OC of 1.0649 V, a J SC of 38.2609 mA cm-2, and an FF of 74.78%. These findings offer useful data and a practical plan for producing inexpensive, Ba3NCl3-based thin-film solar cells.

Design and Optimization of High-Performance Novel RbPbBr3-Based Solar Cells with Wide-Band-Gap S-Chalcogenide Electron Transport Layers (ETLs)

Inorganic cubic rubidium-lead-halide perovskites have attracted considerable attention owing to their structural, electronic, and unique optical properties. In this study, novel rubidium-lead-bromide (RbPbBr3)-based hybrid perovskite solar cells (HPSCs) with several high-band-gap chalcogenide electron transport layers (ETLs) of In2S3, WS2, and SnS2 were studied by density functional theory (DFT) and using the SCAPS-1D simulator. Initially, the band gap and optical performance were computed using DFT, and these results were utilized for the first time in the SCAPS-1D simulator. Furthermore, the impact of different major influencing parameters, that is, the thickness of the layer, bulk defect density, doping concentration, and defect density of interfaces, including the working temperature, were also investigated and unveiled. Further, a study on an optimized device with the most potential ETL (SnS2) layer was performed systematically. Finally, a comparative study of different reported heterostructures was performed to explore the benchmark of the most recent efficient RbPbBr3-based photovoltaics. The highest power conversion efficiency (PCE) was 29.75% for the SnS2 ETL with Voc of 0.9789 V, Jsc of 34.57863 mA cm-2, and fill factor (FF) of 87.91%, while the PCEs of 21.15 and 24.57% were obtained for In2S3 and WS2 ETLs, respectively. The electron-hole generation, recombination rates, and quantum efficiency (QE) characteristics were also investigated in detail. Thus, the SnS2 ETL shows strong potential for use in RbPbBr3-based hybrid perovskite high-performance photovoltaic devices.

NiO thickness measurement using a rectangular-type Sagnac interferometer as the material transport layer in a perovskite solar cell

This work aims to utilize a phase-shifting technique in a rectangular-type Sagnac interferometer (RTSI) to measure the thickness of a thin film of nickel (II) oxide (NiO) in an electron transport layer (ETL) in perovskite solar cell preparation. The NiO layer is deposited on a fluorine-doped tin oxide (FTO) glass substrate. In the RTSI setup, the signal output from the interferometer is divided into the reference and testing arms using a nonpolarizing beam splitter (NPBS). The balanced photodetectors then detect the signal, with the FTO/NiO layer placed in the testing arm and pure FTO in the reference arm. By analyzing the signal intensities at polarization settings of 0° to 180°, the phase shift and thickness of the NiO layer can be determined. The thickness values of FTO and NiO films obtained through three different phase-shifting algorithms of three-, four-, and five-steps are calculated. The obtained NiO thickness values are validated against scanning electron microscopy (SEM). Finally, by considering the NiO thickness value that exhibits the lowest percentage error compared to one from SEM, it is confirmed that the three-step algorithm is the most suitable scheme for obtaining intensities at 0°, 45°, and 90°. Therefore, the proposed setup shows promise as a replacement for SEM in thickness measurements.

Design and optimization of a high efficiency CdTe-FeSi2 based double-junction two-terminal tandem solar cell

This article theoretically demonstrates an enormously efficient CdTe-FeSi2 based dual-junction tandem solar cell accompanied by slender semiconductor layers. The peak efficiency of the device has been ensured through the optimization of its various attributes of window, CdTe (bandgap 1.5 eV) top absorber, FeSi2 (bandgap 0.87 eV) bottom absorber and back surface layers. Additionally, the impacts of thickness, doping and the level of defects in different window, base and rear surface layers have been examined to observe how different layers affect the solar cell's performance. The optimized n-CdS/p-CdTe/p+-MoS2--n-CdS/p-FeSi2/p+-Cu2SnS3 dual-junction tandem solar device displays an efficiency of 43.9% with a voltage at no load, VOC of 1.928 V, current density under a closed circuit, JSC of 25.34 mA/cm2, and fill factor of 89.88%, respectively. These results disclose the high potential of the suggested solar cell based on CdTe and FeSi2 compounds.

