Optical Anapole Modes in Gallium Phosphide Nanodisk with Forked Slits for Electric Field Enhancement

Enhanced spontaneous radiation of quantum dots based on modulated anapole states in dielectric metamaterial

Dielectric nanostructures exhibit low-loss electrical and magnetic resonance, making them ideal for quantum information processing. In this study, the periodic double-groove silicon nanodisk (DGSND) is used to support the anapole state. Based on the distribution properties of the electromagnetic field in anapole states, the anapoles are manipulated by cutting the dielectric metamaterial. Quantum dots (QDs) are used to stimulate the anapole and control the amplification of the photoluminescence signal within the QDs. By opening symmetrical holes in the long axis of the nanodisk in the dielectric metamaterial, the current distribution of Mie resonance can be adjusted. As a result, the toroidal dipole moment is altered, leading to an enhanced electric field (E-field) and Purcell factor. When the dielectric metamaterial is deposited on the Ag substrate separated by the silicon dioxide (SiO2) layer, the structure exhibits ultra-narrow perfect absorption with even higher E-field and Purcell factor enhancement compared to silicon (Si) nanodisks.

Multi-wavelength unidirectional forward scattering properties of the arrow-shaped gallium phosphide nanoantenna

An arrow-shaped gallium phosphide nanoantenna exhibits both near-field electric field enhancement and far-field unidirectional scattering, and the interference conditions involve electric and magnetic quadrupoles as well as toroidal dipoles. By using long-wavelength approximation and exact multipole decomposition, the interference conditions required for far-field unidirectional transverse light scattering and backward near-zero scattering at multiple wavelengths are determined. The near-field properties are excellent, as exemplified by large Purcell factors of 4.5×109 for electric dipole source excitation, 464.68 for magnetic dipole source excitation, and 700 V/m for the field enhancement factor. The degree of enhancement of unidirectional scattering is affected by structural parameters such as the angle and thickness of the nanoantenna. The arrow-shaped nanoantenna is an efficient platform to enhance the electric field and achieve high directionality of light scattering. Moreover, the nanostructure enables flexible manipulation of light waves and materials, giving rise to superior near-field and far-field performances, which are of great importance pertaining to the practicability and application potential of optical antennas in applications such as spectroscopy, sensing, displays, and optoelectronic devices.

Design of optical anapole modes of all-dielectric nanoantennas for SERS applications

To obtain large electric field enhancement while mitigating material losses, an all-dielectric nanoantenna composed of a heptamer and nanocubes is designed and analyzed. A numerical simulation by the finite element method reveals that the nanoantenna achieves the optical electric anapole modes, thereby significantly enhancing the coupling between different dielectrics to further improve the near-field enhancement and spontaneous radiation. Field enhancement factors |E/E 0|2 of 3,563 and 5,395 (AM1 and AM2) and a Purcell factor of 3,872 are observed in the wavelength range between 350 and 800 nm. This nanoantenna has promising potential in applications involving surface-enhanced Raman scattering and nonlinearities due to its low cost and excellent compatibility.

Pressure effects on the metallization and dielectric properties of GaP

In situ impedance measurement, resistivity measurements and first-principles calculations have been performed to investigate the effect of high pressure (up to 30.2 GPa) on the metallization and dielectric properties of GaP. It is found that the carrier transport process changes from mixed grain and grain boundary conduction to pure grain conduction at 5.8 GPa, and due to pressure-induced structural phase transition, the resistance drops drastically by three orders of magnitude at 25.5 GPa. Temperature dependence of resistivity measurements and band structure calculations suggest the occurrence of a semiconductor-metal transition. Combining differential charge density and dielectric analysis, it is observed that the electron localization is weakened, which leads to increased polarization and larger relative permittivity in the zb structure. After the phase transition, both the polarization and the relative permittivity decrease. Pressure increases the complex dielectric constant and dielectric loss factor, due to the increase in relaxation polarization and the scattering effect of carriers. Moreover, by comparing the high-pressure behavior of GaP, GaAs and GaSb, the changes in the electronic structure and electric transport process caused by the phase transition can be understood, which can enable us to better understand the metallization behavior and dielectric properties of Ga-based III-V family semiconductors under pressure, and stimulate the design and modification of other related group III-V semiconductors for optoelectronic devices and sensors.