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Ge C, Liu Z, Zhu Y, Zhou Y, Jiang B, Zhu J, Yang X, Zhu Y, Yan S, Hu H, Song H, Li L, Chen C, Tang J. Insight into the High Mobility and Stability of In 2 O 3 :H Film. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304721. [PMID: 37670209 DOI: 10.1002/smll.202304721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 08/26/2023] [Indexed: 09/07/2023]
Abstract
Wide bandgap semiconductors, particularly In2 O3 :Sn (ITO), are widely used as transparent conductive electrodes in optoelectronic devices. Nevertheless, due to the strohave beenng scattering probability of high-concentration oxygen vacancy (VO ) defects, the mobility of ITO is always lower than 40 cm2 V-1 s-1 . Recently, hydrogen-doped In2 O3 (In2 O3 :H) films have been proven to have high mobility (>100 cm2 V-1 s-1 ), but the origin of this high mobility is still unclear. Herein, a high-resolution electron microscope and theoretical calculations are employed to investigate the atomic-scale mechanisms behind the high carrier mobility in In2 O3 :H films. It is found that VO can cause strong lattice distortion and large carrier scattering probability, resulting in low carrier mobility. Furthermore, hydrogen doping can simultaneously reduce the concentration of VO , which accounts for high carrier mobility. The thermal stability and acid-base corrosion mechanism of the In2 O3 :H film are investigated and found that hydrogen overflows from the film at high temperatures (>250 °C), while acidic or alkaline environments can cause damage to the In2 O3 grains themselves. Overall, this work provides insights into the essential reasons for high carrier mobility in In2 O3 :H and presents a new research approach to the doping and stability mechanisms of transparent conductive oxides.
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Affiliation(s)
- Ciyu Ge
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Zunyu Liu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Yongchen Zhu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Yilong Zhou
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Borui Jiang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jiaxing Zhu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Xuke Yang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Yongxin Zhu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Shuyu Yan
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Haojun Hu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Haisheng Song
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Luying Li
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Chao Chen
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- Optics Valley Laboratory, Hubei, 430074, P. R. China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- Optics Valley Laboratory, Hubei, 430074, P. R. China
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Tran T, Shrestha M, Baule N, Wang K, Fan QH. Stable Ultra-thin Silver Films Grown by Soft Ion Beam-Enhanced Sputtering with an Aluminum Cap Layer. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37294824 DOI: 10.1021/acsami.3c03118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Ultra-thin silver films are susceptible to ambient environments and form grayish layers in the silver mirroring process. The poor wettability together with the high diffusivity of surface atoms in the presence of oxygen accounts for the thermal instability of ultra-thin silver films in the air and at elevated temperatures. This work demonstrates an atomic-scale aluminum cap layer on the silver to enhance the thermal and environmental stabilities of ultra-thin silver films deposited by sputtering with the assistance of a soft ion beam reported in our previous work. The resulted film consists of an ion-beam-treated seed silver layer of ∼1 nm nominal thickness, a subsequent silver layer of ∼6 nm thickness produced by sputtering alone, and an aluminum cap layer of ∼0.2 nm nominal thickness. Although the aluminum cap is only one to two atomic layers and likely non-continuous, it significantly improved the thermal and ambient environmental stability of the ultra-thin silver films (∼7 nm thick) without affecting the film's optical and electrical properties. The improved environmental stability is attributed to the cathodic protection mechanism and reduced diffusivity of surface atoms. The improved thermal stability is attributed to the reduced mobility of surface atoms in the presence of aluminum atoms. Thermal treatment of the duplex film also improves the film's electrical conductivity and optical transmittance by enhancing its crystallinity. The annealed aluminum/silver duplex structure has exhibited the lowest electric resistivity among the reported ultra-thin silver films and high optical transmittance similar to the simulated theoretical results.
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Affiliation(s)
- Thanh Tran
- Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, Michigan 48824, United States
| | - Maheshwar Shrestha
- Fraunhofer USA Center Midwest, East Lansing, Michigan 48824, United States
| | - Nina Baule
- Fraunhofer USA Center Midwest, East Lansing, Michigan 48824, United States
| | - Keliang Wang
- Fraunhofer USA Center Midwest, East Lansing, Michigan 48824, United States
| | - Qi Hua Fan
- Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, Michigan 48824, United States
- Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824, United States
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Mohan B, Kumar S, Chen Q. Obtaining Water from Air Using Porous Metal-Organic Frameworks (MOFs). Top Curr Chem (Cham) 2022; 380:54. [PMID: 36269450 DOI: 10.1007/s41061-022-00410-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/06/2022] [Accepted: 10/05/2022] [Indexed: 01/01/2023]
Abstract
Water collection from moisture in air, i.e., atmospheric water harvesting, is an urgent future need for society. It can be used for water production everywhere and anytime as an alternative water source in remote areas. However, water harvesting and collection usually relies on desalination, fog, and dewing harvesting, which are energy intensive. In this respect, metal-organic frameworks (MOFs) have broad applicability for water harvesting in water-scarce areas; therefore, the current discussion focuses on this approach. Furthermore, recent progress on MOFs for moisture harvesters is critically discussed. In addition, the design, operation, and water harvesting mechanisms of MOFs are studied. Finally, we discuss critical points for future research for the design of new MOFs as moisture harvesters for use in practical applications. MOF adsorbents offer excellent operating capacity in various temperature and pressure ranges. Rational water harvesters can thus be developed by adjusting structural properties such as the porosity, functionalities, and metal centers, thereby enabling new devices to produce water even in remote areas.
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Affiliation(s)
- Brij Mohan
- College of Ocean Food and Biological Engineering, Jimei University, 185 Yinjiang Road, Jimei District, Xiamen, 361021, China.
| | - Suresh Kumar
- Department of Chemistry, Kurukshetra University, Kurukshetra, Haryana, 136119, India
| | - Quansheng Chen
- College of Ocean Food and Biological Engineering, Jimei University, 185 Yinjiang Road, Jimei District, Xiamen, 361021, China.
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