Mathematical Modeling and Optimization of Highly Efficient Nontoxic All-Inorganic CsSnGeI3-Based Perovskite Solar Cells with Oxide and Kesterite Charge Transport Layers

Despite exceptional optoelectronic properties and rapidly increasing efficiency of perovskite solar cells (PSCs), the issues of toxicity and device instability have hampered the commercialization of this renewable energy technology. Lead (Pb) being the main culprit creates major environmental risks and therefore must be replaced with a nontoxic material such as tin (Sn), germanium (Ge), etc. Moreover, replacing organic cations in the perovskite's ABX3 structure with inorganic ones like cesium (Cs) helps aid the stability issues. This study uses six different kesterite-based hole transport layers (HTLs) and three different metal oxide-based electron transport layers (ETLs) to numerically simulate and optimize all-inorganic CsSnGeI3 PSCs. Metal oxide ETLs are used in this study due to their large band gap, while kesterite HTLs are used due to their excellent conductive properties. All of the simulations are performed under standard testing conditions. A total of 18 novel planar (n-i-p) PSCs are modeled by the combination of various charge transport layers (CTLs), and the device optimization was done to enhance the power conversion efficiencies (PCEs) of the PSCs. Furthermore, the effect of CTLs on the energy band alignment, electric field, quantum efficiency, light absorption, and recombination rate is analyzed. Additionally, a detailed analysis of the impact of defect density (Nt), interface defects (ETL/Perv, Perv/HTL), temperature, and work function on the functionality of 18 different CsSnGeI3-based PSCs is conducted. The simulation findings demonstrate that SnO2/CsSnGeI3/CNTS is the most efficient optimized PSC among all of the simulated structures, with a PCE of 27.33%, Jsc of 28.04 mA/cm2, FF of 85%, and Voc of 1.14 V.

Improving the efficiency of a CIGS solar cell to above 31% with Sb2S3 as a new BSF: a numerical simulation approach by SCAPS-1D

The remarkable performance of copper indium gallium selenide (CIGS)-based double heterojunction (DH) photovoltaic cells is presented in this work. To increase all photovoltaic performance parameters, in this investigation, a novel solar cell structure (FTO/SnS2/CIGS/Sb2S3/Ni) is explored by utilizing the SCAPS-1D simulation software. Thicknesses of the buffer, absorber and back surface field (BSF) layers, acceptor density, defect density, capacitance-voltage (C-V), interface defect density, rates of generation and recombination, operating temperature, current density, and quantum efficiency have been investigated for the proposed solar devices with and without BSF. The presence of the BSF layer significantly influences the device's performance parameters including short-circuit current (Jsc), open-circuit voltage (Voc), fill factor (FF), and power conversion efficiency (PCE). After optimization, the simulation results of a conventional CIGS cell (FTO/SnS2/CIGS/Ni) have shown a PCE of 22.14% with Voc of 0.91 V, Jsc of 28.21 mA cm-2, and FF of 86.31. Conversely, the PCE is improved to 31.15% with Voc of 1.08 V, Jsc of 33.75 mA cm-2, and FF of 88.50 by introducing the Sb2S3 BSF in the structure of FTO/SnS2/CIGS/Sb2S3/Ni. These findings of the proposed CIGS-based double heterojunction (DH) solar cells offer an innovative method for realization of high-efficiency solar cells that are more promising than the previously reported traditional designs.

Optimization and Performance Analysis of a TiO2/i-CH3NH3SnBr3/CsPbI3/Al(BSF) Heterojunction Perovskite Solar Cell for Enhanced Efficiency

This paper reports the simulation and optimization of heterojunction perovskite solar cells (PSCs) with a proposed structure of TiO2/i-CH3NH3SnBr3/CsPbI3/Al(BSF) using SCAPS-1D software. The purpose of this study is to investigate the performance of the PSC with CsPbI3 perovskite active layers and i-CH3NH3SnBr3 as the permeable layer. Therefore, the thicknesses of the layers of the heterojunction perovskite are modified in order to find a better conversion efficiency of the solar cell, where the latter's performance is improved by optimizing the absorber's thickness, which is found to be 1 μm, with a permeable layer of 15 μm. The device efficiency of the i-CH3NH3SnBr3/CsPbI3 heterojunction is improved to 38.98%, and optimized parameters are Voc = 1.21 mV, Jsc = 35.63 mA/cm2, and FF = 89.84%. The acceptor concentration (Na), donor concentration (Nd), defect density, and series and shunt resistances are also investigated.

