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Ao Z, Liu C, Ma H, Lan X, Zhang J, Zhang B, Zhang F, Wang Z, Chen P, Zhong M, Wang G, Zhang Z. Rolling up 2D WSe 2 Nanosheets to 1D Anisotropic Nanoscrolls for Polarization-Sensitive Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2404897. [PMID: 39152939 DOI: 10.1002/smll.202404897] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2024] [Revised: 08/01/2024] [Indexed: 08/19/2024]
Abstract
The intrinsic low-symmetry crystal structures or external geometries of low-dimensional materials are crucial for polarization-sensitive photodetection. However, these inherently anisotropic materials are limited in variety, and their anisotropy is confined to specific crystal directions. Transforming 2D semiconductors, such as WSe2, from isotropic 2D nanosheets into anisotropic 1D nanoscrolls expands their application in polarization photodetection. Despite this considerable potential, research on polarization photodetection based on nanoscrolls remains scarce. Here, the uniform crystalline orientation of WSe2 nanoscrolls is achieved conveniently and efficiently by applying ethanol droplets to vapor deposition-grown bilayer WSe2 nanosheets. Angle-resolved polarized Raman spectroscopy of WSe2 nanoscrolls demonstrates vibrational anisotropy. Photodetectors based on these nanoscrolls show competitive overall performance with a broadband detection range from 405 to 808 nm, a competitive on/off ratio of ≈900, a high detectivity of 3.4 × 108 Jones, and a fast response speed of ≈30 ms. Additionally, WSe2 nanoscroll-based photodetectors exhibit strong polarization-sensitive detection with a maximum dichroic ratio of 1.5. More interestingly, due to high photosensitivity, the WSe2 nanoscroll detectors can easily record sequential puppy images. This work reveals the potential of WSe2 nanoscrolls as excellent polarization-sensitive photodetectors and provides new insights into the development of high-performance optoelectronic devices.
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Affiliation(s)
- Zhikang Ao
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan, 410083, China
- School of Flexible Electronics (Future Technologies), Institute of Advanced Materials, College of Materials Science and Engineering, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing, 211816, China
| | - Chang Liu
- School of Flexible Electronics (Future Technologies), Institute of Advanced Materials, College of Materials Science and Engineering, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing, 211816, China
| | - Huifang Ma
- School of Flexible Electronics (Future Technologies), Institute of Advanced Materials, College of Materials Science and Engineering, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing, 211816, China
| | - Xiang Lan
- School of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Jianhong Zhang
- School of Flexible Electronics (Future Technologies), Institute of Advanced Materials, College of Materials Science and Engineering, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing, 211816, China
| | - Baihui Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan, 410083, China
| | - Fen Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan, 410083, China
| | - Zeran Wang
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan, 410083, China
| | - Peng Chen
- Schoolof Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Mianzeng Zhong
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan, 410083, China
| | - Guang Wang
- Department of Physics, College of Sciences, National University of Defense Technology, Changsha, 410073, China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan, 410083, China
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Magaletti F, Prioglio G, Giese U, Barbera V, Galimberti M. Hexagonal Boron Nitride as Filler for Silica-Based Elastomer Nanocomposites. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 14:30. [PMID: 38202486 PMCID: PMC10780802 DOI: 10.3390/nano14010030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2023] [Revised: 12/07/2023] [Accepted: 12/15/2023] [Indexed: 01/12/2024]
Abstract
Two-dimensional hexagonal boron nitride (hBN) has attracted tremendous attention over the last few years, thanks to its stable structure and its outstanding properties, such as mechanical strength, thermal conductivity, electrical insulation, and lubricant behavior. This work demonstrates that hBN can also improve the rheological and mechanical properties of elastomer composites when used to partially replace silica. In this work, commercially available pristine hBN (hBN-p) was exfoliated and ball-mill treated in air for different durations (2.5, 5, and 10 h milling). Functionalization occurred with the -NH and -OH groups (hBN-OH). The functional groups were detected using Fourier-Transform Infrared pectroscopy (FT-IR) and were estimated to be up to about 