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Fan Q, Xiao Q, Zhang H, Heng J, Xie M, Wei Z, Jia X, Liu X, Kang Z, Li CZ, Li S, Zhang T, Zhou Y, Huang J, Li Z. Highly Efficient and Stable ITO-Free Organic Solar Cells Based on Squaraine N-Doped Quaternary Bulk Heterojunction. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307920. [PMID: 37823840 DOI: 10.1002/adma.202307920] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2023] [Revised: 10/09/2023] [Indexed: 10/13/2023]
Abstract
Simultaneously achieving high efficiency and robust device stability remains a significant challenge for organic solar cells (OSCs). Solving this challenge is highly dependent on the film morphology of the bulk heterojunction (BHJ) photoactive blends; however, there is a lack of rational control strategy. Herein, it is shown that the molecular crystallinity and nanomorphology of nonfullerene-based BHJ can be effectively controlled by a squaraine-based doping strategy, leading to an increase in device efficiency from 17.26% to 18.5% when doping 2 wt% squaraine into the PBDB-TF:BTP-eC9:PC71 BM ternary BHJ. The efficiency is further improved to 19.11% (certified 19.06%) using an indium-tin-oxide-free column-patterned microcavity (CPM) architecture. Combined with interfacial modification, CPM quaternary OSC excitingly shows an extrapolated lifetime of ≈23 years based on accelerated aging test, with the mechanism behind enhanced stability well studied. Furthermore, a flexible OSC module with a high and stable efficiency of 15.2% and an overall area of 5 cm2 is successfully fabricated, exhibiting a high average output power for wearable electronics. This work demonstrates that OSCs with new design of BHJ and device architecture are highly promising to be practical relevance with excellent performance and stability.
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Affiliation(s)
- Qingshan Fan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, Provincial Key Laboratory for Human Disease Gene Study, Sichuan Provincial People's Hospital, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Qi Xiao
- Key Laboratory for Material Chemistry of Energy Conversion and Storage, Ministry of Education, School of Chemistry and Chemical Engineering, State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Hanqing Zhang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, Provincial Key Laboratory for Human Disease Gene Study, Sichuan Provincial People's Hospital, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Jinzi Heng
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, Provincial Key Laboratory for Human Disease Gene Study, Sichuan Provincial People's Hospital, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Meiling Xie
- Key Laboratory for Material Chemistry of Energy Conversion and Storage, Ministry of Education, School of Chemistry and Chemical Engineering, State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Zihao Wei
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, Provincial Key Laboratory for Human Disease Gene Study, Sichuan Provincial People's Hospital, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Xiaowei Jia
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, Provincial Key Laboratory for Human Disease Gene Study, Sichuan Provincial People's Hospital, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Xiaodong Liu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, Provincial Key Laboratory for Human Disease Gene Study, Sichuan Provincial People's Hospital, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Zhangli Kang
- National Institute of Measurement and Testing Technology, Chengdu, Sichuan, 610021, China
| | - Chang-Zhi Li
- State Key Laboratory of Silicon Materials, MOE Key Laboratory of Macromolecular Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Shibin Li
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, Provincial Key Laboratory for Human Disease Gene Study, Sichuan Provincial People's Hospital, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Ting Zhang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, Provincial Key Laboratory for Human Disease Gene Study, Sichuan Provincial People's Hospital, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Yu Zhou
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, Provincial Key Laboratory for Human Disease Gene Study, Sichuan Provincial People's Hospital, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
- Research Unit for Blindness Prevention of Chinese Academy of Medical Sciences (2019RU026), Sichuan Academy of Medical Sciences & Sichuan Provincial People's Hospital, Chengdu, Sichuan, 610072, China
| | - Jiang Huang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, Provincial Key Laboratory for Human Disease Gene Study, Sichuan Provincial People's Hospital, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
- Institute of Electronic and Information Engineering of UESTC in Guangdong, Guangdong, 523808, P. R. China