Deep Insights into the Coupled Optoelectronic and Photovoltaic Analysis of Lead-Free CsSnI3 Perovskite-Based Solar Cell Using DFT Calculations and SCAPS-1D Simulations

CsSnI₃ is considered to be a viable alternative to lead (Pb)-based perovskite solar cells (PSCs) due to its suitable optoelectronic properties. The photovoltaic (PV) potential of CsSnI₃ has not yet been fully explored due to its inherent difficulties in realizing defect-free device construction owing to the nonoptimized alignment of the electron transport layer (ETL), hole transport layer (HTL), efficient device architecture, and stability issues. In this work, initially, the structural, optical, and electronic properties of the CsSnI₃ perovskite absorber layer were evaluated using the CASTEP program within the framework of the density functional theory (DFT) approach. The band structure analysis revealed that CsSnI₃ is a direct band gap semiconductor with a band gap of 0.95 eV, whose band edges are dominated by Sn 5s/5p electrons After performing the DFT analysis, we investigated the PV performance of a variety of CsSnI₃-based solar cell configurations utilizing a one-dimensional solar cell capacitance simulator (SCAPS-1D) with different competent ETLs such as IGZO, WS₂, CeO₂, TiO₂, ZnO, PCBM, and C₆₀. Simulation results revealed that the device architecture comprising ITO/ETL/CsSnI₃/CuI/Au exhibited better photoconversion efficiency among more than 70 different configurations. The effect of the variation in the absorber, ETL, and HTL thickness on PV performance was analyzed for the above-mentioned configuration thoroughly. Additionally, the impact of series and shunt resistance, operating temperature, capacitance, Mott-Schottky, generation, and recombination rate on the six superior configurations were evaluated. The J-V characteristics and the quantum efficiency plots for these devices are systematically investigated for in-depth analysis. Consequently, this extensive simulation with validation results established the true potential of CsSnI₃ absorber with suitable ETLs including ZnO, IGZO, WS₂, PCBM, CeO₂, and C₆₀ ETLs and CuI as HTL, paving a constructive research path for the photovoltaic industry to fabricate cost-effective, high-efficiency, and nontoxic CsSnI₃ PSCs.

Touhidul Islam AZ. Performance Enhancement of an MoS2-Based Heterojunction Solar Cell with an In2Te3 Back Surface Field: A Numerical Simulation Approach

Researchers are currently showing interest in molybdenum disulfide (MoS₂)-based solar cells due to their remarkable semiconducting characteristics. The incompatibility of the band structures at the BSF/absorber and absorber/buffer interfaces, as well as carrier recombination at the rear and front metal contacts, prevents the expected result from being achieved. The main purpose of this work is to enhance the performance of the newly proposed Al/ITO/TiO₂/MoS₂/In₂Te₃/Ni solar cell and investigate the impacts of the In₂Te₃ BSF and TiO₂ buffer layer on the performance parameters of open-circuit voltage (V _OC), short-circuit current density (J _SC), fill factor (FF), and power conversion efficiency (PCE). This research has been performed by utilizing SCAPS simulation software. The performance parameters such as variation of thickness, carrier concentration, the bulk defect concentration of each layer, interface defect, operating temperature, capacitance-voltage (C-V), surface recombination velocity, and front as well as rear electrodes have been analyzed to achieve a better performance. This device performs exceptionally well at lower carrier concentrations (1 × 10¹⁶ cm^-3) in a thin (800 nm) MoS₂ absorber layer. The PCE, V _OC, J _SC, and FF values of the Al/ITO/TiO₂/MoS₂/Ni reference cell have been estimated to be 22.30%, 0.793 V, 30.89 mA/cm², and 80.62% respectively, while the PCE, V _OC, J _SC, and FF values have been determined to be 33.32%, 1.084 V, 37.22 mA/cm², and 82.58% for the Al/ITO/TiO₂/MoS₂/In₂Te₃/Ni proposed solar cell by introducing In₂Te₃ between the absorber (MoS₂) and the rear electrode (Ni). The proposed research may give an insight and a feasible way to realize a cost-effective MoS₂-based thin-film solar cell.

