Ga2O3(Sn) Oxides for High-Temperature Gas Sensors

Solar-Blind Photodetector Arrays Fabricated by Weaving Strategy

The quest for solar-blind photodetectors (SBPDs) with exceptional optoelectronic properties for imaging applications has prompted the investigation of SBPD arrays. Ga2O3, characterized by its ultrawide bandgap and low growth cost, has emerged as a promising material for solar-blind detection. In this study, SBPD arrays were fabricated by weaving Sn-doped β-Ga2O3 microbelts (MBs). These MBs, which have a conductive core surrounded by a high-resistivity depletion surface layer resulting from the segregation of Sn and oxygen, are woven into a grid structure. Each intersection of the MBs functions as a photodetector pixel, with the intersecting MBs serving as the output electrodes of the pixel. This design simplifies the readout circuit for the photodetector array. The solar-blind photodetector array demonstrates superior solar-blind detection performance, including a dark current of 0.5 pA, a response time of 38.8 μs, a light/dark current ratio of 108, and a responsivity of 300 A/W. This research may provide a feasible strategy for the fabrication of photodetector arrays, thus pushing forward the application of photodetectors in imaging.

Sensing Mechanism and Characterization of NO2 Gas Sensors Using Gold-Black NP-Decorated Ga2O3 Nanorod Sensing Membranes

In this work, a vapor cooling condensation system was utilized to deposit various amounts of p-type gold-black nanoparticles (NPs) onto the surface of n-type gallium oxide (Ga2O3) nanorods forming p-n heterojunction-structured sensing membranes of nitrogen dioxide (NO2) gas sensors. The role and the sensing mechanism of the various gold-black NP-decorated Ga2O3 nanorods in NO2 gas sensors were investigated. The coverage and atomic percentage of the sensing membranes were observed using high-resolution transmission electron microscopy (HRTEM) measurements and energy-dispersive spectroscopy (EDS), respectively. For the NO2 gas sensor using the sensing membrane of 60 s-deposited gold-black NP-decorated Ga2O3 nanorods under a NO2 concentration of 10 ppm, the highest responsivity of 5221.1% was obtained. This result was attributed to the spillover effect and the formation of the p-n heterojunction, which increased more ionized-oxygen adsorption sites and promoted the reaction between NO2 gas and Ga2O3 nanorods. Furthermore, the NO2 gas sensor could detect the low NO2 concentration of 100 ppb and achieved a responsivity of 56.9%. The resulting NO2 gas sensor also exhibited excellent selectivity for detecting NO2 gas, with higher responsivity at a NO2 concentration of 10 ppm compared with that of the C2H5OH and NH3 concentrations of 100 ppm.

Investigation of High-Sensitivity NO2 Gas Sensors with Ga2O3 Nanorod Sensing Membrane Grown by Hydrothermal Synthesis Method

In this work, Ga₂O₃ nanorods were converted from GaOOH nanorods grown using the hydrothermal synthesis method as the sensing membranes of NO₂ gas sensors. Since a sensing membrane with a high surface-to-volume ratio is a very important issue for gas sensors, the thickness of the seed layer and the concentrations of the hydrothermal precursor gallium nitrate nonahydrate (Ga(NO₃)₃·9H₂O) and hexamethylenetetramine (HMT) were optimized to achieve a high surface-to-volume ratio in the GaOOH nanorods. The results showed that the largest surface-to-volume ratio of the GaOOH nanorods could be obtained using the 50-nm-thick SnO₂ seed layer and the Ga(NO₃)₃·9H₂O/HMT concentration of 12 mM/10 mM. In addition, the GaOOH nanorods were converted to Ga₂O₃ nanorods by thermal annealing in a pure N₂ ambient atmosphere for 2 h at various temperatures of 300 °C, 400 °C, and 500 °C, respectively. Compared with the Ga₂O₃ nanorod sensing membranes annealed at 300 °C and 500 °C, the NO₂ gas sensors using the 400 °C-annealed Ga₂O₃ nanorod sensing membrane exhibited optimal responsivity of 1184.6%, a response time of 63.6 s, and a recovery time of 135.7 s at a NO₂ concentration of 10 ppm. The low NO₂ concentration of 100 ppb could be detected by the Ga₂O₃ nanorod-structured NO₂ gas sensors and the achieved responsivity was 34.2%.

ITO Thin Films for Low-Resistance Gas Sensors

Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and were annealed at temperatures of 500 °C and 600 °C. The structural, optical, electrically conductive and gas-sensitive properties of indium tin oxide thin films were studied. The possibility of developing sensors with low nominal resistance and relatively high sensitivity to gases was shown. The resistance of indium tin oxide thin films annealed at 500 °C in pure dry air did not exceed 350 Ohms and dropped by about 2 times when increasing the annealing temperature to 100 °C. Indium tin oxide thin films annealed at 500 °C were characterized by high sensitivity to gases. The maximum responses to 2000 ppm hydrogen, 1000 ppm ammonia and 100 ppm nitrogen dioxide for these films were 2.21 arbitrary units, 2.39 arbitrary units and 2.14 arbitrary units at operating temperatures of 400 °C, 350 °C and 350 °C, respectively. These films were characterized by short response and recovery times. The drift of indium tin oxide thin-film gas-sensitive characteristics during cyclic exposure to reducing gases did not exceed 1%. A qualitative model of the sensory effect is proposed.