| | - Zhong'an Li
- Key Laboratory for Material Chemistry of Energy Conversion and Storage, Ministry of Education, School of Chemistry and Chemical Engineering, State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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Ha JW, Lee AY, Eun HJ, Kim JH, Ahn H, Park S, Lee C, Seo DW, Heo J, Yoon SC, Ko SJ, Kim JH. High Detectivity Near Infrared Organic Photodetectors Using an Asymmetric Non-Fullerene Acceptor for Optimal Nanomorphology and Suppressed Dark Current. ACS NANO 2023; 17:18792-18804. [PMID: 37781927 DOI: 10.1021/acsnano.3c03171] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/03/2023]
Abstract
Recently, the development of non-fullerene acceptors (NFAs) for near-infrared (NIR) organic photodetectors (OPDs) has attracted great interest due to their excellent NIR light absorption properties. Herein, we developed NFAs by substituting an electron-donating moiety (branched alkoxy thiophene (BAT)) asymmetrically (YOR1) and symmetrically (YOR2) for the Y6 framework. YOR1 exhibited nanoscale phase separation in a film blended with PTB7-Th. Moreover, substituting the BAT unit effectively extended the absorption wavelengths of YOR1 over 1000 nm by efficient intramolecular charge transfer and extension of the conjugation length. Consequently, YOR1-OPD exhibited significantly reduced dark current and improved responsivity by simultaneously satisfying optimal nanomorphology and significant suppression of charge recombination, resulting in 1.98 × 1013 and 3.38 × 1012 Jones specific detectivity at 950 and 1000 nm, respectively. Moreover, we successfully demonstrated the application of YOR1-OPD in highly sensitive photoplethysmography sensors using NIR light. This study suggests a strategic approach for boosting the overall performance of NIR OPDs targeting a 1000 nm light signal using an all-in-one (optimal morphology, suppressed dark current, and extended NIR absorption wavelength) NFA.
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Affiliation(s)
- Jong-Woon Ha
- Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Ah Young Lee
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, Republic of Korea
| | - Hyeong Ju Eun
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, Republic of Korea
| | - Jae-Hyun Kim
- Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Hyungju Ahn
- Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea
| | - Sungjun Park
- Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Changjin Lee
- Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Deok Won Seo
- Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Junseok Heo
- Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Sung Cheol Yoon
- Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Seo-Jin Ko
- Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Jong H Kim
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, Republic of Korea
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Gullifa G, Barone L, Papa E, Giuffrida A, Materazzi S, Risoluti R. Portable NIR spectroscopy: the route to green analytical chemistry. Front Chem 2023; 11:1214825. [PMID: 37818482 PMCID: PMC10561305 DOI: 10.3389/fchem.2023.1214825] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2023] [Accepted: 09/07/2023] [Indexed: 10/12/2023] Open
Abstract
There is a growing interest for cost-effective and nondestructive analytical techniques in both research and application fields. The growing approach by near-infrared spectroscopy (NIRs) pushes to develop handheld devices devoted to be easily applied for in situ determinations. Consequently, portable NIR spectrometers actually result definitively recognized as powerful instruments, able to perform nondestructive, online, or in situ analyses, and useful tools characterized by increasingly smaller size, lower cost, higher robustness, easy-to-use by operator, portable and with ergonomic profile. Chemometrics play a fundamental role to obtain useful and meaningful results from NIR spectra. In this review, portable NIRs applications, published in the period 2019-2022, have been selected to indicate starting references. These publications have been chosen among the many examples of the most recent applications to demonstrate the potential of this analytical approach which, not having the need for extraction processes or any other pre-treatment of the sample under examination, can be considered the "true green analytical chemistry" which allows the analysis where the sample to be characterized is located. In the case of industrial processes or plant or animal samples, it is even possible to follow the variation or evolution of fundamental parameters over time. Publications of specific applications in this field continuously appear in the literature, often in unfamiliar journal or in dedicated special issues. This review aims to give starting references, sometimes not easy to be found.
