First-Principles Study on the Effect of Strain on Single-Layer Molybdenum Disulfide

Novel two-dimensional HfSi2N4 monolayer with excellent bandgap modulation and electronic properties modulation

The bandgap modulation and electronic properties modulation of two-dimensional HfSi2N4 monolayer induced by strain, electric field and atomic adsorption are studied by first principles. The HfSi2N4 monolayer was found to be dynamically, thermally, and mechanically stable at equilibrium, and it is a direct semiconductor with a bandgap of 1.87 eV. The bandgap of the HfSi2N4 monolayer can be precisely modulated by strain. Under the action of strain, HfSi2N4 monolayer not only transforms from direct semiconductor to indirect semiconductor, but also improves the absorption of visible light. An external electric field in the 0-0.5 eV/Å range can also modulate the bandgap of HfSi2N4 monolayer from 1.87 eV to 0 eV, and most importantly, at an external electric field of 0.5 eV/Å, HfSi2N4 monolayer shows the characteristics of spin gapless semiconductor. The calculated adsorption energy shows that the structures of H, O and F atoms adsorbed by HfSi2N4 monolayer can all exist stably. The bandgap of the configuration after adsorption of O and F atoms is significantly reduced compared with that of HfSi2N4 monolayer. Furthermore, the HfSi2N4 monolayer after adsorption of H and F atoms is transformed into a magnetic semiconductor. METHOD: All calculations were performed using Vienna ab initial simulation package, The electronic structure, mechanical properties, electronic properties and other properties were carried out using generalized gradient approximation (GGA-PBE), supplemented by HSE06 and GGA + U. The total-energy and force convergence are less than 10-6 eV and 0.001 eV/Å, respectively. The vacuum on the z-axis is selected 20 Å. The vdW interactions were corrected using the Grimme scheme (DFT-D3).

Optimizing optoelectronic performance: impact of polar-terminated zinc oxide on MoS2Van der Waals heterostructure

We report a study on the stability, optical absorption and modulated electronic properties of the ZnO(0001-) and MoS2Van der Waals heterostructure using density functional theory. We employed a supercell of ZnO/MoS2hybrid and specifically explored the effects of creating an interface with the O-terminated face of ZnO while considering the interlayer interaction. We observed an increase in the band gap opening of MoS2within the hybrid structure (1.37 eV) is primarily attributed to in-plane strain, with minimal contribution from the identified charge transfer occurring from MoS2to ZnO. Notably, the hybrid structure exhibits enhanced photo absorption in the visible and near-infrared regions, highlighting their significance for optoelectronic applications.

Nonlinear Static Bending and Forced Vibrations of Single-Layer MoS2 with Thermal Stress

Single-layer molybdenum disulfide (MoS2) has been a research focus in recent years owing to its extensive potential applications. However, how to model the mechanical properties of MoS2 is an open question. In this study, we investigate the nonlinear static bending and forced vibrations of MoS2, subjected to boundary axial and thermal stresses using modified plate theory with independent in-plane and out-of-plane stiffnesses. First, two nonlinear ordinary differential equations are obtained using the Galerkin method to represent the nonlinear vibrations of the first two symmetrical modes. Second, we analyze nonlinear static bending by neglecting the inertial and damping terms of the two equations. Finally, we explore nonlinear forced vibrations using the method of multiple scales for the first- and third-order modes, and their 1:3 internal resonance. The main results are as follows: (1) The thermal stress and the axial compressive stress reduce the MoS2 stiffness significantly. (2) The bifurcation points of the load at the low-frequency primary resonance are much smaller than those at high frequency under single-mode vibrations. (3) Temperature has a more remarkable influence on the higher-order mode than the lower-order mode under the 1:3 internal resonance.

Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors

Molybdenum disulfide (MoS₂) has distinctive electronic and mechanical properties which make it a highly prospective material for use as a channel in upcoming nanoelectronic devices. An analytical modeling framework was used to investigate the I-V characteristics of field-effect transistors based on MoS₂. The study begins by developing a ballistic current equation using a circuit model with two contacts. The transmission probability, which considers both the acoustic and optical mean free path, is then derived. Next, the effect of phonon scattering on the device was examined by including transmission probabilities into the ballistic current equation. According to the findings, the presence of phonon scattering caused a decrease of 43.7% in the ballistic current of the device at room temperature when L = 10 nm. The influence of phonon scattering became more prominent as the temperature increased. In addition, this study also considers the impact of strain on the device. It is reported that applying compressive strain could increase the phonon scattering current by 13.3% at L = 10 nm at room temperature, as evaluated in terms of the electrons' effective masses. However, the phonon scattering current decreased by 13.3% under the same condition due to the existence of tensile strain. Moreover, incorporating a high-k dielectric to mitigate the impact of scattering resulted in an even greater improvement in device performance. Specifically, at L = 6 nm, the ballistic current was surpassed by 58.4%. Furthermore, the study achieved SS = 68.2 mV/dec using Al₂O₃ and an on-off ratio of 7.75 × 10⁴ using HfO₂. Finally, the analytical results were validated with previous works, showing comparable agreement with the existing literature.

Strain relaxation in monolayer MoS2 over flexible substrate

In this communication, we demonstrate uniaxial strain relaxation in monolayer (1L) MoS₂ transpires through cracks in both single and double-grain flakes. Chemical vapour deposition (CVD) grown 1L MoS₂ has been transferred onto polyethylene terephthalate (PET) and poly(dimethylsiloxane) (PDMS) substrates for low (∼1%) and high (1-6%) strain measurements. Both Raman and photoluminescence (PL) spectroscopy revealed strain relaxation via cracks in the strain regime of 4-6%. In situ optical micrographs show the formation of large micron-scale cracks along the strain axis and ex situ atomic force microscopy (AFM) images reveal the formation of smaller lateral cracks due to the strain relaxation. Finite element simulation has been employed to estimate the applied strain efficiency as well as to simulate the strain distribution for MoS₂ flakes. The present study reveals the uniaxial strain relaxation mechanism in 1L MoS₂ and paves the way for exploring strain relaxation in other transition metal dichalcogenides (TMDCs) as well as their heterostructures.

Investigating the magnetic, thermoelectric, and thermodynamic properties of the GeCH3 single-layer considering external magnetic field, doping, and strain

Extensive research is ongoing to improve the performance of thermoelectric and thermodynamic properties of the material because preventing energy waste is vital in modern society. Herein, we study the thermoelectric and thermodynamic properties of the GeCH₃ single-layer (SL) under the influence of an external magnetic field, electron doping, and tensile and compressive biaxial strain by using the tight-binding and equilibrium Green's function method. We found that the electronic heat capacity, magnetic susceptibility, and electronic thermal and electrical conductivity increase by employing an external magnetic field, electron doping, and tensile biaxial strain. However, compressive biaxial strain yields a decrease in thermoelectric and thermodynamic properties. The results of our study show that the GeCH₃ SL is paramagnetic. The results presented here that the GeCH₃ SL is a suitable alternative for use in thermoelectric, spintronic, and valleytronics devices.

Studies of the Structure and Optical Properties of BaSrMgWO6 Thin Films Deposited by a Spin-Coating Method

Highly transparent thin films with the chemical formula BaSrMgWO₆ were deposited by spin coating using a solution of nitrates of Ba, Sr, and Mg and ammonium paratungstate in dimethylformamide with a Ba:Sr:Mg:W ratio = 1:1:1:1. XRD, SEM, EDX, and XPS investigations evidenced that annealing at 800 °C for 1 h results in an amorphous structure having a precipitate on its surface, and that supplementary annealing at 850 °C for 45 min forms a nanocrystalline structure and dissolves a portion of the precipitates. A textured double perovskite cubic structure (61.9%) was found, decorated with tetragonal and cubic impurity phases (12.7%), such as BaO₂, SrO₂, and MgO, and an under-stoichiometric phase (24.4%) with the chemical formula Ba_2-(x+y) Sr_xMg_yWO₅. From transmittance measurements, the values of the optical band gap were estimated for the amorphous (E_gdir = 5.21 eV, E_gind = 3.85 eV) and nanocrystalline (E_gdir = 4.69 eV, E_gind = 3.77 eV) phases. The presence of a lattice disorder was indicated by the high Urbach energy values and weak absorption tail energies. A decrease in their values was observed and attributed to the crystallization process, lattice strain diminution, and cation redistribution.