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Fan B, Tang H, Wu P, Qiu Y, Jiang L, Lin L, Su J, Zhou B, Pan M. Actively Tunable "Single Peak/Broadband" Absorbent, Highly Sensitive Terahertz Smart Device Based on VO 2. MICROMACHINES 2024; 15:208. [PMID: 38398936 PMCID: PMC10890599 DOI: 10.3390/mi15020208] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2023] [Revised: 01/26/2024] [Accepted: 01/26/2024] [Indexed: 02/25/2024]
Abstract
In recent years, the development of terahertz (THz) technology has attracted significant attention. Various tunable devices for THz waves (0.1 THz-10 THz) have been proposed, including devices that modulate the amplitude, polarization, phase, and absorption. Traditional metal materials are often faced with the problem of non-adjustment, so the designed terahertz devices play a single role and do not have multiple uses, which greatly limits their development. As an excellent phase change material, VO2's properties can be transformed by external temperature stimulation, which provides new inspiration for the development of terahertz devices. To address these issues, this study innovatively combines metamaterials with phase change materials, leveraging their design flexibility and temperature-induced phase transition characteristics. We have designed a THz intelligent absorber that not only enables flexible switching between multiple functionalities but also achieves precise performance tuning through temperature stimulation. Furthermore, we have taken into consideration factors such as the polarization mode, environmental temperature, structural parameters, and incident angle, ensuring the device's process tolerance and environmental adaptability. Additionally, by exploiting the principle of localized surface plasmon resonance (LSPR) accompanied by local field enhancement, we have monitored and analyzed the resonant process through electric field characterization. In summary, the innovative approach and superior performance of this structure provide broader insights and methods for THz device design, contributing to its theoretical research value. Moreover, the proposed absorber holds potential for practical applications in electromagnetic invisibility, shielding, modulation, and detection scenarios.
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Affiliation(s)
- Baodian Fan
- Key Laboratory of Green Perovskites Application of Fujian Provincial Universities, Fujian Jiangxia University, Fuzhou 350108, China; (B.F.); (Y.Q.); (L.J.); (L.L.)
| | - Hao Tang
- Key Laboratory of Information Functional Material for Fujian Higher Education, College of Physics and Information Engineering, Quanzhou Normal University, Quanzhou 362000, China; (H.T.); (P.W.); (J.S.); (B.Z.)
| | - Pinghui Wu
- Key Laboratory of Information Functional Material for Fujian Higher Education, College of Physics and Information Engineering, Quanzhou Normal University, Quanzhou 362000, China; (H.T.); (P.W.); (J.S.); (B.Z.)
| | - Yu Qiu
- Key Laboratory of Green Perovskites Application of Fujian Provincial Universities, Fujian Jiangxia University, Fuzhou 350108, China; (B.F.); (Y.Q.); (L.J.); (L.L.)
| | - Linqin Jiang
- Key Laboratory of Green Perovskites Application of Fujian Provincial Universities, Fujian Jiangxia University, Fuzhou 350108, China; (B.F.); (Y.Q.); (L.J.); (L.L.)
| | - Lingyan Lin
- Key Laboratory of Green Perovskites Application of Fujian Provincial Universities, Fujian Jiangxia University, Fuzhou 350108, China; (B.F.); (Y.Q.); (L.J.); (L.L.)
| | - Jianzhi Su
- Key Laboratory of Information Functional Material for Fujian Higher Education, College of Physics and Information Engineering, Quanzhou Normal University, Quanzhou 362000, China; (H.T.); (P.W.); (J.S.); (B.Z.)
| | - Bomeng Zhou
- Key Laboratory of Information Functional Material for Fujian Higher Education, College of Physics and Information Engineering, Quanzhou Normal University, Quanzhou 362000, China; (H.T.); (P.W.); (J.S.); (B.Z.)
| | - Miao Pan
- Key Laboratory of Information Functional Material for Fujian Higher Education, College of Physics and Information Engineering, Quanzhou Normal University, Quanzhou 362000, China; (H.T.); (P.W.); (J.S.); (B.Z.)
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Zhang X, Wang G, Liu J, Zuo S, Li M, Yang S, Jia Y, Gao Y. Switchable and Tunable Terahertz Metamaterial Based on Vanadium Dioxide and Photosensitive Silicon. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2144. [PMID: 37513155 PMCID: PMC10385666 DOI: 10.3390/nano13142144] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Revised: 07/19/2023] [Accepted: 07/20/2023] [Indexed: 07/30/2023]
Abstract
A switchable and tunable terahertz (THz) metamaterial based on photosensitive silicon and Vanadium dioxide (VO2) was proposed. By using a finite-difference time-domain (FDTD) method, the transmission and reflective properties of the metamaterial were investigated theoretically. The results imply that the metamaterial can realize a dual electromagnetically induced transparency (EIT) or two narrow-band absorptions depending on the temperature of the VO2. Additionally, the magnitude of the EIT and two narrow-band absorptions can be tuned by varying the conductivity of photosensitive silicon (PSi) via pumping light. Correspondingly, the slow-light effect accompanying the EIT can also be adjusted.
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Affiliation(s)
- Xin Zhang
- Electronic Engineering College, Heilongjiang University, Harbin 150080, China
| | - Guan Wang
- Electronic Engineering College, Heilongjiang University, Harbin 150080, China
| | - Jia Liu
- Electronic Engineering College, Heilongjiang University, Harbin 150080, China
| | - Shiyi Zuo
- Electronic Engineering College, Heilongjiang University, Harbin 150080, China
| | - Meichen Li
- Electronic Engineering College, Heilongjiang University, Harbin 150080, China
| | - Shuang Yang
- Electronic Engineering College, Heilongjiang University, Harbin 150080, China
| | - Yang Jia
- Electronic Engineering College, Heilongjiang University, Harbin 150080, China
- College of Communication and Electronic Engineering, Qiqihar University, Qiqihar 161000, China
| | - Yachen Gao
- Electronic Engineering College, Heilongjiang University, Harbin 150080, China
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