Electrical and Gas Sensor Properties of Nb(V) Doped Nanocrystalline β-Ga2O3

A flame spray pyrolysis (FSP) technique was applied to obtain pure and Nb(V)-doped nanocrystalline β-Ga₂O₃, which were further studied as gas sensor materials. The obtained samples were characterized with XRD, XPS, TEM, Raman spectroscopy and BET method. Formation of GaNbO₄ phase is observed at high annealing temperatures. Transition of Ga(III) into Ga(I) state during Nb(V) doping prevents donor charge carriers generation and hinders considerable improvement of electrical and gas sensor properties of β-Ga₂O₃. Superior gas sensor performance of obtained ultrafine materials at lower operating temperatures compared to previously reported thin film Ga₂O₃ materials is shown.

Gallium Oxide for Gas Sensor Applications: A Comprehensive Review

Ga₂O₃ has emerged as a promising ultrawide bandgap semiconductor for numerous device applications owing to its excellent material properties. In this paper, we present a comprehensive review on major advances achieved over the past thirty years in the field of Ga₂O₃-based gas sensors. We begin with a brief introduction of the polymorphs and basic electric properties of Ga₂O₃. Next, we provide an overview of the typical preparation methods for the fabrication of Ga₂O₃-sensing material developed so far. Then, we will concentrate our discussion on the state-of-the-art Ga₂O₃-based gas sensor devices and put an emphasis on seven sophisticated strategies to improve their gas-sensing performance in terms of material engineering and device optimization. Finally, we give some concluding remarks and put forward some suggestions, including (i) construction of hybrid structures with two-dimensional materials and organic polymers, (ii) combination with density functional theoretical calculations and machine learning, and (iii) development of optical sensors using the characteristic optical spectra for the future development of novel Ga₂O₃-based gas sensors.

Ab Initio Studies of Work Function Changes of CO Adsorption on Clean and Pd-Doped ZnGa2O4(111) Surfaces for Gas Sensors

We performed first-principles calculations to study the adsorption of the CO molecules on both clean and Pd-doped ZnGa2O4(111) surfaces. The adsorption reaction and work function of the CO adsorption models were examined. The CO molecules on the clean and Pd-doped ZnGa2O4(111) surfaces exhibit maximum work function changes of −0.55 eV and −0.79 eV, respectively. The work function change of Pd-doped ZnGa2O4(111) for detecting CO is 1.43 times higher than that of the clean ZnGa2O4(111). In addition, the adsorption energy is also significantly reduced from −1.88 eV to −3.36 eV without and with Pd atoms, respectively. The results demonstrate ZnGa2O4-based gas sensors doped by palladium can improve the sensitivity of detecting CO molecules.

P-type Inversion at the Surface of β-Ga2O3 Epitaxial Layer Modified with Au Nanoparticles

The electric properties and chemical and thermal stability of gallium oxide β-Ga₂O₃ make it a promising material for a wide variety of electronic devices, including chemiresistive gas sensors. However, p-type doping of β-Ga₂O₃ still remains a challenge. A β-Ga₂O₃ epitaxial layer with a highly developed surface was synthesized on gold electrodes on a Al₂O₃ substrate via a Halide Vapor Phase Epitaxy (HVPE) method. The epitaxial layer was impregnated with an aqueous colloidal solution of gold nanoparticles with an average diameter of Au nanoparticle less than 5 nm. Electrical impedance of the layer was measured before and after modification with the Au nanoparticles in an ambient atmosphere, in dry nitrogen, and in air containing dimethyl sulfide C₂H₆S (DMS). After the impregnation of the β-Ga₂O₃ epitaxial layer with Au nanoparticles, its conductance increased, and its electric response to air containing DMS had been inversed. The introduction of Au nanoparticles at the surface of the metal oxide was responsible for the formation of an internal depleted region and p-type conductivity at the surface.

Intumescent flame retardants inspired template-assistant synthesis of N/P dual-doped three-dimensional porous carbons for high-performance supercapacitors

Heteroatom-doped three-dimensional (3D) porous carbons possess great potential as promising electrodes for high-performance supercapacitors. Inspired by the inherent features of intumescent flame retardants (IFRs) with universal availability, rich heteroatoms and easy thermal-carbonization to form porous carbons, herein we proposed a self-assembling and template self-activation strategy to produce N/P dual-doped 3D porous carbons by nano-CaCO₃ template-assistant carbonization of IFRs. The IFRs-derived carbon exhibited large specific surface area, well-balanced hierarchical porosity, high N/P contents and interconnected 3D skeleton. Benefitting from these predominant characteristics on structure and composition, the assembled supercapacitive electrodes exhibited outstanding electrochemical performances. In three-electrode 6 M KOH system, it delivered high specific capacitances of 407 F g^-1 at 0.5 A g^-1, and good rate capability of 61.2% capacitance retention at 20 A g^-1. In two-electrode organic EMIMBF₄/PC system, its displayed high energy density of 62.8 Wh kg^-1 at a power density of 748.4 W kg^-1, meanwhile it had excellent cycling stability with 84.7% capacitance retention after 10,000 cycles. To our best knowledge, it is the first example to synthesize porous carbon from IFRs precursor. Thus, the current work paved a novel and low-cost way for the production of high-valued carbon material, and expanded its application for high-performance energy storage devices.