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Ding Y, Xiong S, Sun L, Wang Y, Zhou Y, Li Y, Peng J, Fukuda K, Someya T, Liu R, Zhang X. Metal nanowire-based transparent electrode for flexible and stretchable optoelectronic devices. Chem Soc Rev 2024; 53:7784-7827. [PMID: 38953906 DOI: 10.1039/d4cs00080c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/04/2024]
Abstract
High-quality transparent electrodes are indispensable components of flexible optoelectronic devices as they guarantee sufficient light transparency and electrical conductivity. Compared to commercial indium tin oxide, metal nanowires are considered ideal candidates as flexible transparent electrodes (FTEs) owing to their superior optoelectronic properties, excellent mechanical flexibility, solution treatability, and higher compatibility with semiconductors. However, certain key challenges associated with material preparation and device fabrication remain for the practical application of metal nanowire-based electrodes. In this review, we discuss state-of-the-art solution-processed metal nanowire-based FTEs and their applications in flexible and stretchable optoelectronic devices. Specifically, the important properties of FTEs and a cost-benefit analysis of existing technologies are introduced, followed by a summary of the synthesis strategy, key properties, and fabrication technologies of the nanowires. Subsequently, we explore the applications of metal-nanowire-based FTEs in different optoelectronic devices including solar cells, photodetectors, and light-emitting diodes. Finally, the current status, future challenges, and emerging strategies in this field are presented.
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Affiliation(s)
- Yu Ding
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Institute of Functional Nano and Soft Materials (FUNSOM) and College of Energy, Soochow University, Suzhou 215006, P. R. China.
| | - Sixing Xiong
- Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
| | - Lulu Sun
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Yiying Wang
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Institute of Functional Nano and Soft Materials (FUNSOM) and College of Energy, Soochow University, Suzhou 215006, P. R. China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215006, P. R. China
| | - Yinhua Zhou
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Yaowen Li
- College of Chemistry, Soochow University, Suzhou 215123, P. R. China
| | - Jun Peng
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Institute of Functional Nano and Soft Materials (FUNSOM) and College of Energy, Soochow University, Suzhou 215006, P. R. China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215006, P. R. China
| | - Kenjiro Fukuda
- Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Takao Someya
- Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Ruiyuan Liu
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Institute of Functional Nano and Soft Materials (FUNSOM) and College of Energy, Soochow University, Suzhou 215006, P. R. China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215006, P. R. China
| | - Xiaohong Zhang
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Institute of Functional Nano and Soft Materials (FUNSOM) and College of Energy, Soochow University, Suzhou 215006, P. R. China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215006, P. R. China
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Chen S, Zhao C, Zhou X. Wet Film Leveling for Promoting the Uniformity and Conductivity of Silver Nanowire Transparent Electrode. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:1761-1773. [PMID: 38207108 DOI: 10.1021/acs.langmuir.3c02987] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/13/2024]
Abstract
Wet film leveling can greatly promote film uniformity. However, in the field of metal nanowire, wet film leveling is rarely mentioned. For low-viscosity inks like metal nanowire ink, how to realize wet film leveling is still unclear. Herein, we study the wet film leveling of silver nanowire ink and systematically investigate the relationship between leveling effect and influence factors: (1) there is a uniformity-promotion limit for traditional methods, while wet film leveling can break through this limit and further promote the film uniformity; (2) for wet film leveling, lowering ink's surface tension has no effect, and eliminating surface tension gradient by high-surface-tension leveling agent is the main task; (3) leveling process includes wet film destruction process and ink reflow process; (4) in the destruction process, the leveling-agent solubility and quantity dominate the leveling effect, while the influence of surface tension is little; (5) for solubility and quantity, there is a suitable range to realize optimum leveling effect, and the leveling effect exhibits a contrary relationship with the solubility in a suitable range (2-11%); (6) in the reflow process, the main influence factor is ink viscosity, and the leveling effect exhibits a contrary relationship with ink viscosity. After being leveled by 1.5% n-pentanol, the sheet resistance and sheet-resistance variation coefficient of film decrease from 38.3 Ω/sq/3.83% to 25.7 Ω/sq/1.88%. Further study reveals that the film improvement is not from the ink wettability and drying. Above theoretical results possess certain universality for film preparation by a wet process and can be used by the science and industry field.
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Affiliation(s)
- Shanyong Chen
- College of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
- School of Material Science and Engineering, Chongqing University of Arts and Sciences, Yongchuan 402160, China
| | - Cong Zhao
- College of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Xianju Zhou
- Department of Mathematics and Physics, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
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