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Wang X, Tong L, Fan W, Yan W, Su C, Wang D, Wang Q, Yan H, Yin S. Air-stable self-powered photodetector based on TaSe 2/WS 2/TaSe 2 asymmetric heterojunction with surface self-passivation. J Colloid Interface Sci 2024; 657:529-537. [PMID: 38070338 DOI: 10.1016/j.jcis.2023.11.172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Revised: 11/09/2023] [Accepted: 11/27/2023] [Indexed: 01/02/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides are highly suitable for constructing junction photodetectors because of their suspended bond-free surface and adjustable bandgap. Additional stable layers are often used to ensure the stability of photodetectors. Unfortunately, they often increase the complexity of preparation and cause performance degradation of devices. Considering the self-passivation behavior of TaSe2, we designed and fabricated a novel self-powered TaSe2/WS2/TaSe2 asymmetric heterojunction photodetector. The heterojunction photodetector shows excellent photoelectric performance and photovoltaic characteristics, achieving a high responsivity of 292 mA/W, an excellent specific detectivity of 2.43 × 1011 Jones, a considerable external quantum efficiency of 57 %, a large optical switching ratio of 2.6 × 105, a fast rise/decay time of 43/54 μs, a high open-circuit voltage of 0.23 V, and a short-circuit current of 2.28 nA under 633 nm laser irradiation at zero bias. Moreover, the device also shows a favorable optical response to 488 and 532 nm lasers. Notably, it exhibits excellent environmental long-term stability with the performance only decreasing ∼ 5.6 % after exposed to air for 3 months. This study provides a strategy for the development of air-stable self-powered photodetectors based on 2D materials.
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Affiliation(s)
- Xinyu Wang
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Lei Tong
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Wenhao Fan
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Wei Yan
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Can Su
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Deji Wang
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Qingguo Wang
- GuoAng Zhuotai (Tianjin) Smart IOT Technology Co., Ltd, Tianjin 301700, China
| | - Hui Yan
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Shougen Yin
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
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Li X, Xu Q, Zhang Z. Molecular Beam Epitaxy Growth of Quantum Wires and Quantum Dots. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:960. [PMID: 36985853 PMCID: PMC10056528 DOI: 10.3390/nano13060960] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2023] [Accepted: 03/02/2023] [Indexed: 06/18/2023]
Abstract
Molecular beam epitaxy technology has a significant advantage in semiconductor technology due to its strong controllability, especially for the preparation of materials such as quantum wires and quantum dots [...].
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Affiliation(s)
- Xiaohui Li
- School of Physics and Information Technology, Shaanxi Normal University, Xi’an 710119, China
| | - Qian Xu
- School of Physics and Information Technology, Shaanxi Normal University, Xi’an 710119, China
| | - Ziyang Zhang
- School of Electronic and Information Engineering, Qingdao University, Qingdao 266071, China
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