A Review on the Progress, Challenges, and Performances of Tin-Based Perovskite Solar Cells

Structural Evolution and Photoluminescence Quenching across the FASnI3-xBrx (x = 0-3) Perovskites

One of the primary methods for band gap tuning in metal halide perovskites has been halide (I/Br) mixing. Despite widespread usage of this type of chemical substitution in perovskite photovoltaics, there is still little understanding of the structural impacts of halide alloying, with the assumption being the formation of ideal solid solutions. The FASnI3-xBrx (x = 0-3) family of compounds provides the first example where the assumption breaks down, as the composition space is broken into two unique regimes (x = 0-2.9; x = 2.9-3) based on their average structure with the former having a 3D and the latter having an extended 3D (pseudo 0D) structure. Pair distribution function (PDF) analyses further suggest a dynamic 5s2 lone pair expression resulting in increasing levels of off-centering of the central Sn as the Br concentration is increased. These antiferroelectric distortions indicate that even the x = 0-2.9 phase space behaves as a nonideal solid-solution on a more local scale. Solid-state NMR confirms the difference in local structure yielding greater insight into the chemical nature and local distributions of the FA+ cation. In contrast to the FAPbI3-xBrx series, a drastic photoluminescence (PL) quenching is observed with x ≥ 1.9 compounds having no observable PL. Our detailed studies attribute this quenching to structural transitions induced by the distortions of the [SnBr6] octahedra in response to stereochemically expressed lone pairs of electrons. This is confirmed through density functional theory, having a direct impact on the electronic structure.

Mixed cations tin-germanium perovskite: A promising approach for enhanced solar cell applications

Significant progress has been made over the years to improve the stability and efficiency of rapidly evolving tin-based perovskite solar cells (PSCs). One powerful approach to enhance the performance of these PSCs is through compositional engineering techniques, specifically by incorporating a mixed cation system at the A-site and B-site structure of the tin perovskite. These approaches will pave the way for unlocking the full potential of tin-based PSCs. Therefore, in this study, a theoretical investigation of mixed A-cations (FA, MA, EA, Cs) with a tin-germanium-based PSC was presented. The crystal structure distortion and optoelectronic properties were estimated. SCAPS 1-D simulations were employed to predict the photovoltaic performance of the optimized tin-germanium material using different electron transport layers (ETLs), hole transport layers (HTLs), active layer thicknesses, and cell temperatures. Our findings reveal that EA0.5Cs0.5Sn0.5Ge0.5I3 has a nearly cubic structure (t = 0.99) and a theoretical bandgap within the maximum Shockley-Queisser limit (1.34 eV). The overall cell performance is also improved by optimizing the perovskite layer thickness to 1200 nm, and it exhibits remarkable stability as the temperature increases. The short-circuit current density (Jsc) remains consistent around 33.7 mA/cm2, and the open-circuit voltage (Voc) is well-maintained above 1 V by utilizing FTO as the conductive layer, ZnO as the ETL, Cu2O as the HTL, and Au as the metal back contact. This configuration also achieves a high fill factor ranging from 87 % to 88 %, with the highest power conversion efficiency (PCE) of 31.49 % at 293 K. This research contributes to the advancement of tin-germanium perovskite materials for a wide range of optoelectronic applications.

Self-Assembled Monolayer-Based Hole-Transporting Materials for Perovskite Solar Cells

Ever since self-assembled monolayers (SAMs) were adopted as hole-transporting layers (HTL) for perovskite solar cells (PSCs), numerous SAMs for HTL have been synthesized and reported. SAMs offer several unique advantages including relatively simple synthesis, straightforward molecular engineering, effective surface modification using small amounts of molecules, and suitability for large-area device fabrication. In this review, we discuss recent developments of SAM-based hole-transporting materials (HTMs) for PSCs. Notably, in this article, SAM-based HTMs have been categorized by similarity of synthesis to provide general information for building a SAM structure. SAMs are composed of head, linker, and anchoring groups, and the selection of anchoring groups is key to design the synthetic procedure of SAM-based HTMs. In addition, the working mechanism of SAM-based HTMs has been visualized and explained to provide inspiration for finding new head and anchoring groups that have not yet been explored. Furthermore, both photovoltaic properties and device stabilities have been discussed and summarized, expanding reader's understanding of the relationship between the structure and performance of SAMs-based PSCs.