Carrier Blocking Layer Materials and Application in Organic Photodetectors

Self-powered photodetectors: a device engineering perspective

Nanoscale self-powered photodetectors that can work without any external source of energy are required for future applications. There is potential demand for these devices in areas like wireless surveillance, weather forecasting, remote monitoring, and places where the availability of power is scarce. This study provides an overview of state of the art research trends and improvements in self-powered photodetectors. A device engineering perspective for improvement in the figures of merit has been presented along with a description of additional effects like pyro-phototronic, piezo-phototronic, and surface plasmonics.

Photomultiplication Behavior of Chlorophyll-Based Photodetector under Biased Voltage

In this study, we fabricated a photodetector (PD) with two types of chlorophyll derivatives, namely, zinc methyl 3-devinyl-3-hydroxymethyl-pyropheophorbide-a (ZnChl) and methyl 131-deoxo-131-dicyanomethylene-pyropheophorbide-a (H2Chl'), via a two-step drop-coating process. In the absorption range of ZnChl/H2Chl' films, the maximum external quantum efficiency of ZnChl/H2Chl'-based devices reached 1363% at -8 V and 1345% at 2.5 V, exhibiting the photomultiplication (PM) phenomenon. The PM phenomenon of ZnChl/H2Chl'-based devices is attributed to hole tunneling injection from the external circuit assisted by electron accumulation in the ZnChl and H2Chl' under light illumination. Through the investigation of the responsivity (R) of ZnChl/H2Chl'-based devices, it has been found that achieving a high R is easier under forward bias compared with reverse bias (7706 mA/W at -8 V and 7629 mA/W at 2.5 V). The organic PDs based on ZnChl/H2Chl' exhibit PM behavior, offering a promising approach to improve the device's responsivity.

Organic photodiodes: device engineering and applications

Organic photodiodes (OPDs) have shown great promise for potential applications in optical imaging, sensing, and communication due to their wide-range tunable photoelectrical properties, low-temperature facile processes, and excellent mechanical flexibility. Extensive research work has been carried out on exploring materials, device structures, physical mechanisms, and processing approaches to improve the performance of OPDs to the level of their inorganic counterparts. In addition, various system prototypes have been built based on the exhibited and attractive features of OPDs. It is vital to link the device optimal design and engineering to the system requirements and examine the existing deficiencies of OPDs towards practical applications, so this review starts from discussions on the required key performance metrics for different envisioned applications. Then the fundamentals of the OPD device structures and operation mechanisms are briefly introduced, and the latest development of OPDs for improving the key performance merits is reviewed. Finally, the trials of OPDs for various applications including wearable medical diagnostics, optical imagers, spectrometers, and light communications are reviewed, and both the promises and challenges are revealed.

A New Dioxasilepine-Aryldiamine Hybrid Electron-Blocking Material for Wide Linear Dynamic Range and Fast Response Organic Photodetector

A new dioxasilepine and aryldiamine hybrid material DPSi-DBDTA is designed to act as the electron-blocking layer (EBL) for vacuum-processed organic photodetector (OPD). The O-Si-O-linked cyclic structure leads DPSi-DBDTA to have dipolar character, high LUMO, and good thermal and morphology stability suitable for vacuum deposition. An initial trial with C₆₀-based single active layer OPD device manifests the superior capability of DPSi-DBDTA for dark current suppression compared to the typical aryldiamines. Here, the bare and MoO₃-doped DPSi-DBDTA is further examined as EBLs for the visible light responsive OPD comprising DTDCPB/C₇₀ bulk heterojunction (BHJ) as the active layer. In sync with the result of C₆₀-based OPD, the low dark current density and high specific detectivity D* (7.085 × 10¹² cm Hz^1/2 W^-1) are achieved. The device with 5% MoO₃-doped EBL can exhibit a wide linear dynamic range (LDR) up to 154.166 dB, which is attributed to suppression of both dark current density and carrier recombination. Additionally, the devices also manifest fast time-resolved performance in both frequency and transient response measurements. Especially for the device with 20% MoO₃-doped EBL, a wide cutoff frequency response 692.047 kHz and record-high transient response demonstrating ≤0.683 μs for transient photovoltage (TPV) and ≤0.478 μs for transient photocurrent (TPC) have been realized, which is possibly owing to the balance of mobility that mitigates the damage from traps. Such submicrosecond response is comparable with the state-of-the-art perovskite-PDs and Si-PDs.