Infrared Photodetection from 2D/3D van der Waals Heterostructures

Technology and Integration Roadmap for Optoelectronic Memristor

Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.

Functional Nanomaterials for Sensing and Detection

Functional nanomaterials involve various nanostructured objects, such as zero-dimensional (0D), 1D, and 2D nano-objects (nanoparticles, nanowires, nanotubes, nanosheets, etc [...].

The application of infrared thermography technology in flap: A perspective from bibliometric and visual analysis

The application of infrared thermography technology (IRT) in flap has become a major focus of research, as it provides a non-invasive, real-time, and quantitative approach for monitoring flap perfusion. In this regard, we conducted a comprehensive visualization and scientometric analysis to systematically summarize and discuss the current state of research in this field. We systematically reviewed publications on the application of IRT in flap procedures from 1999 to 2022, using the Web of Science Core Collection (WoSCC). Through scientometric analysis, we examined annual trends, affiliations, countries, journals, authors, and their relationships, providing insights into current hotspots and future developments in this area. We analysed 522 English studies and found a steady increase in annual publications. The United States and Germany had the highest publication rates, with Beth Israel Deaconess Medical Center and Shanghai Jiaotong University being leading institutions. Notably, Lee BT and Alex Keller emerged as influential authors in this field. Compared to existing techniques, infrared-based technology offers significant advantages for non-invasive monitoring of flap perfusion, including simplicity of operation and objective results. Future trends should focus on interdisciplinary collaborations to develop new infrared devices and achieve intelligent image processing, enabling broader application in various clinical scenarios. This bibliometric study summarizes the progress and landscape of research on 'the Application of infrared thermography technology in flap' over the past two decades, providing valuable insights and serving as a reliable reference to drive further advancements and spark researchers' interest in this field.

Polarization-sensitive UV photodetector based on ReSe2/GaN mixed-dimensional heterojunction

Polarization-sensitive photodetectors in the ultraviolet (UV) region have been favored for their great meaning in the field of military and civilian. UV photodetectors based on GaN have aroused much attention due to high photocurrent and high sensitivity. However, the dependence on external power sources and the limited sensitivity to polarized UV light significantly impede the practical application of these photodetectors in UV-polarized photodetection. Herein, a polarization-sensitive UV photodetector based on ReSe2/GaN mixed-dimensional van der Waals (vdWs) heterojunction is proposed. Owing to the high-quality junction and type-II band alignment, the responsivity and specific detectivity reach values of 870 mA/W and 6.8 × 1011 Jones, under 325 nm illumination, respectively. Furthermore, thanks to the strong in-plane anisotropy of ReSe2, the device is highly sensitive to polarized UV light with a photocurrent anisotropic ratio up to 6.67. The findings are expected to bring new opportunities for the development of highly sensitive, high-speed and energy-efficient polarization-sensitive photodetectors.

Graphene nanowalls in photodetectors

Graphene nanowalls (GNWs) have emerged as a promising material in the field of photodetection, thanks to their exceptional optical, electrical, mechanical, and thermodynamic properties. However, the lack of a comprehensive review in this domain hinders the understanding of GNWs' development and potential applications. This review aims to provide a systematic summary and analysis of the current research status and challenges in GNW-based photodetectors. We begin by outlining the growth mechanisms and methods of GNWs, followed by a discussion on their physical properties. Next, we categorize and analyze the latest research progress in GNW photodetectors, focusing on photovoltaic, photoconductive, and photothermal detectors. Lastly, we offer a summary and outlook, identifying potential challenges and outlining industry development directions. This review serves as a valuable reference for researchers and industry professionals in understanding and exploring the opportunities of GNW materials in photodetection.