Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers

Mid-IR lasing in HgCdTe multiple quantum well edge-emitting ridges

Thin HgCdTe/CdHgTe quantum wells (QWs) grown on alternative GaAs (013) substrates have been recently proposed as a material for coherent emitters in the mid-IR region. In this work, we develop a technological process for the fabrication of ridge microresonators in waveguide heterostructures with multiple HgCdTe QWs via photolithography and ion etching. We process two samples with different ridge heights and analyze their emission spectra measured under optical excitation. The width of the emission spectra dropped by an order of magnitude compared to the nonprocessed as-grown structure, allowing one to conclude that lasing at 9.2-7.1 µm takes place within the 8-120 K temperature range. However, both samples demonstrated faster temperature quenching of lasing than that of the single-pass stimulated emission from the nonprocessed structure, as well as a drop in the carrier lifetimes. These figures of merit are likely to be compromised not by the Q factor of the cavities, but due to defects induced during the etching process. Finally, the implications for HgCdTe-based lasers for the 3-5 µm transparency window and longer wavelengths (beyond 20 µm) are discussed.

Balancing the Number of Quantum Wells in HgCdTe/CdHgTe Heterostructures for Mid-Infrared Lasing

HgCdTe-based heterostructures with quantum wells (QWs) are a promising material for semiconductor lasers in the atmospheric transparency window (3-5 μm) thanks to the possibility of suppressing Auger recombination due to the no-parabolic law of carrier dispersion. In this work, we analyze the thresholds of stimulated emission (SE) under optical pumping from heterostructures with a different number of QWs in the active region of the structure. Total losses in structures are determined from the comparison of thresholds for the different number of QWs in the active region. It is shown that, thanks to the increased modal gain, a higher number of QWs results in lower threshold pumping intensity and, consequently, higher temperature of SE. These results indicate that improvements to the modal gain can result in a moderate uplift in the temperature of SE from mid-infrared HgCdTe-based heterostructures. On the other hand, at a high enough QW count threshold, the intensity no longer depends on the number of the QWs and is determined by the transparency concentration of a single QW.