Silicon Carbide Nanostructures as Potential Carbide Material for Electrochemical Supercapacitors: A Review

Wide-Bandgap Semiconductors for Radiation Detection: A Review

In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most common 4H-SiC, GaN, and β-Ga2O3 devices used for radiation detection are described. The 4H-SiC and GaN devices have already achieved exceptional results in the detection of alpha particles and neutrons, thermal neutrons in particular. While β-Ga2O3 devices have not yet reached the same level of technological maturity (compared to 4H-SiC and GaN), their current achievements for X-ray detection indicate great potential and promising prospects for future applications.

Advancements in silicon carbide-based supercapacitors: materials, performance, and emerging applications

Silicon carbide (SiC) nanomaterials have emerged as promising candidates for supercapacitor electrodes due to their unique properties, which encompass a broad electrochemical stability range, exceptional mechanical strength, and resistance to extreme conditions. This review offers a comprehensive overview of the latest advancements in SiC nanomaterials for supercapacitors. It encompasses diverse synthesis methods for SiC nanomaterials, including solid-state, gas-phase, and liquid-phase synthesis techniques, while also discussing the advantages and challenges associated with each method. Furthermore, this review places a particular emphasis on the electrochemical performance of SiC-based supercapacitors, highlighting the pivotal role of SiC nanostructures and porous architectures in enhancing specific capacitance and cycling stability. A deep dive into SiC-based composite materials, such as SiC/carbon composites and SiC/metal oxide hybrids, is also included, showcasing their potential to elevate energy density and cycling stability. Finally, the paper outlines prospective research directions aimed at surmounting existing challenges and fully harnessing SiC's potential in the development of next-generation supercapacitors.