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Morales C, Tschammer R, Pożarowska E, Kosto J, Villar-Garcia IJ, Pérez-Dieste V, Favaro M, Starr DE, Kapuścik P, Mazur M, Wojcieszak D, Domaradzki J, Alvarado C, Wenger C, Henkel K, Flege JI. Hydrogen Sensing via Heterolytic H 2 Activation at Room Temperature by Atomic Layer Deposited Ceria. CHEMSUSCHEM 2025:e202402342. [PMID: 39821714 DOI: 10.1002/cssc.202402342] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2024] [Revised: 01/14/2025] [Accepted: 01/15/2025] [Indexed: 01/19/2025]
Abstract
Ultrathin atomic layer deposited ceria films (<20 nm) are capable of H2 heterolytic activation at room temperature, undergoing a significant reduction regardless of the absolute pressure, as measured under in-situ conditions by near ambient pressure X-ray photoelectron spectroscopy. ALD-ceria can gradually reduce as a function of H2 concentration under H2/O2 environments, especially for diluted mixtures below 10 %. At room temperature, this reduction is limited to the surface region, where the hydroxylation of the ceria surface induces a charge transfer towards the ceria matrix, reducing Ce4+ cations to Ce3+. Thus, ALD-ceria replicates the expected sensing mechanism of metal oxides at low temperatures without using any noble metal decorating the oxide surface to enhance H2 dissociation. The intrinsic defects of the ALD deposit seem to play a crucial role since the post-annealing process capable of healing these defects leads to decreased film reactivity. The sensing behavior was successfully demonstrated in sensor test structures by resistance changes towards low concentrations of H2 at low operating temperatures without using noble metals. These promising results call for combining ALD-ceria with more conductive metal oxides, taking advantage of the charge transfer at the interface and thus modifying the depletion layer formed at the heterojunction.
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Affiliation(s)
- Carlos Morales
- Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Zuse-Straße 1, 03046, Cottbus, Germany
| | - Rudi Tschammer
- Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Zuse-Straße 1, 03046, Cottbus, Germany
| | - Emilia Pożarowska
- Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Zuse-Straße 1, 03046, Cottbus, Germany
| | - Julia Kosto
- Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Zuse-Straße 1, 03046, Cottbus, Germany
- Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, Present address: Charles University, Prague, 18000, Czech Republic
| | - Ignacio J Villar-Garcia
- ALBA Synchrotron Light Source, Carrer de la Llum 2-26, 08290, Barcelona, Cerdanyola del Vallès, Spain
- Departamento de Química, Facultad de Farmacia, Universidad San Pablo CEU, Pl. Montepríncipe s/n, 28668, Alcorcón, Madrid
| | - Virginia Pérez-Dieste
- ALBA Synchrotron Light Source, Carrer de la Llum 2-26, 08290, Barcelona, Cerdanyola del Vallès, Spain
| | - Marco Favaro
- Institute for Solar Fuels, Helmholtz Zentrum Berlin für Materialien und Energie GmbH, 14109, Berlin, Germany
| | - David E Starr
- Institute for Solar Fuels, Helmholtz Zentrum Berlin für Materialien und Energie GmbH, 14109, Berlin, Germany
| | - Paulina Kapuścik
- Faculty of Electronics, Photonics and Microsystems, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372, Wroclaw, Poland
| | - Michał Mazur
- Faculty of Electronics, Photonics and Microsystems, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372, Wroclaw, Poland
| | - Damian Wojcieszak
- Faculty of Electronics, Photonics and Microsystems, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372, Wroclaw, Poland
| | - Jarosław Domaradzki
- Faculty of Electronics, Photonics and Microsystems, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372, Wroclaw, Poland
| | - Carlos Alvarado
- IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236, Frankfurt (Oder), Germany
| | - Christian Wenger
- IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236, Frankfurt (Oder), Germany
| | - Karsten Henkel
- Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Zuse-Straße 1, 03046, Cottbus, Germany
| | - Jan Ingo Flege
- Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Zuse-Straße 1, 03046, Cottbus, Germany
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Singh J, Muller A. High-Precision Trace Hydrogen Sensing by Multipass Raman Scattering. SENSORS (BASEL, SWITZERLAND) 2023; 23:s23115171. [PMID: 37299898 DOI: 10.3390/s23115171] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2023] [Revised: 05/18/2023] [Accepted: 05/26/2023] [Indexed: 06/12/2023]
Abstract
Despite its growing importance in the energy generation and storage industry, the detection of hydrogen in trace concentrations remains challenging, as established optical absorption methods are ineffective in probing homonuclear diatomics. Besides indirect detection approaches using, e.g., chemically sensitized microdevices, Raman scattering has shown promise as an alternative direct method of unambiguous hydrogen chemical fingerprinting. We investigated the suitability of feedback-assisted multipass spontaneous Raman scattering for this task and examined the precision with which hydrogen can be sensed at concentrations below 2 parts per million. A limit of detection of 60, 30, and 20 parts per billion was obtained at a pressure of 0.2 MPa in a 10-min-long, 120-min-long, and 720-min-long measurement, respectively, with the lowest concentration probed being 75 parts per billion. Various methods of signal extraction were compared, including asymmetric multi-peak fitting, which allowed the resolution of concentration steps of 50 parts per billion, determining the ambient air hydrogen concentration with an uncertainty level of 20 parts per billion.
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Affiliation(s)
- Jaspreet Singh
- Physics Department, University of South Florida, Tampa, FL 33620, USA
| | - Andreas Muller
- Physics Department, University of South Florida, Tampa, FL 33620, USA
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Alamri M, Liu B, Berrie CL, Walsh M, Wu JZ. Probing the role of CNTs in Pt nanoparticle/CNT/graphene nanohybrids H 2 sensors. NANO EXPRESS 2022. [DOI: 10.1088/2632-959x/ac843d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Abstract
Abstract
In the carbon nanotubes film/graphene heterostructure decorated with catalytic Pt nanoparticles using atomic layer deposition (Pt-NPs/CNTs/Gr) H2 sensors, the CNT film determines the effective sensing area and the signal transport to Gr channel. The former requires a large CNT aspect ratio for a higher sensing area while the latter demands high electric conductivity for efficient charge transport. Considering the CNT’s aspect ratio decreases, while its conductivity increases (i.e., bandgap decreases), with the CNT diameter, it is important to understand how quantitatively these effects impact the performance of the Pt-NPs/CNTs/Gr nanohybrids sensors. Motivated by this, this work presents a systematic study of the Pt-NPs/CNTs/Gr H2 sensor performance with the CNT films made from different constituent CNTs of diameters ranging from 1 nm for single-wall CNTs, to 2 nm for double-wall CNTs, and to 10–30 nm for multi-wall CNTs (MWCNTs). By measuring the morphology and electric conductivity of SWCNT, DWCNT and MWCNT films, this work aims to reveal the quantitative correlation between the sensor performance and relevant CNT properties. Interestingly, the best performance is obtained on Pt-NPs/MWCNTs/Gr H2 sensors, which can be attributed to the compromise of the effective sensing area and electric conductivity on MWCNT films and illustrates the importance of optimizing sensor design.
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