An extensive study on multiple ETL and HTL layers to design and simulation of high-performance lead-free CsSnCl3-based perovskite solar cells

Cesium tin chloride (CsSnCl₃) is a potential and competitive absorber material for lead-free perovskite solar cells (PSCs). The full potential of CsSnCl₃ not yet been realized owing to the possible challenges of defect-free device fabrication, non-optimized alignment of the electron transport layer (ETL), hole transport layer (HTL), and the favorable device configuration. In this work, we proposed several CsSnCl₃-based solar cell (SC) configurations using one dimensional solar cell capacitance simulator (SCAPS-1D) with different competent ETLs like indium-gallium-zinc-oxide (IGZO), tin-dioxide (SnO₂), tungsten disulfide (WS₂), ceric dioxide (CeO₂), titanium dioxide (TiO₂), zinc oxide (ZnO), C₆₀, PCBM, and HTLs of cuprous oxide (Cu₂O), cupric oxide (CuO), nickel oxide (NiO), vanadium oxide (V₂O₅), copper iodide (CuI), CuSCN, CuSbS₂, Spiro MeOTAD, CBTS, CFTS, P3HT, PEDOT:PSS. Simulation results revealed that ZnO, TiO₂, IGZO, WS₂, PCBM, and C₆₀ ETLs-based halide perovskites with ITO/ETLs/CsSnCl₃/CBTS/Au heterostructure exhibited outstanding photoconversion efficiency retaining nearest photovoltaic parameters values among 96 different configurations. Further, for the six best-performing configurations, the effect of the CsSnCl₃ absorber and ETL thickness, series and shunt resistance, working temperature, impact of capacitance, Mott-Schottky, generation and recombination rate, current-voltage properties, and quantum efficiency on performance were assessed. We found that ETLs like TiO₂, ZnO, and IGZO, with CBTS HTL can act as outstanding materials for the fabrication of CsSnCl₃-based high efficiency (η ≥ 22%) heterojunction SCs with ITO/ETL/CsSnCl₃/CBTS/Au structure. The simulation results obtained by the SCAPS-1D for the best six CsSnCl₃-perovskites SC configurations were compared by the wxAMPS (widget provided analysis of microelectronic and photonic structures) tool for further validation. Furthermore, the structural, optical and electronic properties along with electron charge density, and Fermi surface of the CsSnCl₃ perovskite absorber layer were computed and analyzed using first-principle calculations based on density functional theory. Thus, this in-depth simulation paves a constructive research avenue to fabricate cost-effective, high-efficiency, and lead-free CsSnCl₃ perovskite-based high-performance SCs for a lead-free green and pollution-free environment.

Antisolvent Engineering to Enhance Photovoltaic Performance of Methylammonium Bismuth Iodide Solar Cells

High absorption ability and direct bandgap makes lead-based perovskite to acquire high photovoltaic performance. However, lead content in perovskite becomes a double-blade for counterbalancing photovoltaic performance and sustainability. Herein, we develop a methylammonium bismuth iodide (MBI), a perovskite-derivative, to serve as a lead-free light absorber layer. Owing to the short carrier diffusion length of MBI, its film quality is a predominant factor to photovoltaic performance. Several candidates of non-polar solvent are discussed in aspect of their dipole moment and boiling point to reveal the effects of anti-solvent assisted crystallization. Through anti-solvent engineering of toluene, the morphology, crystallinity, and element distribution of MBI films are improved compared with those without toluene treatment. The improved morphology and crystallinity of MBI films promote photovoltaic performance over 3.2 times compared with the one without toluene treatment. The photovoltaic device can achieve 0.26% with minor hysteresis effect, whose hysteresis index reduces from 0.374 to 0.169. This study guides a feasible path for developing MBI photovoltaics.

Effect of Various Electron and Hole Transport Layers on the Performance of CsPbI3-Based Perovskite Solar Cells: A Numerical Investigation in DFT, SCAPS-1D, and wxAMPS Frameworks

CsPbI₃ has recently received tremendous attention as a possible absorber of perovskite solar cells (PSCs). However, CsPbI₃-based PSCs have yet to achieve the high performance of the hybrid PSCs. In this work, we performed a density functional theory (DFT) study using the Cambridge Serial Total Energy Package (CASTEP) code for the cubic CsPbI₃ absorber to compare and evaluate its structural, electronic, and optical properties. The calculated electronic band gap (E _g) using the GGA-PBE approach of CASTEP was 1.483 eV for this CsPbI₃ absorber. Moreover, the computed density of states (DOS) exhibited the dominant contribution from the Pb-5d orbital, and most charges also accumulated for the Pb atom as seen from the electronic charge density map. Fermi surface calculation showed multiband character, and optical properties were computed to investigate the optical response of CsPbI₃. Furthermore, we used IGZO, SnO₂, WS₂, CeO₂, PCBM, TiO₂, ZnO, and C₆₀ as the electron transport layers (ETLs) and Cu₂O, CuSCN, CuSbS₂, Spiro-MeOTAD, V₂O₅, CBTS, CFTS, P3HT, PEDOT:PSS, NiO, CuO, and CuI as the hole transport layers (HTLs) to identify the best HTL/CsPbI₃/ETL combinations using the SCAPS-1D solar cell simulation software. Among 96 device structures, the best-optimized device structure, ITO/TiO₂/CsPbI₃/CBTS/Au, was identified, which exhibited an efficiency of 17.9%. The effect of the absorber and ETL thickness, series resistance, shunt resistance, and operating temperature was also evaluated for the six best devices along with their corresponding generation rate, recombination rate, capacitance-voltage, current density-voltage, and quantum efficiency characteristics. The obtained results from SCAPS-1D were also compared with wxAMPS simulation results.

