Efficient and Stable Perovskite Solar Cells Based on Inorganic Hole Transport Materials

Critical Review of Cu-Based Hole Transport Materials for Perovskite Solar Cells: From Theoretical Insights to Experimental Validation

Despite the remarkable efficiency of perovskite solar cells (PSCs), long-term stability remains the primary barrier to their commercialization. The prospect of enhancing stability by substituting organic transport layers with suitable inorganic compounds, particularly Cu-based inorganic hole-transport materials (HTMs), holds promise due to their high valence band maximum (VBM) aligning with perovskite characteristics. This review assesses the advantages and disadvantages of these five types of Cu-based HTMs. Although Cu-based binary oxides and chalcogenides face narrow bandgap issues, the "chemical modulation of the valence band" (CMVB) strategy has successfully broadened the bandgap for Cu-based ternary oxides and chalcogenides. However, Cu-based ternary oxides encounter challenges with low mobility, and Cu-based ternary chalcogenides face mismatches in VBM alignment with perovskites. Cu-based binary halides, especially CuI, exhibit excellent properties such as wider bandgap, high mobility, and defect tolerance, but their stability remains a concern. These limitations of single anion compounds are insightfully discussed, offering solutions from the perspective of practical application. Future research can focus on Cu-based composite anion compounds, which merge the advantages of single anion compounds. Additionally, mixed-cation chalcogenides such as CuxM1-xS enable the customization of HTM properties by selecting and adjusting the proportions of cation M.

Complex Metal Oxides as Emerging Inorganic Hole-Transporting Materials for Perovskite Solar Cells

Perovskite solar cells (PSCs) have achieved revolutionary progress during the past decades with a rapidly boosting rate in power conversion efficiencies from 3.8% to 26.1%. However, high-efficiency PSCs with organic hole-transporting materials (HTMs) suffer from inferior long-term stability and high costs. The replacement of organic HTMs with inorganic counterparts such as metal oxides can solve the above-mentioned problems to realize highly robust and cost-effective PSCs. Nevertheless, the widely used simple metal oxide-based HTMs are limited by the low conductivity and poor light transmittance due to the fixed atomic environment. As an emerging family of inorganic HTMs, complex metal oxides with superior structural/compositional flexibility have attracted rapidly increasing interest recently, showing superior carrier conductivity/mobility and superb light transmittance. Herein, the recent advancements in the design and development of complex metal oxide-based HTMs for high-performance PSCs are summarized by emphasizing the superiority of complex metal oxides as HTMs over simple metal oxide-based counterparts. Consequently, several distinct strategies for the design of complex metal oxide-based HTMs are proposed. Last, the future directions and remaining challenges of inorganic complex metal oxide-based HTMs for PSCs are also presented. This review aims to provide valuable guidelines for the further advancements of robust, high-efficiency, and low-cost PSCs.

Evaluating the influence of novel charge transport materials on the photovoltaic properties of MASnI3 solar cells through SCAPS-1D modelling

In recent decades, substantial advancements have been made in photovoltaic technologies, leading to impressive power conversion efficiencies (PCE) exceeding 25% in perovskite solar cells (PSCs). Tin-based perovskite materials, characterized by their low band gap (1.3 eV), exceptional optical absorption and high carrier mobility, have emerged as promising absorber layers in PSCs. Achieving high performance and stability in PSCs critically depends on the careful selection of suitable charge transport layers (CTLs). This research investigates the effects of five copper-based hole transport materials and two carbon-based electron transport materials in combination with methyl ammonium tin iodide (MASnI3) through numerical modelling in SCAPS-1D. The carbon-based CTLs exhibit excellent thermal conductivity and mechanical strength, while the copper-based CTLs demonstrate high electrical conductivity. The study comprehensively analyses the influence of these CTLs on PSC performance, including band alignment, quantum efficiency, thickness, doping concentration, defects and thermal stability. Furthermore, a comparative analysis is conducted on PSC structures employing both p-i-n and n-i-p configurations. The highest-performing PSCs are observed in the inverted structures of CuSCN/MASnI3/C60 and CuAlO2/MASnI3/C60, achieving PCE of 23.48% and 25.18%, respectively. Notably, the planar structures of Cu2O/MASnI3/C60 and CuSbS2/MASnI3/C60 also exhibit substantial PCE, reaching 20.67% and 20.70%, respectively.

