All-Printed Flexible Memristor with Metal–Non-Metal-Doped TiO2 Nanoparticle Thin Films

Fully printed memristors made with MoS2 and graphene water-based inks

2-Dimensional materials (2DMs) offer an attractive solution for the realization of high density and reliable memristors, compatible with printed and flexible electronics. In this work we fabricate a fully inkjet printed MoS2-based resistive switching memory, where graphene is used as top electrode and silver is used as bottom electrode. Memristic effects are observed only after annealing of each printed component. The printed memory on silicon shows low SET/RESET voltage, short switching times (less than 0.1 s) and resistance switching ratios of 103-105, comparable or superior to the performance obtained in devices with both printed silver electrodes on rigid substrates. The same device on Kapton shows resistance switching ratios of 102-103 and remains stable at least up to 2% of strain. The memristor resistance switching is attributed to the formation of Ag conductive filaments, which can be suppressed by integrating graphene grown by chemical vapour deposition (CVD) onto the silver electrode. Temperature-dependent electrical measurements starting from 200 K show that memristic behavior appears at a temperature of ∼300 K, confirming that an energy threshold is needed to form the conductive filament. This work shows that inkjet printing is a very powerful technique for the fabrication of 2DMs-based resistive switches onto rigid and flexible substrates.

Immobilization of Multivalent Titanium Cations on Magnetic Composite Microspheres for Highly Efficient DNA Extraction and Amplification

Magnetic-assisted DNA testing technology has attracted much attention in genetics, clinical diagnostics, environmental microbiology, and molecular biology. However, achieving satisfying DNA adsorption and desorption efficiency in real samples is still a big challenge. In this paper, a new kind of high-quality magnetic composite microsphere of MM@PGMA-PA-Ti4+ was designed and prepared for DNA extraction and detection based on the strong interaction of Ti4+ and phosphate groups. By taking the advantages of high magnetic susceptibility and high Ti4+ content, the MM@PGMA-PA-Ti4+ microspheres possessed remarkable extraction capacity for mimic biological samples (salmon sperm specimens) with saturated loadings up to 533.0 mg/g. When the DNA feeding amount was 100 μg and the MM@PGMA-PA-Ti4+ dosage was 1 mg, the adsorption and desorption efficiencies were 80 and 90%, respectively. The kinetic and equilibrium extraction data were found to fit well with the pseudo-second-order model and Freundlich isotherm model. Furthermore, the MM@PGMA-PA-Ti4+ microspheres were successfully employed for DNA extraction from mouse epithelial-like fibroblasts. The extraction ability (84 ± 4 μg/mg) and DNA purity were superior to the comparative commercial spin kits, as evaluated by electrophoresis assays and qPCR analysis. The experimental results suggest that the MM@PGMA-PA-Ti4+ microspheres possess great potential as an adsorbent for DNA purification from complex biological samples.

Triphenylamine-Based Helical Polymer for Flexible Memristors

Flexible nonvolatile memristors have potential applications in wearable devices. In this work, a helical polymer, poly (N, N-diphenylanline isocyanide) (PPIC), was synthesized as the active layer, and flexible electronic devices with an Al/PPIC/ITO architecture were prepared on a polyethylene terephthalate (PET) substrate. The device showed typical nonvolatile rewritable memristor characteristics. The high-molecular-weight helical structure stabilized the active layer under different bending degrees, bending times, and number of bending cycles. The memristor was further employed to simulate the information transmission capability of neural fibers, providing new perspectives for the development of flexible wearable memristors and biomimetic neural synapses. This demonstration highlights the promising possibilities for the advancement of artificial intelligence skin and intelligent flexible robots in the future.