The Investigation of the Influence of a Cu2O Buffer Layer on Hole Transport Layers in MAPbI3-Based Perovskite Solar Cells

The passivation engineering of the hole transport layer in perovskite solar cells (PSCs) has significantly decreased carrier accumulation and open circuit voltage (V_oc) loss, as well as energy band mismatching, thus achieving the goal of high-power conversion efficiency. However, most devices incorporating organic/inorganic buffer layers suffer from poor stability and low efficiency. In this article, we have proposed an inorganic buffer layer of Cu₂O, which has achieved high efficiency on lower work function metals and various frequently used hole transport layers (HTLs). Once the Cu₂O buffer layer was applied to modify the Cu/PTAA interface, the device exhibited a high V_oc of 1.20 V, a high FF of 75.92%, and an enhanced PCE of 22.49% versus a V_oc of 1.12 V, FF of 69.16%, and PCE of 18.99% from the (PTAA/Cu) n-i-p structure. Our simulation showed that the application of a Cu₂O buffer layer improved the interfacial contact and energy alignment, promoting the carrier transportation and reducing the charge accumulation. Furthermore, we optimized the combinations of the thicknesses of the Cu₂O, the absorber layer, and PTAA to obtain the best performance for Cu-based perovskite solar cells. Eventually, we explored the effect of the defect density between the HTL/absorber interface and the absorber/ETL interface on the device and recommended the appropriate reference defect density for experimental research. This work provides guidance for improving the experimental efficiency and reducing the cost of perovskite solar cells.

Numerical Investigation of Photo-Generated Carrier Recombination Dynamics on the Device Characteristics for the Perovskite/Carbon Nitride Absorber-Layer Solar Cell

The nitrogenated holey two-dimensional carbon nitride (C2N) has been efficaciously utilized in the fabrication of transistors, sensors, and batteries in recent years, but lacks application in the photovoltaic industry. The C2N possesses favorable optoelectronic properties. To investigate its potential feasibility for solar cells (as either an absorber layer/interface layer), we foremost detailed the numerical modeling of the double-absorber-layer−methyl ammonium lead iodide (CH3NH3PbI3) −carbon nitride (C2N) layer solar cell and subsequently provided in-depth insight into the active-layer-associated recombination losses limiting the efficiency (η) of the solar cell. Under the recombination kinetics phenomena, we explored the influence of radiative recombination, Auger recombination, Shockley Read Hall recombination, the energy distribution of defects, Band Tail recombination (Hoping Model), Gaussian distribution, and metastable defect states, including single-donor (0/+), single-acceptor (−/0), double-donor (0/+/2+), double-acceptor (2/−/0−), and the interface-layer defects on the output characteristics of the solar cell. Setting the defect (or trap) density to 1015cm−3 with a uniform energy distribution of defects for all layers, we achieved an η of 24.16%. A considerable enhancement in power-conversion efficiency ( η~27%) was perceived as we reduced the trap density to 1014cm−3 for the absorber layers. Furthermore, it was observed that, for the absorber layer with double-donor defect states, the active layer should be carefully synthesized to reduce crystal-order defects to keep the total defect density as low as 1017cm−3 to achieve efficient device characteristics.

