The Interrelation of Synthesis Conditions and Wettability Properties of the Porous Anodic Alumina Membranes

First principles calculation to investigate the effect of Mn substitution on Cu site in CeCu3-x Mn x V4O12 (x = 0, 1, 2 and 3) system

Structural, electronic, elastic and magnetic properties of CeCu3-x Mn x V4O12 (x = 0, 1, 2 and 3) system have been carried out through DFT using GGA, GGA+U and HF potential. The investigation of structural optimization reveals that lattice parameters of the understudy system is reliable with the reported results and are increasing with the Mn substitution due to their greater atomic radii as compare to Cu atom. Both the cohesive energy and the enthalpy show that CeCu3V4O12 is the most thermodynamically stable among these compounds. When Mn is replaced by Cu in these compounds, not only it become semi-metals, but the host compound also changes from non-magnetic to anti-ferromagnetic and their electrical resistance provides further credence to their electronic behavior. Mechanical stability, anisotropy, and ductility are all demonstrated through the elastic characteristics of these compounds. Due to anti-ferromagnetic ductile nature of the Mn base compounds, it is expected that the compounds in the system may use for spintronic application and in magnetic cloaking devices.

High-Resolution Scanning Electron Microscopy Imaging to Understand the Growth Kinetics of Nickel Nanorods

In the present work, the growth kinetics of nickel nanorods inside commercially available Whatman nanoporous membrane is explored to achieve uniform deposition over a large area of the membrane. Uniform electrodeposition inside nanopores requires continuous presence of solute ions near the deposition site and reduction of ions. To control ion diffusion and reduction near the deposition site, the effect of DC potential and pulsed potential with various duty cycles and solution temperatures is analyzed. Time-dependent variation in deposition current is recorded for all experiments. For different experimental conditions, high-resolution scanning electron microscopy (SEM) image is acquired. SEM along with the current density profile helped to understand the deposition mechanism for various growth conditions. Experiments confirmed that pulse deposition with a small duty cycle is promising to achieve uniform deposition. Also, by changing the pulse duty cycle, a sectioned nanostructure can be obtained. Based on the electron microscopic observation for various deposition conditions used in this work, it is concluded that initially nickel ions adhere to the pore surfaces due to high surface energy. When a potential is applied, ions reduce and a hollow nanotube structure forms. With time, concentric growth continues by forming a solid nanorod structure.

High Crystallinity Vertical Few-Layer Graphene Grown Using Template Method Assisted ICPCVD Approach

Controllable synthesis of high crystallinity, low defects vertical few-layer graphene (VFLG) is significant for its application in electron emission, sensor or energy storage, etc. In this paper, a template method was introduced to grow high crystallinity VFLG (HCVFLG). A copper mask acted as a template which has two effects in the high-density plasma enhanced deposition which are protecting VFLG from ion etching and creating a molecular gas flow to assist efficient growth. Raman and TEM results confirmed the improved crystallinity of VFLG with the assistance of a copper mask. As a field emitter, the HCVFLG has a large field emission current and a low turn-on field. The maximum field emission current of a single HCVFLG sheet reaches 93 μA which is two orders of magnitude higher than VFLG grown without a mask. The maximum current density of HCVFLG film reached 67.15 mA/cm² and is 2.6 times of VFLG grown without a mask. The vacuum breakdown mechanism of HCVFLG was contacted interface damage resulting in VFLG detaching from the substrate. This work provides a practical strategy for high-quality VFLG controllable synthesis and provides a simple method to realize the pattern growth of VFLG.