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Lei B, Cui W, Sheng J, Zhong F, Dong F. Halogen-Site Regulation in Cs 3Bi 2X 9 Quantum Dots for Efficient and Selective Oxidation of Benzyl Alcohol Driven by Solar Light. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308088. [PMID: 38009494 DOI: 10.1002/smll.202308088] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Revised: 10/13/2023] [Indexed: 11/29/2023]
Abstract
Sluggish charge kinetics and low selectivity limit the solar-driven selective organic transformations under mild conditions. Herein, an efficient strategy of halogen-site regulation, based on the precise control of charge transfer and molecule activation by rational design of Cs3Bi2X9 quantum dots photocatalysts, is proposed to achieve both high selectivity and yield of benzyl-alcohol oxidation. In situ PL spectroscopy study reveals that the Bi─Br bonds formed in the form of Br-associated coordination can enhance the separation and transfer of photoexcited carriers during the practical reaction. As the active center, the exclusive Bi─Br covalence can benefit the benzyl-alcohol activation for producing carbon-centered radicals. As a result, the Cs3Bi2Br9 with this atomic coordination achieves a conversion ratio of 97.9% for benzyl alcohol and selectivity of 99.6% for aldehydes, which are 56.9- and 1.54-fold higher than that of Cs3Bi2Cl9. Combined with quasi-in situ EPR, in situ ATR-FTIR spectra, and DFT calculation, the conversion of C6H5-CH2OH to C6H5-CH2* at Br-related coordination is revealed to be a determining step, which can be accelerated via halogen-site regulation for enhancing selectivity and photocatalytic efficiency. The mechanistic insights of this research elucidate how halogen-site regulation in favor of charge transfer and molecule activation toward efficient and selective oxidation of benzyl alcohol.
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Affiliation(s)
- Ben Lei
- Research Center for Carbon-Neutral Environmental & Energy Technology, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Wen Cui
- College of Resources and Environmental Engineering, Guizhou University, Guiyang, 550025, China
| | - Jianping Sheng
- Research Center for Carbon-Neutral Environmental & Energy Technology, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Fengyi Zhong
- Research Center for Carbon-Neutral Environmental & Energy Technology, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Fan Dong
- Research Center for Carbon-Neutral Environmental & Energy Technology, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
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A Critical Review of the Use of Bismuth Halide Perovskites for CO2 Photoreduction: Stability Challenges and Strategies Implemented. Catalysts 2022. [DOI: 10.3390/catal12111410] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022] Open
Abstract
Inspired by natural photosynthesis, the photocatalytic CO2 reduction reaction (CO2RR) stands as a viable strategy for the production of solar fuels to mitigate the high dependence on highly polluting fossil fuels, as well as to decrease the CO2 concentration in the atmosphere. The design of photocatalytic materials is crucial to ensure high efficiency of the CO2RR process. So far, perovskite materials have shown high efficiency and selectivity in CO2RR to generate different solar fuels. Particularly, bismuth halide perovskites have gained much attention due to their higher absorption coefficients, their more efficient charge transfer (compared to oxide perovskites), and their required thermodynamic potential for CO2RR. Moreover, these materials represent a promising alternative to the highly polluting lead halide perovskites. However, despite all the remarkable advantages of bismuth halide perovskites, their use has been limited, owing to instability concerns. As a consequence, recent reports have offered solutions to obtain structures highly stable against oxygen, water, and light, promoting the formation of solar fuels with promising efficiency for CO2RR. Thus, this review analyzes the current state of the art in this field, particularly studies about stability strategies from intrinsic and extrinsic standpoints. Lastly, we discuss the challenges and opportunities in designing stable bismuth halide perovskites, which open new opportunities for scaling up the CO2RR.