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Affiliation(s)
- G. Gullifa
- Department of Chemistry, “Sapienza” Università di Roma, Rome, Italy
| | - L. Barone
- Department of Chemistry, “Sapienza” Università di Roma, Rome, Italy
| | - E. Papa
- Department of Chemistry, “Sapienza” Università di Roma, Rome, Italy
| | - A. Giuffrida
- Department of Chemical Sciences, University of Catania, Catania, Italy
| | - S. Materazzi
- Department of Chemistry, “Sapienza” Università di Roma, Rome, Italy
| | - R. Risoluti
- Department of Chemistry, “Sapienza” Università di Roma, Rome, Italy
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Su ZC, Lin CF. Overcoming the Fermi-Level Pinning Effect in the Nanoscale Metal and Silicon Interface. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2193. [PMID: 37570511 PMCID: PMC10420943 DOI: 10.3390/nano13152193] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Revised: 07/17/2023] [Accepted: 07/26/2023] [Indexed: 08/13/2023]
Abstract
Silicon-based photodetectors are attractive as low-cost and environmentally friendly optical sensors. Also, their compatibility with complementary metal-oxide-semiconductor (CMOS) technology is advantageous for the development of silicon photonics systems. However, extending optical responsivity of silicon-based photodetectors to the mid-infrared (mid-IR) wavelength range remains challenging. In developing mid-IR infrared Schottky detectors, nanoscale metals are critical. Nonetheless, one key factor is the Fermi-level pinning effect at the metal/silicon interface and the presence of metal-induced gap states (MIGS). Here, we demonstrate the utilization of the passivated surface layer on semiconductor materials as an insulating material in metal-insulator-semiconductor (MIS) contacts to mitigate the Fermi-level pinning effect. The removal of Fermi-level pinning effectively reduces the Schottky barrier height by 12.5% to 16%. The demonstrated devices exhibit a high responsivity of up to 234 μA/W at a wavelength of 2 μm, 48.2 μA/W at 3 μm, and 1.75 μA/W at 6 μm. The corresponding detectivities at 2 and 3 μm are 1.17 × 108 cm Hz1/2 W-1 and 2.41 × 107 cm Hz1/2 W-1, respectively. The expanded sensing wavelength range contributes to the application development of future silicon photonics integration platforms.
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Affiliation(s)
- Zih-Chun Su
- Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan;
| | - Ching-Fuh Lin
- Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan;
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan
- Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan
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Narrowband Near-Infrared Perovskite/Organic Photodetector: TCAD Numerical Simulation. CRYSTALS 2022. [DOI: 10.3390/cryst12081033] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
Narrowband photodetectors (PD) established in the near-infrared (NIR) wavelength range are highly required in a variety of applications including high-quality bioimaging. In this simulation study, we propose a filter-less narrowband PD based on the architecture of perovskite/organic heterojunction. The most decisive part of the photodetector is the hierarchical configuration of a larger bandgap perovskite material with a thicker film followed by a lower bandgap organic material with a narrower layer. The design of the structure is carried out by TCAD numerical simulations. Our structure is based on an experimentally validated wideband organic PD, which is modified by invoking an additional perovskite layer having a tunable bandgap. The main detector device comprises of ITO/perovskite (CsyFA1−yPb(IxBr1−x)3)/organic blend (PBDTTT-c:C60-PCBM)/PEDOT:PSS/Al. The simulation results show that the proposed heterojunction PD achieves satisfactory performance when the thickness of perovskite and organic layers are 2.5 µm and 500 nm, respectively. The designed photodetector achieves a narrow spectral response at 730 nm with a full width at half-maximum (FWHM) of 33 nm in the detector, while having a responsivity of about 0.12 A/W at zero bias. The presented heterojunction perovskite/organic PD can efficiently detect light in the wavelength range of 700 to 900 nm. These simulation results can be employed to drive the development of filter-less narrowband NIR heterojunction PD.
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