In Silico Investigation of the Impact of Hole-Transport Layers on the Performance of CH3NH3SnI3 Perovskite Photovoltaic Cells

Perovskite solar cells represent one of the recent success stories in photovoltaics. The device efficiency has been steadily increasing over the past years, but further work is needed to enhance the performance, for example, through the reduction of defects to prevent carrier recombination. SCAPS-1D simulations were performed to assess efficiency limits and identify approaches to decrease the impact of defects, through the selection of an optimal hole-transport material and a hole-collecting electrode. Particular attention was given to evaluation of the influence of bulk defects within light-absorbing CH3NH3SnI3 layers. In addition, the study demonstrates the influence of interface defects at the TiO2/CH3NH3SnI3 (IL1) and CH3NH3SnI3/HTL (IL2) interfaces across the similar range of defect densities. Finally, the optimal device architecture TiO2/CH3NH3SnI3/Cu2O is proposed for the given absorber layer using the readily available Cu2O hole-transporting material with PCE = 27.95%, FF = 84.05%, VOC = 1.02 V and JSC = 32.60 mA/cm2, providing optimal performance and enhanced resistance to defects.

Design and Optimize the Performance of Self-Powered Photodetector Based on PbS/TiS3 Heterostructure by SCAPS-1D

Titanium trisulphide (TiS₃) has been widely used in the field of optoelectronics owing to its superb optical and electronic characteristics. In this work, a self-powered photodetector using bulk PbS/TiS₃ p-n heterojunction is numerically investigated and analyzed by a Solar Cell Capacitance Simulator in one-Dimension (SCAPS-1D) software. The energy bands, electron-holes generation or recombination rate, current density-voltage (J-V), and spectral response properties have been investigated by SCAPS-1D. To improve the performance of photodetectors, the influence of thickness, shallow acceptor or donor density, and defect density are investigated. By optimization, the optimal thickness of the TiS₃ layer and PbS layer are determined to be 2.5 μm and 700 nm, respectively. The density of the superior shallow acceptor (donor) is 10¹⁵ (10²²) cm⁻³. High quality TiS₃ film is required with the defect density of about 10¹⁴ cm⁻³. For the PbS layer, the maximum defect density is 10¹⁷ cm⁻³. As a result, the photodetector based on the heterojunction with optimal parameters exhibits a good photoresponse from 300 nm to 1300 nm. Under the air mass 1.5 global tilt (AM 1.5G) illuminations, the optimal short-circuit current reaches 35.57 mA/cm² and the open circuit voltage is about 870 mV. The responsivity (R) and a detectivity (D*) of the simulated photodetector are 0.36 A W⁻¹ and 3.9 × 10¹³ Jones, respectively. The simulation result provides a promising research direction to further broaden the TiS₃-based optoelectronic device.

Design and Numerical Investigation of a Lead-Free Inorganic Layered Double Perovskite Cs4CuSb2Cl12 Nanocrystal Solar Cell by SCAPS-1D

In the last decade, perovskite solar cells have made a quantum leap in performance with the efficiency increasing from 3.8% to 25%. However, commercial perovskite solar cells have faced a major impediment due to toxicity and stability issues. Therefore, lead-free inorganic perovskites have been investigated in order to find substitute perovskites which can provide a high efficiency similar to lead-based perovskites. In recent studies, as a kind of lead-free inorganic perovskite material, Cs₄CuSb₂Cl₁₂ has been demonstrated to possess impressive photoelectric properties and excellent environmental stability. Moreover, Cs₄CuSb₂Cl₁₂ nanocrystals have smaller effective photo-generated carrier masses than bulk Cs₄CuSb₂Cl₁₂, which provides excellent carrier mobility. To date, there have been no reports about Cs₄CuSb₂Cl₁₂ nanocrystals used for making solar cells. To explore the potential of Cs₄CuSb₂Cl₁₂ nanocrystal solar cells, we propose a lead-free perovskite solar cell with the configuration of FTO/ETL/Cs₄CuSb₂Cl₁₂ nanocrystals/HTL/Au using a solar cell capacitance simulator. Moreover, we numerically investigate the factors that affect the performance of the Cs₄CuSb₂Cl₁₂ nanocrystal solar cell with the aim of enhancing its performance. By selecting the appropriate hole transport material, electron transport material, thickness of the absorber layer, doping densities, defect density in the absorber, interface defect densities, and working temperature point, we predict that the Cs₄CuSb₂Cl₁₂ nanocrystal solar cell with the FTO/TiO₂/Cs₄CuSb₂Cl₁₂ nanocrystals/Cu₂O/Au structure can attain a power conversion efficiency of 23.07% at 300 K. Our analysis indicates that Cs₄CuSb₂Cl₁₂ nanocrystals have great potential as an absorbing layer towards highly efficient lead-free all-inorganic perovskite solar cells.