7% through thermogravimetric analysis. The presence of an increased amount of oxygen in hBN-OH was confirmed using Scanning Electron Microscopy coupled with Energy-Dispersive X-ray Spectroscopy. (SEM-EDS). The number of stacked layers, estimated using WAXD analysis, decreased to 8-9 in hBN-OH (10 h milling) from about 130 in hBN-p. High-resolution transmission electron microscopy (HR-TEM) and SEM-EDS revealed the increase in disorder in hBN-OH. hBN-p and hBN-OH were used to partially replace silica by 15% and 30%, respectively, by volume, in elastomer composites based on poly(styrene-co-butadiene) from solution anionic polymerization (S-SBR) and poly(1,4-cis-isoprene) from Hevea Brasiliensis (natural rubber, NR) as the elastomers (volume (mm3) of composites released by the instrument). The use of both hBNs in substitution of 30% of silica led to a lower Payne effect, a higher dynamic rigidity, and an increase in E' of up to about 15% at 70 °C, with similar/lower hysteresis. Indeed, the composites with hBN-OH revealed a better balance of tan delta (higher at low temperatures and lower at high temperatures) and better ultimate properties. The functional groups reasonably promote the interaction of hBN with silica and with the silica's coupling agent, sulfur-based silane, and thus promoted the interaction with the elastomer chains. The volume of the composite, measured using a high-pressure capillary viscometer, increased by about 500% and 400% after one week of storage in the presence of hBN-p and hBN-OH. Hence, both hBNs improved the processability and the shelf life of the composites. Composites obtained using hBN-OH had even filler dispersion without the detachments of the filler from the elastomer matrix, as shown through TEM micrographs. These results pave the way for substantial improvements in the important properties of silica-based composites for tire compounds, used to reduce rolling resistance and thus the improve environmental impacts.
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Affiliation(s)
- Federica Magaletti
- Department of Chemistry, Materials and Chemical Engineering “G. Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano, Italy; (F.M.); (G.P.)
| | - Gea Prioglio
- Department of Chemistry, Materials and Chemical Engineering “G. Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano, Italy; (F.M.); (G.P.)
| | - Ulrich Giese
- Deutsches Institut für Kautschuktechnologie e. V., Eupener Straße 33, 30519 Hannover, Germany
| | - Vincenzina Barbera
- Department of Chemistry, Materials and Chemical Engineering “G. Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano, Italy; (F.M.); (G.P.)
| | - Maurizio Galimberti
- Department of Chemistry, Materials and Chemical Engineering “G. Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano, Italy; (F.M.); (G.P.)
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Wang H, Linghu J, Wang X, Zhao Q, Shen H. Angular-Dependent THz Modulator with Hybrid Metal-Graphene Metastructures. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1914. [PMID: 37446430 DOI: 10.3390/nano13131914] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2023] [Revised: 06/13/2023] [Accepted: 06/21/2023] [Indexed: 07/15/2023]
Abstract
The coupling effects of surface plasmon resonance (SPR) from metamaterials induce variation in both the frequency and intensity of plasmonic modes. Here, we report an angular-dependent THz modulator with hybrid metal-graphene metastructures. The metastructures composed of the period gold split-rod arrays on top of a monolayer graphene, which show redshift modulation in the THz region with an increasing incident angle due to the strong out-of-plane magnetic flux introduced by the clockwise circular current at the oblique incidence. By utilizing graphene-based actively tunable conductor with ion-gel electrical gating, the THz transmission can be significantly modified. The modulation depth of the hybrid metal-graphene metastructure modulator can reach ~37.6% at 0.62 THz with a gate voltage of -3 V. The theoretical modeling of transmitted dependency on frequency and incident angle is demonstrated at different Fermi energies, which fits well with the experimental results. This hybrid device can offer a useful method for THz applications (such as angle sensors or angular-resolved spectroscopy), where angle-dependent modulation is needed.
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Affiliation(s)
- Huan Wang
- School of Science, Chang'an University, Xi'an 710061, China
| | - Jiajun Linghu
- School of Science, Chang'an University, Xi'an 710061, China
| | - Xuezhi Wang
- School of Science, Chang'an University, Xi'an 710061, China
| | - Qiyi Zhao
- School of Science, Xi'an University of Posts & Telecommunications, Xi'an 710121, China
| | - Hao Shen
- School of Science, Chang'an University, Xi'an 710061, China
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