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Wu Y, Xiang G, Zhang M, Wei D, Cheng C, Leng J, Ma H. Electronic Structures and Photoelectric Properties in Cs 3Sb 2X 9 (X = Cl, Br, or I) under High Pressure: A First Principles Study. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12172982. [PMID: 36080019 PMCID: PMC9457912 DOI: 10.3390/nano12172982] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2022] [Revised: 08/25/2022] [Accepted: 08/26/2022] [Indexed: 05/31/2023]
Abstract
Lead-free perovskites of Cs3Sb2X9 (X = Cl, Br, or I) have attracted wide attention owing to their low toxicity. High pressure is an effective and reversible method to tune bandgap without changing the chemical composition. Here, the structural and photoelectric properties of Cs3Sb2X9 under high pressure were theoretically studied by using the density functional theory. The results showed that the ideal bandgap for Cs3Sb2X9 can be achieved by applying high pressure. Moreover, it was found that the change of the bandgap is caused by the shrinkage of the Sb-X long bond in the [Sb2X9]3- polyhedra. Partial density of states indicated that Sb-5s and X-p orbitals contribute to the top of the valence band, while Sb-5p and X-p orbitals dominate the bottom of the conduction band. Moreover, the band structure and density of states showed significant metallicity at 38.75, 24.05 GPa for Cs3Sb2Br9 and Cs3Sb2I9, respectively. Moreover, the absorption spectra showed the absorption edge redshifted, and the absorption coefficient of the Cs3Sb2X9 increased under high pressure. According to our calculated results, the narrow bandgap and enhanced absorption ability under high pressure provide a new idea for the design of the photovoltaic and photoelectric devices.
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Affiliation(s)
- Yanwen Wu
- Shandong Provincial Key Laboratory of Optics, Photonic Device and Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China
| | - Guangbiao Xiang
- Shandong Provincial Key Laboratory of Optics, Photonic Device and Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China
| | - Man Zhang
- Shandong Provincial Key Laboratory of Optics, Photonic Device and Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China
| | - Dongmei Wei
- Shandong Provincial Key Laboratory of Optics, Photonic Device and Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China
| | - Chen Cheng
- Shandong Provincial Key Laboratory of Optics, Photonic Device and Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China
| | - Jiancai Leng
- Department of Physics, School of Electronic and Information Engineering, Qilu University of Technology (Shandong Academy of Science), Jinan 250353, China
| | - Hong Ma
- Shandong Provincial Key Laboratory of Optics, Photonic Device and Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China
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Xiang G, Wu Y, Zhang M, Leng J, Cheng C, Ma H. Strain-induced bandgap engineering in CsGeX 3 (X = I, Br or Cl) perovskites: insights from first-principles calculations. Phys Chem Chem Phys 2022; 24:5448-5454. [PMID: 35171170 DOI: 10.1039/d1cp05787a] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
Based on density functional theory and following first-principles methods, this paper investigated the electronic structures, densities of states, effective masses of electrons and holes, and optical properties of CsGeX3 (X = I, Br or Cl) perovskites under triaxial strains of -4% to 4%. The calculated results show that the tuning range of the bandgaps of the CsGeI3, CsGeBr3, and CsGeCl3 perovskites are 1.16 eV, 1.64 eV, and 1.63 eV, respectively. This result shows that the bandgap of the CsGeX3 perovskite is tuned over the entire visible spectrum by applying strain. Also, it is found that the change of the bandgap is caused by the change of the Ge-X long bond. Besides, the optimal bandgaps of CsGeI3 and CsGeBr3 can be achieved by applying compressive strains, providing theoretical support for adjusting the bandgaps of CsGeX3 perovskites. The effective masses of electrons and holes of CsGeX3 perovskites decrease gradually with the strains changing from 4% to -4%, which is conducive to the transmission of electrons and holes. In addition, the optical properties of CsGeX3 perovskites change from redshifted to blueshifted under different strains.
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Affiliation(s)
- Guangbiao Xiang
- Shandong Provincial Key Laboratory of Optics and Photonic Device, Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China.
| | - Yanwen Wu
- Shandong Provincial Key Laboratory of Optics and Photonic Device, Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China.
| | - Man Zhang
- Shandong Provincial Key Laboratory of Optics and Photonic Device, Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China.
| | - Jiancai Leng
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China.
| | - Chen Cheng
- Shandong Provincial Key Laboratory of Optics and Photonic Device, Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China.
| | - Hong Ma
- Shandong Provincial Key Laboratory of Optics and Photonic Device, Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China.
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