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Lin H, Xing S, Jiang A, Li M, Chen Q, Wang Z, Jiang L, Li H, Wang J, Zhou C. Controlled Synthesis of Large-Area Oriented ZnO Nanoarrays. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1028. [PMID: 38921904 PMCID: PMC11206485 DOI: 10.3390/nano14121028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2024] [Revised: 06/08/2024] [Accepted: 06/10/2024] [Indexed: 06/27/2024]
Abstract
Large-area oriented ZnO nanoarrays (including nanowire, nanorod, and nanotube) on ITO glass substrates are synthesized via the simple hydrothermal, electrodeposition, and electrochemical etching approach. The morphology of ZnO nanoarrays is controlled by adjusting the reaction temperature, reaction time, and current density. The scanning and transmission electron microscopy (SEM and TEM) results indicate the successful preparation of large-area oriented ZnO nanoarrays with different types, and the energy-dispersive X-microanalysis spectrum (EDS) and X-ray diffraction (XRD) results confirm that the composition of the obtained nanoarrays is ZnO. More importantly, the as-prepared ZnO nanotube arrays are observed with about a 40% increase in ultraviolet absorption intensity compared to the ZnO nanowire/nanorod arrays, due to having larger specific surface areas. The as-prepared different types of ZnO nanoarrays have great potential for applications in low-cost and high-performance optoelectronic devices.
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Affiliation(s)
- Haowei Lin
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (S.X.); (A.J.); (M.L.); (Q.C.); (Z.W.); (L.J.); (H.L.); (J.W.); (C.Z.)
- Henan International Joint Laboratory of Nano-Photoelectric Magnetic Materials, Henan University of Technology, Zhengzhou 450001, China
| | - Shibo Xing
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (S.X.); (A.J.); (M.L.); (Q.C.); (Z.W.); (L.J.); (H.L.); (J.W.); (C.Z.)
| | - Ao Jiang
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (S.X.); (A.J.); (M.L.); (Q.C.); (Z.W.); (L.J.); (H.L.); (J.W.); (C.Z.)
| | - Mingxuan Li
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (S.X.); (A.J.); (M.L.); (Q.C.); (Z.W.); (L.J.); (H.L.); (J.W.); (C.Z.)
| | - Qing Chen
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (S.X.); (A.J.); (M.L.); (Q.C.); (Z.W.); (L.J.); (H.L.); (J.W.); (C.Z.)
| | - Zhenling Wang
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (S.X.); (A.J.); (M.L.); (Q.C.); (Z.W.); (L.J.); (H.L.); (J.W.); (C.Z.)
| | - Lei Jiang
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (S.X.); (A.J.); (M.L.); (Q.C.); (Z.W.); (L.J.); (H.L.); (J.W.); (C.Z.)
| | - Huiying Li
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (S.X.); (A.J.); (M.L.); (Q.C.); (Z.W.); (L.J.); (H.L.); (J.W.); (C.Z.)
| | - Jie Wang
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (S.X.); (A.J.); (M.L.); (Q.C.); (Z.W.); (L.J.); (H.L.); (J.W.); (C.Z.)
| | - Chenchen Zhou
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (S.X.); (A.J.); (M.L.); (Q.C.); (Z.W.); (L.J.); (H.L.); (J.W.); (C.Z.)
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Zhang N, Cui M, Zhou J, Shao Z, Gao X, Liu J, Sun R, Zhang Y, Li W, Li X, Yao J, Gao F, Feng W. High-Performance Self-Powered Photoelectrochemical Ultraviolet Photodetectors Based on an In 2O 3 Nanocube Film. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19167-19174. [PMID: 38569197 DOI: 10.1021/acsami.4c00801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/05/2024]
Abstract
Ultraviolet photodetectors (UV PDs) have attracted significant attention due to their wide range of applications, such as underwater communication, biological analysis, and early fire warning systems. Indium oxide (In2O3) is a candidate for developing high-performance photoelectrochemical (PEC)-type UV PDs owing to its high UV absorption and good stability. However, the self-powered photoresponse of the previously reported In2O3-based PEC UV PDs is unsatisfactory. In this work, high-performance self-powered PEC UV PDs were constructed by using an In2O3 nanocube film (NCF) as a photoanode. In2O3 NCF photoanodes were synthesized on FTO by using hydrothermal methods with a calcining process. The influence of the electrolyte concentration, bias potential, and irradiation light on the photoresponse properties was systematically studied. In2O3 NCF PEC UV PDs exhibit outstanding self-powered photoresponses to 365 nm UV light with a high responsivity of 44.43 mA/W and fast response speed (20/30 ms) under zero bias potential, these results are superior to those of previously reported In2O3-based PEC UV PDs. The improved self-powered photoresponse is attributed to the higher photogenerated carrier separation efficiency and faster charge transport of the in-situ grown In2O3 NCF. In addition, these PDs exhibit excellent multicycle stability, maintaining the photocurrent at 98.69% of the initial value after 700 optical switching cycles. Therefore, our results prove the great promise of In2O3 in self-powered PEC UV PDs.
