Polarization Control in Integrated Silicon Waveguides Using Semiconductor Nanowires

Low Loss Vertical TiO2/Polymer Hybrid Nano-Waveguides

This article proposes a novel demonstration of a low-loss polymer channel hybridized with a titania core leading to a nano-waveguide elongated in the normal direction to the substrate. It is aimed at using the quasi-transverse magnetic (TM) mode as the predominant mode in compact photonic circuitry. A detailed design analysis shows how a thin layer of a higher-refractive index material in a trench within the core of the waveguide can increase the confinement and reduce the propagation losses. This thin layer, produced by atomic layer deposition, covers the entire polymer structure in a conformal manner, ensuring both a reduction of the surface roughness and a stronger field confinement. The trench can be made at any place within the polymer channel and therefore its position can be tuned to obtain asymmetric modal distribution. The waveguide is demonstrated at telecom wavelengths, although the material's properties enable operation over a large part of the electromagnetic spectrum. We measured propagation losses as low as 1.75 ± 0.32 dB/cm in a 200 nm × 900 nm section of the waveguide core. All processes being mass-production compatible, this study opens a path towards easier integrated-component manufacture.

Polarization Control in Integrated Graphene-Silicon Quantum Photonics Waveguides

We numerically investigated the use of graphene nanoribbons placed on top of silicon-on-insulator (SOI) strip waveguides for light polarization control in silicon photonic-integrated waveguides. We found that two factors mainly affected the polarization control: the graphene chemical potential and the geometrical parameters of the waveguide, such as the waveguide and nanoribbon widths and distance. We show that the graphene chemical potential influences both TE and TM polarizations almost in the same way, while the waveguide width tapering enables both TE-pass and TM-pass polarizing functionalities. Overall, by increasing the oxide spacer thickness between the silicon waveguide and the top graphene layer, the device insertion losses can be reduced, while preserving a high polarization extinction ratio.