Analyses of All Small Molecule-Based Pentacene/C60 Organic Photodiodes Using Vacuum Evaporation Method

Nonadiabatic molecular dynamics with subsystem density functional theory: application to crystalline pentacene

In this work, we report the development and assessment of the nonadiabatic molecular dynamics approach with the electronic structure calculations based on the linearly scaling subsystem density functional method. The approach is implemented in an open-source embedded Quantum Espresso/Libra software specially designed for nonadiabatic dynamics simulations in extended systems. As proof of the applicability of this method to large condensed-matter systems, we examine the dynamics of nonradiative relaxation of excess excitation energy in pentacene crystals with the simulation supercells containing more than 600 atoms. We find that increased structural disorder observed in larger supercell models induces larger nonadiabatic couplings of electronic states and accelerates the relaxation dynamics of excited states. We conduct a comparative analysis of several quantum-classical trajectory surface hopping schemes, including two new methods proposed in this work (revised decoherence-induced surface hopping and instantaneous decoherence at frustrated hops). Most of the tested schemes suggest fast energy relaxation occurring with the timescales in the 0.7-2.0 ps range, but they significantly overestimate the ground state recovery rates. Only the modified simplified decay of mixing approach yields a notably slower relaxation timescales of 8-14 ps, with a significantly inhibited ground state recovery.

Split-Gate: Harnessing Gate Modulation Power in Thin-Film Electronics

With the increase in electronic devices across various applications, there is rising demand for selective carrier control. The split-gate consists of a gate electrode divided into multiple parts, allowing for the independent biasing of electric fields within the device. This configuration enables the potential formation of both p- and n-channels by injecting holes and electrons owing to the presence of the two gate electrodes. Applying voltage to the split-gate allows for the control of the Fermi level and, consequently, the barrier height in the device. This facilitates band bending in unipolar transistors and allows ambipolar transistors to operate as if unipolar. Moreover, the split-gate serves as a revolutionary tool to modulate the contact resistance by controlling the barrier height. This approach enables the precise control of the device by biasing the partial electric field without limitations on materials, making it adaptable for various applications, as reported in various types of research. However, the gap length between gates can affect the injection of the electric field for the precise control of carriers. Hence, the design of the gap length is a critical element for the split-gate structure. The primary investigation in this review is the introduction of split-gate technology applied in various applications by using diverse materials, the methods for forming the split-gate in each device, and the operational mechanisms under applied voltage conditions.