Preparation of multilayer strontium-doped TiO2/CDs with enhanced photocatalytic efficiency for enrofloxacin removal

Multilayer strontium-doped TiO₂/carbon dots (CDs) materials (TC) were produced via sol-gel-layered carbonization method. A thorough analysis of the fabricated composites via XRD, SEM, and XPS revealed that strontium ions, TiO₂ and CDs, were combined with each other to form layered structures. According to the UV-Vis diffuse reflectance spectrograms and (αhv)^1/2 vs. hv plots, the electron-donor property of strontium ions caused a more positive TC conduction band position than that in the pure TiO₂, thereby increasing the visible-light absorption range of TC. Based on the photocatalytic degradation data, the degradation rate of enrofloxacin was 84.7% at the dosage of 0.05 g·L^-1 and the concentration of 10 mg·L^-1. The capture experiments and ESR results showed that ·O₂^- and e^- played a major role in the degradation process of TC. The possible degradation mechanism of enrofloxacin was explained in terms of decarboxylation and defluorination, as was detected via ultra-performance liquid chromatography-mass spectrometry (UPLC-MS) analysis.

Artificial HfO2/TiOx Synapses with Controllable Memory Window and High Uniformity for Brain-Inspired Computing

Artificial neural networks, as a game-changer to break up the bottleneck of classical von Neumann architectures, have attracted great interest recently. As a unit of artificial neural networks, memristive devices play a key role due to their similarity to biological synapses in structure, dynamics, and electrical behaviors. To achieve highly accurate neuromorphic computing, memristive devices with a controllable memory window and high uniformity are vitally important. Here, we first report that the controllable memory window of an HfO₂/TiO_x memristive device can be obtained by tuning the thickness ratio of the sublayer. It was found the memory window increased with decreases in the thickness ratio of HfO₂ and TiO_x. Notably, the coefficients of variation of the high-resistance state and the low-resistance state of the nanocrystalline HfO₂/TiO_x memristor were reduced by 74% and 86% compared with the as-deposited HfO₂/TiO_x memristor. The position of the conductive pathway could be localized by the nanocrystalline HfO₂ and TiO₂ dot, leading to a substantial improvement in the switching uniformity. The nanocrystalline HfO₂/TiO_x memristive device showed stable, controllable biological functions, including long-term potentiation, long-term depression, and spike-time-dependent plasticity, as well as the visual learning capability, displaying the great potential application for neuromorphic computing in brain-inspired intelligent systems.

Low-Dimensional-Materials-Based Flexible Artificial Synapse: Materials, Devices, and Systems

With the rapid development of artificial intelligence and the Internet of Things, there is an explosion of available data for processing and analysis in any domain. However, signal processing efficiency is limited by the Von Neumann structure for the conventional computing system. Therefore, the design and construction of artificial synapse, which is the basic unit for the hardware-based neural network, by mimicking the structure and working mechanisms of biological synapses, have attracted a great amount of attention to overcome this limitation. In addition, a revolution in healthcare monitoring, neuro-prosthetics, and human-machine interfaces can be further realized with a flexible device integrating sensing, memory, and processing functions by emulating the bionic sensory and perceptual functions of neural systems. Until now, flexible artificial synapses and related neuromorphic systems, which are capable of responding to external environmental stimuli and processing signals efficiently, have been extensively studied from material-selection, structure-design, and system-integration perspectives. Moreover, low-dimensional materials, which show distinct electrical properties and excellent mechanical properties, have been extensively employed in the fabrication of flexible electronics. In this review, recent progress in flexible artificial synapses and neuromorphic systems based on low-dimensional materials is discussed. The potential and the challenges of the devices and systems in the application of neuromorphic computing and sensory systems are also explored.

Charge Transport inside TiO2 Memristors Prepared via FEBID

We fabricated memristive devices using focused electron beam-induced deposition (FEBID) as a direct-writing technique employing a Pt/TiO₂/Pt sandwich layer device configuration. Pinching in the measured current-voltage characteristics (i-v), the characteristic fingerprint of memristive behavior was clearly observed. The temperature dependence was measured for both high and low resistive states in the range from 290 K down to about 2 K, showing a stretched exponential behavior characteristic of Mott-type variable-range hopping. From this observation, a valence change mechanism of the charge transport inside the TiO₂ layer can be deduced.