Analysis of Hazy Ga- and Zr-Co-Doped Zinc Oxide Films Prepared with Atmospheric Pressure Plasma Jet Systems

Co-doped ZnO thin films have attracted much attention in the field of transparent conductive oxides (TCOs) in solar cells, displays, and other transparent electronics. Unlike conventional single-doped ZnO, co-doped ZnO utilizes two different dopant elements, offering enhanced electrical properties and more controllable optical properties, including transmittance and haze; however, most previous studies focused on the electrical properties, with less attention paid to obtaining high haze using co-doping. Here, we prepare high-haze Ga- and Zr-co-doped ZnO (GZO:Zr or ZGZO) using atmospheric pressure plasma jet (APPJ) systems. We conduct a detailed analysis to examine the interplay between Zr concentrations and film properties. UV-Vis spectroscopy shows a remarkable haze factor increase of 7.19% to 34.8% (+384%) for the films prepared with 2 at% Zr and 8 at% Ga precursor concentrations. EDS analysis reveals Zr accumulation on larger and smaller particles, while SIMS links particle abundance to impurity uptake and altered electrical properties. XPS identifies Zr mainly as ZrO2 because of lattice stress from Zr doping, forming clusters at lattice boundaries and corroborating the SEM findings. Our work presents a new way to fabricate Ga- and Zr-co-doped ZnO for applications that require low electrical resistivity, high visible transparency, and high haze.

Geometric Optimization of Perovskite Solar Cells with Metal Oxide Charge Transport Layers

Perovskite solar cells (PSCs) are a promising area of research among different new generations of photovoltaic technologies. Their manufacturing costs make them appealing in the PV industry compared to their alternatives. Although PSCs offer high efficiency in thin layers, they are still in the development phase. Hence, optimizing the thickness of each of their layers is a challenging research area. In this paper, we investigate the effect of the thickness of each layer on the photoelectric parameters of n-ZnO/p-CH₃NH₃PbI₃/p-NiO_x solar cell through various simulations. Using the Sol-Gel method, PSC structure can be formed in different thicknesses. Our aim is to identify a functional connection between those thicknesses and the optimum open-circuit voltage and short-circuit current. Simulation results show that the maximum efficiency is obtained using a perovskite layer thickness of 200 nm, an electronic transport layer (ETL) thickness of 60 nm, and a hole transport layer (HTL) thickness of 20 nm. Furthermore, the output power, fill factor, open-circuit voltage, and short-circuit current of this structure are 18.9 mW/cm², 76.94%, 1.188 V, and 20.677 mA/cm², respectively. The maximum open-circuit voltage achieved by a solar cell with perovskite, ETL and HTL layer thicknesses of (200 nm, 60 nm, and 60 nm) is 1.2 V. On the other hand, solar cells with the following thicknesses, 800 nm, 80 nm, and 40 nm, and 600 nm, 80 nm, and 80 nm, achieved a maximum short-circuit current density of 21.46 mA/cm² and a fill factor of 83.35%. As a result, the maximum value of each of the photoelectric parameters is found in structures of different thicknesses. These encouraging results are another step further in the design and manufacturing journey of PSCs as a promising alternative to silicon PV.

In Silico Investigation of the Impact of Hole-Transport Layers on the Performance of CH3NH3SnI3 Perovskite Photovoltaic Cells

Perovskite solar cells represent one of the recent success stories in photovoltaics. The device efficiency has been steadily increasing over the past years, but further work is needed to enhance the performance, for example, through the reduction of defects to prevent carrier recombination. SCAPS-1D simulations were performed to assess efficiency limits and identify approaches to decrease the impact of defects, through the selection of an optimal hole-transport material and a hole-collecting electrode. Particular attention was given to evaluation of the influence of bulk defects within light-absorbing CH3NH3SnI3 layers. In addition, the study demonstrates the influence of interface defects at the TiO2/CH3NH3SnI3 (IL1) and CH3NH3SnI3/HTL (IL2) interfaces across the similar range of defect densities. Finally, the optimal device architecture TiO2/CH3NH3SnI3/Cu2O is proposed for the given absorber layer using the readily available Cu2O hole-transporting material with PCE = 27.95%, FF = 84.05%, VOC = 1.02 V and JSC = 32.60 mA/cm2, providing optimal performance and enhanced resistance to defects.