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Affiliation(s)
- Nana Zhang
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Mengqi Cui
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Junxin Zhou
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Zhitao Shao
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Xinyu Gao
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Jiaming Liu
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Ruyu Sun
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Yuan Zhang
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Wenhui Li
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Xinghan Li
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Jing Yao
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
| | - Feng Gao
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
| | - Wei Feng
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
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Gou R, Shi C, Zhou S, Huang Z, Ouyang Z, He S, Zhao J, Xiao Y, Lei S, Cheng B. Self-Powered Photodetector Based on Ag/CH 3NH 3PbI 3/C Asymmetric Dual-Terminal Device. ACS APPLIED MATERIALS & INTERFACES 2023; 15:54863-54874. [PMID: 37966314 DOI: 10.1021/acsami.3c13839] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2023]
Abstract
CH3NH3PbI3 is capable of exhibiting a superior photoresponse to visible light, but its self-powered devices are typically formed through p-n junctions. In this study, we fabricated a Ag/CH3NH3PbI3/C dual-terminal asymmetric electrode device using a single CH3NH3PbI3 perovskite micro/nanowire, enabling both the photoresponse and self-powered characteristics of CH3NH3PbI3 to visible light. Compared with traditional p-n junction devices, this simple device demonstrates enhanced interface photovoltaic effects by optimizing the combination of the Ag electrode with CH3NH3PbI3, resulting in superior self-powered characteristics. Under low bias voltage, the device achieves a significant on/off ratio of 103, with superior sensitivity and responsivity as well as a maximum rectification ratio of about 12. The photogenerated voltage and current reach approximately 0.8 V and 2 nA, respectively. This simple, compact, and self-powered asymmetric device exhibits great potential for applications in self-powered optoelectronics and wearable devices. This research provides a promising approach for recognizing and utilizing surface state effects in single nanoscale structures.
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Affiliation(s)
- Runna Gou
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
- School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China
| | - Cencen Shi
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031, P. R. China
| | - Shuanfu Zhou
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Zhikang Huang
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Zhiyong Ouyang
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031, P. R. China
- School of Materials and Energy, Jiangxi Science and Technology Normal University, Nanchang 330038, P. R. China
| | - Song He
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Jie Zhao
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Yanhe Xiao
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Shuijin Lei
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Baochang Cheng
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031, P. R. China
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Rogalski A, Bielecki Z, Mikołajczyk J, Wojtas J. Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids. SENSORS (BASEL, SWITZERLAND) 2023; 23:s23094452. [PMID: 37177656 PMCID: PMC10181614 DOI: 10.3390/s23094452] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2023] [Revised: 04/26/2023] [Accepted: 04/28/2023] [Indexed: 05/15/2023]
Abstract
The paper presents the long-term evolution and recent development of ultraviolet photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly described. Then the different types of detectors are presented, starting with the older photoemission detectors through photomultipliers and image intensifiers. More attention is paid to silicon and different types of wide band gap semiconductor photodetectors such as AlGaN, SiC-based, and diamond detectors. Additionally, Ga2O3 is considered a promising material for solar-blind photodetectors due to its excellent electrical properties and a large bandgap energy. The last part of the paper deals with new UV photodetector concepts inspired by new device architectures based on low-dimensional solid materials. It is shown that the evolution of the architecture has shifted device performance toward higher sensitivity, higher frequency response, lower noise, and higher gain-bandwidth products.
