Formation of Diamane Nanostructures in Bilayer Graphene on Langasite under Irradiation with a Focused Electron Beam

Current Advances in Nanoelectronics, Nanosensors, and Devices

This Special Issue on "Current Advances in Nanoelectronics, Nanosensors, and Devices" collects cutting-edge research and comprehensive reviews in the rapidly evolving field of nanotechnology. This collection aims to highlight key breakthroughs in nanostructures, 2D materials, and their applications in nanoelectronics, nanosensors, and emerging device technologies.

Resistive Switching in Bigraphene/Diamane Nanostructures Formed on a La3Ga5SiO14 Substrate Using Electron Beam Irradiation

Memristors, resistive switching memory devices, play a crucial role in the energy-efficient implementation of artificial intelligence. This study investigates resistive switching behavior in a lateral 2D composite structure composed of bilayer graphene and 2D diamond (diamane) nanostructures formed using electron beam irradiation. The resulting bigraphene/diamane structure exhibits nonlinear charge carrier transport behavior and a significant increase in resistance. It is shown that the resistive switching of the nanostructure is well controlled using bias voltage. The impact of an electrical field on the bonding of diamane-stabilizing functional groups is investigated. By subjecting the lateral bigraphene/diamane/bigraphene nanostructure to a sufficiently strong electric field, the migration of hydrogen ions and/or oxygen-related groups located on one or both sides of the nanostructure can occur. This process leads to the disruption of sp3 carbon bonds, restoring the high conductivity of bigraphene.

Formation of carbon propeller-like molecules from starphenes under electron irradiation

Formation of carbon propeller-like molecules (CPLMs) from starphenes on a graphene substrate under electron irradiation with about 100% yield is observed in molecular dynamics simulations using the REBO-1990EVC_CH potential and CompuTEM algorithm. A CPLM consists of three carbon atomic chains connected to the central hexagon and is formed as a result of the spontaneous breaking of bonds between zigzag atomic rows in starphene arms after hydrogen removal by electron impacts. In the absence of the substrate, the CPLM yield is slightly decreased due to sticking between forming chains, while the formation time is increased threefold. The increase of the kinetic electron energy from 45 to 80 keV has no effect on the CPLM formation. Density functional theory (DFT) calculations performed show the stability of CPLMs with respect to the formation of new bonds between carbon atoms in the chains. DFT calculations using the accurate hybrid B3LYP functional provide an insight into the electronic structure of these new molecules.

Diamane-like Films Based on Twisted G/BN Bilayers: DFT Modelling of Atomic Structures and Electronic Properties

Diamanes are unique 2D carbon materials that can be obtained by the adsorption of light atoms or molecular groups onto the surfaces of bilayer graphene. Modification of the parent bilayers, such as through twisting of the layers and the substitution of one of the layers with BN, leads to drastic changes in the structure and properties of diamane-like materials. Here, we present the results of the DFT modelling of new stable diamane-like films based on twisted Moiré G/BN bilayers. The set of angles at which this structure becomes commensurate was found. We used two commensurate structures with twisted angles of θ = 10.9° and θ = 25.3° with the smallest period as the base for the formation of the diamane-like material. Previous theoretical investigations did not take into account the incommensurability of graphene and boron nitride monolayers when considering diamane-like films. The double-sided hydrogenation or fluorination of Moiré G/BN bilayers and the following interlayer covalent bonding led to the opening of a gap up to 3.1 eV, which was lower than the corresponding values of h-BN and c-BN. The considered G/BN diamane-like films offer great potential in the future for a variety of engineering applications.

Visualization of Swift Ion Tracks in Suspended Local Diamondized Few-Layer Graphene

In the present study we investigated the nanostructuring processes in locally suspended few-layer graphene (FLG) films by irradiation with high energy ions (Xe, 26-167 MeV). For such an energy range, the main channel of energy transfer to FLG is local, short-term excitation of the electronic subsystem. The irradiation doses used in this study are 1 × 10¹¹-5 × 10¹² ion/cm². The structural transformations in the films were identified by Raman spectroscopy and transmission electron microscopy. Two types of nanostructures formed in the FLG films as a result of irradiation were revealed. At low irradiation doses the nanostructures were formed preferably at a certain distance from the ion track and had the form of 15-35 nm "bunches". We assumed that the internal mechanical stress that arises due to the excited atoms ejection from the central track part creates conditions for the nanodiamond formation near the track periphery. Depending on the energy of the irradiating ions, the local restructuring of films at the periphery of the ion tracks can lead either to the formation of nanodiamonds (ND) or to the formation of AA' (or ABC) stacking. The compressive strain value and pressure at the periphery of the ion track were estimated as ~0.15-0.22% and ~0.8-1.2 GPa, respectively. The main novel results are the first visualization of ion tracks in graphene in the form of diamond or diamond-like rings, the determination of the main condition for the diamond formation (the absence of a substrate in combination with high ion energy), and estimates of the local strain at the track periphery. Generally, we have developed a novel material and have found how to control the film properties by introducing regions similar to quantum dots with the diamond interface in FLG films.