Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays

3D Lumerical simulation of silicon photodiodes with microholes for high-speed short-reach intra-datacenter interconnects

3D simulations are conducted using Lumerical software to study the performance of surface illuminated silicon positive-intrinsic-negative photodiodes with microholes. Drift-diffusion equations are solved including the effects of carrier lifetime due to Shockley-Read-Hall and Auger recombination mechanisms, as well as high field mobility. Lumerical's FDTD tool is used to determine the light absorption in the device. The generation profile is imported to Lumerical's CHARGE tool to determine the transient-limited impulse response. An equivalent circuit of the photodiode with microholes is developed for the simulation of an end-to-end high-speed system. Simulation results show an open eye diagram at 50 Gbps for 20µm×20µm devices.

Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

We investigated the growth and evolution of Si-based Ge quantum dots (Ge/Si QDs) under low Ge deposition (1.2-4.4 nm thick) using magnetron sputtering. The morphology and structure of QDs were analyzed with the help of an atomic force microscope (AFM), scanning electron microscope, transmission electron microscope, Raman, surface energy theory and dynamics theory, the photoelectric properties of QDs were characterized by photoluminescence (PL) spectra. The results showed that the growth mechanism of QDs conformed to Stranski-Krastanow mode, but the typical thickness of the wetting layer was nearly three times higher than those derived from conventional technologies such as molecular beam epitaxy, chemical vapor deposition, solid phase epitaxy and so on. Meanwhile, the shape evolution of QDs was very different from existing reports. The specific internal causes of these novel phenomena were analyzed and confirmed and reported in this paper. In addition, the AFM, Raman, and PL tests all indicated that the QDs grown when 3.4 nm Ge was deposited have the most excellent morphology, structure, and optoelectronic performance. Our work lays a foundation for further exploration of the controllable growth of QDs at high deposition rates, which is a new way to realize the industrialization of QDs used for future devices.

Gradual funnel photon trapping enhanced InAs/GaSb type-II superlattice infrared detector

InAs/GaSb type-II superlattice materials have attracted in the field of infrared detection due to their high quality, uniformity and stability. The performance of InAs/GaSb type-II superlattice detector is limited by dark noise and light response. This work reports a gradual funnel photon trapping (GFPT) structure enabling the light trapping in the T2SL detector absorption area. The GFPT detector exhibits an efficient broadband responsivity enhancement of 30% and a darker current noise reduction of 3 times. It has excellent passivated by atomic layer deposition and achieves a high detectivity of 1.51 × 10¹¹ cm Hz^1/2 at 78 K.

Light-Trapping-Enhanced Photodetection in Ge/Si Quantum Dot Photodiodes Containing Microhole Arrays with Different Hole Depths

Photodetection based on assemblies of quantum dots (QDs) is able to tie the advantages of both the conventional photodetector and unique electronic properties of zero-dimensional structures in an unprecedented way. However, the biggest drawback of QDs is the small absorbance of infrared radiation due to the low density of the states coupled to the dots. In this paper, we report on the Ge/Si QD pin photodiodes integrated with photon-trapping hole array structures of various thicknesses. The aim of this study was to search for the hole array thickness that provided the maximum optical response of the light-trapping Ge/Si QD detectors. With this purpose, the embedded hole arrays were etched to different depths ranging from 100 to 550 nm. By micropatterning Ge/Si QD photodiodes, we were able to redirect normal incident light laterally along the plane of the dots, therefore facilitating the optical conversion of the near-infrared photodetectors due to elongation of the effective absorption length. Compared with the conventional flat photodetector, the responsivity of all microstructured devices had a polarization-independent improvement in the 1.0-1.8-μm wavelength range. The maximum photocurrent enhancement factor (≈50× at 1.7 μm) was achieved when the thickness of the photon-trapping structure reached the depth of the buried QD layers.