MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates

Application of Graphene-Based Materials

This Topic on the "Application of Graphene-Based Materials", which consists of a total of twenty-six articles, including two review articles, written by research groups of experts in the field, considers the most recent research and trends on the synthesis and characterization of graphene-based materials, including nanohybrids, intended for a vast array of high-demanding technological applications, namely batteries/fuel cells, aerogels, laser technology, sensors, electronic/magnetic devices, catalysts, etc [...].

Epitaxial Lateral Overgrowth of GaN on a Laser-Patterned Graphene Mask

Epitaxial lateral overgrowth (ELO) of GaN epilayers on a sapphire substrate was studied by using a laser-patterned graphene interlayer. Monolayer graphene was transferred onto the sapphire substrate using a wet transfer technique, and its quality was confirmed by Raman spectroscopy. The graphene layer was ablated using a femtosecond laser, which produced well-defined patterns without damaging the underlying sapphire substrate. Different types of patterns were produced for ELO of GaN epilayers: stripe patterns were ablated along the [1¯100]sapphire and [112¯0]sapphire directions, a square island pattern was ablated additionally. The impact of the graphene pattern on GaN nucleation was analyzed by scanning electron microscopy. The structural quality of GaN epilayers was studied by cathodoluminescence. The investigation shows that the laser-ablated graphene can be integrated into the III-nitride growth process to improve crystal quality.

Tiling the Silicon for Added Functionality: PLD Growth of Highly Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface

The application of two-dimensional (2D) materials has alleviated a number of challenges of traditional epitaxy and pushed forward the integration of dissimilar materials. Besides acting as a seed layer for van der Waals epitaxy, the 2D materials─being atom(s) thick─have also enabled wetting transparency in which the potential field of the substrate, although partially screened, is still capable of imposing epitaxial overgrowth. One of the crucial steps in this technology is the preservation of the quality of 2D materials during and after their transfer to a substrate of interest. In the present study, we show that by honing the achievements of traditional epitaxy and wet chemistry a hybrid approach can be devised that offers a unique perspective for the integration of functional oxides with a silicon platform. It is based on SrO-assisted deoxidation and controllable coverage of silicon surface with a layer(s) of spin-coated graphene oxide, thus simultaneously allowing both direct and van der Waals epitaxy of SrTiO₃ (STO). We were able to grow a high-quality STO pseudo-substrate suitable for further overgrowth of functional oxides, such as PbZr_1-xTi_xO₃ (PZT). Given that the quality of the films grown on a reduced graphene oxide-buffer layer was almost identical to that obtained on SiC-derived graphene, we believe that this approach may provide new routes for direct and "remote" epitaxy or layer-transfer techniques of dissimilar material systems.