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Wu X. Nanostructured Electrodes for High-Performance Supercapacitors and Batteries. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2807. [PMID: 37887957 PMCID: PMC10609575 DOI: 10.3390/nano13202807] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Accepted: 10/13/2023] [Indexed: 10/28/2023]
Abstract
Emerging renewable energy sources have received extensive attention in the past few decades [...].
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Affiliation(s)
- Xiang Wu
- School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870, China
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Liang K, Wang J, Wei X, Zhang Y, Fan J, Ni L, Yang Y, Liu J, Tian Y, Wang X, Yuan C, Duan L. Tunable electronic and optical properties of MoTe 2/InSe heterostructure via external electric field and strain engineering. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35. [PMID: 37158122 DOI: 10.1088/1361-648x/acd09b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2023] [Accepted: 04/26/2023] [Indexed: 05/10/2023]
Abstract
Based on first-principles calculation under density functional theory, the geometry, electronic and optical properties of the MoTe2/InSe heterojunction have been investigated. The results reveal that the MoTe2/InSe heterojunction has a typical type-Ⅱ band alignment and exhibits an indirect bandgap of 0.99 eV. In addition, the Z-scheme electron transport mechanism is capable of efficiently separating photogenerated carriers. The bandgap of the heterostructure changes regularly under applied electric field and exhibits a significant Giant Stark effect. Under an applied electric field of 0.5 V Å-1, the band alignment of the heterojunction shifts from type-Ⅱ to type-I. The application of strain produced comparable changes in the heterojunction. More importantly, the transition from semiconductor to metal is completed in the heterostructure under the applied electric field and strain. Furthermore, the MoTe2/InSe heterojunction retains the optical properties of two monolayers and produces greater light absorption on this basis, especially for UV light. The above results offer a theoretical basis for the application of MoTe2/InSe heterostructure in the next generation of photodetectors.
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Affiliation(s)
- Kanghao Liang
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Jing Wang
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Xing Wei
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Yan Zhang
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Jibin Fan
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Lei Ni
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Yun Yang
- School of Information Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Jian Liu
- School of Physics, Shandong University, Jinan 250100, People's Republic of China
| | - Ye Tian
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Xuqiang Wang
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Chongrong Yuan
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Li Duan
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
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