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Affiliation(s)
- Antoni Rogalski
- Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland
| | - Zbigniew Bielecki
- Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland
| | - Janusz Mikołajczyk
- Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland
| | - Jacek Wojtas
- Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland
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Sun F, Jiang H, Wang H, Zhong Y, Xu Y, Xing Y, Yu M, Feng LW, Tang Z, Liu J, Sun H, Wang H, Wang G, Zhu M. Soft Fiber Electronics Based on Semiconducting Polymer. Chem Rev 2023; 123:4693-4763. [PMID: 36753731 DOI: 10.1021/acs.chemrev.2c00720] [Citation(s) in RCA: 19] [Impact Index Per Article: 19.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/10/2023]
Abstract
Fibers, originating from nature and mastered by human, have woven their way throughout the entire history of human civilization. Recent developments in semiconducting polymer materials have further endowed fibers and textiles with various electronic functions, which are attractive in applications such as information interfacing, personalized medicine, and clean energy. Owing to their ability to be easily integrated into daily life, soft fiber electronics based on semiconducting polymers have gained popularity recently for wearable and implantable applications. Herein, we present a review of the previous and current progress in semiconducting polymer-based fiber electronics, particularly focusing on smart-wearable and implantable areas. First, we provide a brief overview of semiconducting polymers from the viewpoint of materials based on the basic concepts and functionality requirements of different devices. Then we analyze the existing applications and associated devices such as information interfaces, healthcare and medicine, and energy conversion and storage. The working principle and performance of semiconducting polymer-based fiber devices are summarized. Furthermore, we focus on the fabrication techniques of fiber devices. Based on the continuous fabrication of one-dimensional fiber and yarn, we introduce two- and three-dimensional fabric fabricating methods. Finally, we review challenges and relevant perspectives and potential solutions to address the related problems.
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Affiliation(s)
- Fengqiang Sun
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Hao Jiang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Haoyu Wang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Yueheng Zhong
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Yiman Xu
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Yi Xing
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Muhuo Yu
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
- Shanghai Key Laboratory of Lightweight Structural Composites, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Liang-Wen Feng
- Key Laboratory of Green Chemistry & Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu 610065, China
| | - Zheng Tang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
- Center for Advanced Low-dimension Materials, Donghua University, Shanghai 201620, China
| | - Jun Liu
- National Key Laboratory on Electromagnetic Environment Effects and Electro-Optical Engineering, Nanjing 210007, China
| | - Hengda Sun
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Hongzhi Wang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Gang Wang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Meifang Zhu
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
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Cui M, Shao Z, Qu L, Liu X, Yu H, Wang Y, Zhang Y, Fu Z, Huang Y, Feng W. MOF-Derived In 2O 3 Microrods for High-Performance Photoelectrochemical Ultraviolet Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:39046-39052. [PMID: 35981319 DOI: 10.1021/acsami.2c09968] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ultraviolet photodetectors (UV PDs) have attracted extensive attention owing to their wide applications, such as optical communication, missile tracking, and fire warning. Wide-bandgap metal-oxide semiconductor materials have become the focus of high-performance UV PD development owing to their unique photoelectric properties and good stability. Compared with other wide-bandgap materials, studies on indium oxide (In2O3)-based photoelectrochemical (PEC) UV PDs are rare. In this work, we explore the photoresponse of In2O3-based PEC UV PDs for the first time. In2O3 microrods (MRs) were synthesized by a hydrothermal method with subsequent annealing. In2O3 MR PEC PDs have good UV photoresponse, showing a high responsivity of 21.19 mA/W and high specific detectivity of 2.03 × 1010 Jones, which surpass most aqueous-type PEC UV PDs. Moreover, In2O3 MR PEC PDs have good multicycle and long-term stability irradiated by 365 nm. Our results prove that In2O3 holds great promise in high-performance PEC UV PDs.
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Affiliation(s)
- MengQi Cui
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Zhitao Shao
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - LiHang Qu
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Xin Liu
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Huan Yu
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Yunxia Wang
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Yunxiao Zhang
- Tianjin Jinhang Technical Physics Institute, Tianjin 300308, China
| | - Zhendong Fu
- Tianjin Jinhang Technical Physics Institute, Tianjin 300308, China
| | - Yuewu Huang
- College of Science, Harbin University of Science and Technology, Harbin 150080, China
| | - Wei Feng
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
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